Microfluidic system with single drive signal for multiple nozzles
US-2015367373-A1 · Dec 24, 2015 · US
Microfluidic nozzle formation and process flow
US8925835B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8925835-B2 |
| Application number | US-42269009-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 13, 2009 |
| Priority date | Dec 31, 2008 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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- Title
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Abstract
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A method that includes forming a chamber in a substrate, forming a silicon layer overlying the chamber, etching the silicon layer to remove selected regions and retain a selected portion overlying the chamber, the selected portion being at a location and having dimensions that correspond to a location and to dimensions of a nozzle, and forming a first metal layer adjacent to the selected portion. The method also includes forming a path in the substrate to expose the chamber concurrently with removing the selected portion of the silicon layer to expose the nozzle, the nozzle being in fluid communication with the path, the chamber, and a surrounding environment.
First claim
Opening claim text (preview).
The invention claimed is: 1. A device, comprising: a substrate; a first dielectric layer on the substrate; a chamber having a first surface and a second surface defined by the first dielectric layer, the second surface being opposite to the first surface; a first heater element positioned in the first dielectric layer and configured to heat the chamber from the second surface; a metal layer overlying the first dielectric layer, the metal layer having a first thickness, the…
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Cross-Sectional Technologies · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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Frequently asked questions
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- What does patent US8925835B2 cover?
- A method that includes forming a chamber in a substrate, forming a silicon layer overlying the chamber, etching the silicon layer to remove selected regions and retain a selected portion overlying the chamber, the selected portion being at a location and having dimensions that correspond to a location and to dimensions of a nozzle, and forming a first metal layer adjacent to the selected portio…
- Who is the assignee on this patent?
- Fang Ming, Wang Fuchao, St Microelectronics Inc
- What technology area does this patent fall under?
- Primary CPC classification B41J2/1601. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).