Hardmask composition, hardmask layer, and method of forming patterns
US-2024377746-A1 · Nov 14, 2024 · US
Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition
US8927201B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8927201-B2 |
| Application number | US-201314038861-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 27, 2013 |
| Priority date | Mar 30, 2011 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Abstract
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A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.
First claim
Opening claim text (preview).
The invention claimed is: 1. A multilayer resist process pattern-forming method comprising: providing an inorganic film over a substrate, the inorganic film being provided using a composition comprising: a compound comprising a metal compound that comprises a hydrolyzable group, a hydrolysate of a metal compound that comprises a hydrolyzable group, a hydrolysis-condensation product of a metal compound that comprises a hydrolyzable group, or a combination thereof, the compound com…
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Physics · mapped topic
- G03F7/11Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US8927201B2 cover?
- A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an orga…
- Who is the assignee on this patent?
- Jsr Corp
- What technology area does this patent fall under?
- Primary CPC classification G03F7/11. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).