Transition metal containing contact with reduced contact resistivity

Patent metadata

Field	Value
Publication number	US-2026052752-A1
Application number	US-202418807152-A
Country	US
Kind code	A1
Filing date	Aug 16, 2024
Priority date	Aug 16, 2024
Publication date	Feb 19, 2026
Grant date	—

Abstract

The present technology includes semiconductor devices and methods with improved contact resistivity. Semiconductor devices include a substrate base, a silicon oxide disposed on the base defining one or more features, a non-magnetic transition-metal doped contact silicide layer disposed on the substrate in the one or more features, and at least a first metal layer. The non-magnetic transition-metal doped contact silicide layer includes a non-magnetic transition-metal, a first metal, and a silicon containing compound, and includes greater than or about 8.0 E+13 per cm 2 non-magnetic transition-metal atoms. The first metal layer includes the first metal and overlies the non-magnetic transition-metal doped contact silicide layer.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a substrate, an oxide disposed on the substrate defining one or more features; and a silicide contact disposed on the substrate in the one or more features, the silicide contact comprising:
a non-magnetic transition-metal, and
at least a first metal.

2 . The semiconductor device of claim 1 , wherein the contact exhibits a Schottky Barrier Height that is at least about 5% less than a Schottky Barrier Height in a semiconductor device that does not contain a non-magnetic transition-metal in the silicide contact.

3 . The semiconductor device of claim 1 , wherein the contact exhibits a Schottky Barrier Height of less than 1.0 eV.

4 . The semiconductor device of claim 1 , wherein the silicide comprises a concentration of the non-magnetic transition-metal of greater than or about 8 E+13 per cm 2 .

5 . The semiconductor device of claim 4 , wherein the non-magnetic transition-metal comprises yttrium, scandium, zirconium, or a combination thereof.

6 . The semiconductor device of claim 1 , wherein the first metal comprises titanium, zirconium, nickel, molybdenum, gold, tungsten, palladium, platinum, chromium, or a combination thereof.

7 . The semiconductor device of claim 6 , wherein the non-magnetic transition-metal is yttrium, and the first metal is titanium.

8 . The semiconductor device of claim 4 , wherein the silicide contact comprises a concentration of the non-magnetic transition-metal of greater than or about 1 E+14 per cm 2 .

9 . The semiconductor device of claim 1 , wherein the non-magnetic transition-metal is disposed in a n-MOS region.

10 . The semiconductor device of claim 1 , wherein non-magnetic transition-metal is disposed in a p-MOS region.

11 . A semiconductor device, comprising:
a silicon-containing substrate; a silicon oxide disposed on the substrate defining one or more features; and a silicide contact disposed on the substrate in the one or more features, the silicide contact comprising:
a non-magnetic transition-metal, and
at least a first metal.

12 . The semiconductor device of claim 11 , wherein the first metal is molybdenum, titanium, zirconium, nickel, or a combination thereof.

13 . The semiconductor device of claim 12 , wherein the non-magnetic transition-metal is zirconium, yttrium, scandium, or a combination thereof.

14 . A method of forming a semiconductor device, comprising:
depositing a non-magnetic transition-metal layer comprising a non-magnetic transition-metal over a silicon containing substrate in at least a first feature; depositing a first metal layer comprising a first metal over the non-magnetic transition-metal layer; and annealing the semiconductor device, forming a silicide contact positioned between the first metal layer and the silicon containing substrate, the silicide contact comprising the first metal and the non-magnetic transition-metal.

15 . The method of claim 14 , wherein depositing the non-magnetic transition-metal layer includes exposing the silicon containing substrate in the at least the first feature to a non-magnetic transition-metal precursor.

16 . The method of claim 15 , wherein depositing the first metal layer includes exposing the non-magnetic transition-metal layer to a first metal precursor.

17 . The method of claim 16 , wherein the non-magnetic transition-metal comprises yttrium, zirconium, scandium, or a combination thereof.

18 . The method of claim 14 , wherein the contact exhibits a Schottky Barrier Height that is at least about 5% less than a Schottky Barrier Height in a contact that does not contain a non-magnetic transition-metal.

19 . The method of claim 14 , wherein the silicide contact comprises a non-magnetic transition-metal concentration of greater than or about 8 E+13 per cm 2 .

20 . The method of claim 14 , wherein the silicide contact comprises a concentration of the non-magnetic transition-metal of greater than or about 1 E+14 per cm 2 .

Assignees

• Applied Materials Inc

Inventors

• Dag Sefa
• Yang Ning
• Bazizi El Mehdi
• Pal Ashish
• Gelatos Avgerinos V
• Chen Zhebo
• Jansen Alexander
• Shen Gang

Classifications

• H10D62/83

  being Group IV materials, e.g. B-doped Si or undoped Ge · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title

• H10W20/066 Primary

  by forming silicides of refractory metals · CPC title

• H10D64/0122

  to diamond, semiconducting diamond-like carbon or graphene · CPC title

• H10D64/647

  Schottky drain or source electrodes for IGFETs · CPC title