Sic epitaxial wafer production method
US-2015354090-A1 · Dec 10, 2015 · US
Method of producing a group III nitride crystal
US8926752B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8926752-B2 |
| Application number | US-52668508-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 27, 2008 |
| Priority date | Mar 2, 2007 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE. To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of producing a group III nitride crystal by vapor-phase growth, comprising the step of growing a group III nitride crystal on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and ammonia, wherein the above step comprises an initial growing substep in which a group III nitride crystal layer is grown by vapor-phase growth on the single crystal substrate heated at a…
Assignees
Inventors
Classifications
- C30B25/10Primary
Chemistry & Metallurgy · mapped topic
- C30B29/403Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8926752B2 cover?
- There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE. To produce a group III nitride crystal by HVPE comprising the step of growing a gr…
- Who is the assignee on this patent?
- Koukitu Akinori, Kumagai Yoshinao, Nagashima Toru, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification C30B25/10. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).