Fixed layer of magnetic tunnel junction, magnetic memory chip, and method for manufacturing magnetic tunnel junction

Patent metadata

Field	Value
Publication number	US-2026090278-A1
Application number	US-202418952971-A
Country	US
Kind code	A1
Filing date	Nov 19, 2024
Priority date	May 17, 2024
Publication date	Mar 26, 2026
Grant date	—

Abstract

The present disclosure relates to a fixed layer of a magnetic tunnel junction, a magnetic storage chip, and a method for manufacturing the magnetic tunnel junction, and particularly provides a new MTJ device structure and a method for manufacturing the same. Specifically, fixed layers are prepared on both sides of a free layer of a conventional MTJ, i.e., forming a double-fixed-layer structure. The double-fixed-layer MTJ is made of ferromagnetic materials with high spin polarization rates that are subject to certain magnetization treatment, have a certain difference in coercivity strength and have opposite spin directions. The structure can realize for the first time that information writing energy can be reduced when spins of the fixed layers and the free layer of the MTJ change from parallel state to antiparallel state and from antiparallel state to parallel state.

First claim

1 . A magnetic tunnel junction for a magnetic memory chip, comprising: a free layer ferromagnetic film structure having a spin direction changing in an information storage process for information write, a first magnesium oxide film and a second magnesium oxide film disposed on both sides of the free layer ferromagnetic film structure, a first fixed layer ferromagnetic film structure disposed on the other side of the first magnesium oxide film and having a spin direction unchanged in the information storage process, and a second fixed layer ferromagnetic film structure disposed on the other side of the second magnesium oxide film and having a spin direction unchanged in the information storage process, wherein spin polarization rates of the first fixed layer ferromagnetic film structure and the second fixed layer ferromagnetic film structure are greater than 0.4; spins of the first fixed layer ferromagnetic film structure, the second fixed layer ferromagnetic film structure and the free layer ferromagnetic film structure are perpendicular to planes where the films are located; and coercivity of the first fixed layer ferromagnetic film structure is greater than that of the second fixed layer ferromagnetic film structure, and the coercivity of the second fixed layer ferromagnetic film structure is greater than that of the free layer ferromagnetic film structure.

2 . The magnetic tunnel junction for a magnetic memory chip according to claim 1 , wherein the first fixed layer ferromagnetic film structure and the second fixed layer ferromagnetic film structure are each a ferromagnetic film made of at least one of Co, Fe, Fe—Co alloy, Fe—Co—B alloy, Co—Mn—X (X═Si, Al) alloy, Co—Fe—X (X═Al, Si) alloy, Co—Cr—X (X═Al, Si) alloy, Co—Cr—Fe—Al alloy, Co—Mn—Al—Si alloy, Co—Mn—Fe—Si alloy, Co—Fe—Al—Si alloy, Co—Cr—V—Al alloy, or Co—V—Fe—Al alloy.

3 . The magnetic tunnel junction for a magnetic memory chip according to claim 2 , wherein when the spin directions of the first fixed layer ferromagnetic film structure, the second fixed layer ferromagnetic film structure and the free layer ferromagnetic film structure are all parallel, a resistance is R A ; when the spin directions of the first fixed layer ferromagnetic film structure and the second fixed layer ferromagnetic film structure are parallel, and the spin directions of the second fixed layer ferromagnetic film structure and the free layer ferromagnetic film structure are antiparallel, a resistance is R B ; when the spin directions of the first fixed layer ferromagnetic film structure and the second fixed layer ferromagnetic film structure are antiparallel, and the spin directions of the second fixed layer ferromagnetic film structure and the free layer ferromagnetic film structure are parallel, a resistance is R C ; and when a result of R A , R B and R C calculated by (2R C −R B −R A )/(R A +R B −R C ) is defined as a magnetoresistance (MR) ratio, an MR value is greater than 80%.

4 . A method for manufacturing the magnetic tunnel junction for a magnetic memory chip according to any one of the claims 1 to 3 , comprising the following characteristic steps:
(1) preparing, on a base plate, a substrate necessary for a storage device, preparing the first fixed layer ferromagnetic film structure, the first magnesium oxide film, the free layer ferromagnetic film structure, the second magnesium oxide film and the second fixed layer ferromagnetic film structure successively from bottom to top, and then preparing a covering layer of the storage device; (2) forming the device with specified patterns; and (3) after the device is completed, first applying a magnetic field that is perpendicular to a device film surface and greater than coercivity H c_Btm of the first fixed layer ferromagnetic film structure, then gradually reducing the magnetic field to a zero magnetic field, increasing the magnetic field reversely to be greater than coercivity H c_Top of the second fixed layer ferromagnetic film structure but smaller than the coercivity H c_Btm of the first fixed layer ferromagnetic film structure, retaining for 1 minute, and removing the applied magnetic field.

Assignees

• Yangtze Delta Graduate School Of Bbeijing Institute Of Tech Jiaxing
• Beijing Institute Tech
• Yangtze Delta Graduate School Of Beijing Institute Of Tech Jiaxing

Inventors

• Ye Shujun
• Nishioka Koichi

Classifications

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H10N50/01

  Manufacture or treatment · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title