Hole-Transport Layer Material, Electron-Blocking Layer Material, Electron-Transport Layer Material, Hole-Blocking Layer Material, Light-Emitting Device, Light-Emitting Apparatus, Electronic Device, And Lighting Device

Patent metadata

Field	Value
Publication number	US-2026040760-A1
Application number	US-202519305834-A
Country	US
Kind code	A1
Filing date	Aug 21, 2025
Priority date	May 13, 2021
Publication date	Feb 5, 2026
Grant date	—

Abstract

An organic semiconductor device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-transport layer and a light-emitting layer. The hole-transport layer is positioned between the anode and the light-emitting layer. The hole-transport layer is not in contact with the anode. The hole-transport layer includes a transport layer material for a light-emitting device and the GSP_slope that is a potential gradient of a surface potential of an evaporated film of the material is higher than or equal to 20 (mV/nm).

First claim

1 . (canceled)

2 . A light-emitting device comprising:
an anode; a cathode; a light-emitting layer between the anode and the cathode; a first layer between the anode and the light-emitting layer; and a second layer between the first layer and the light-emitting layer, wherein the second layer is in contact with the light-emitting layer, wherein the first layer comprises a first material, wherein the second layer comprises a second material, wherein the second material comprises a fluorene skeleton, and wherein a GSP_slope that is a potential gradient of a surface potential of an evaporated film of the first material is lower than a GSP_slope that is a potential gradient of a surface potential of an evaporated film of the second material.

3 . A light-emitting device comprising:
an anode; a cathode; a light-emitting layer between the anode and the cathode; and a first layer between the anode and the light-emitting layer, wherein the first layer comprises a first material, wherein the first material comprises a fluorene skeleton, and wherein a GSP_slope that is a potential gradient of a surface potential of an evaporated film of the first material is higher than or equal to 20 mV/nm.

4 . A light-emitting device comprising:
an anode; a cathode; a light-emitting layer between the anode and the cathode; a first layer between the anode and the light-emitting layer; and a second layer between the light-emitting layer and the cathode, wherein the first layer comprises a first material, wherein the second layer comprises a second material, wherein the first material comprises a fluorene skeleton, wherein a GSP_slope that is a potential gradient of a surface potential of an evaporated film of the first material is higher than or equal to 20 mV/nm, and wherein a GSP_slope that is a potential gradient of a surface potential of an evaporated film of the second material is higher than or equal to 20 mV/nm.

5 . The light-emitting device according to claim 2 , wherein the GSP_slope is higher than or equal to 20 mV/nm.

6 . The light-emitting device according to claim 5 , wherein the GSP_slope is lower than or equal to 100 mV/nm.

7 . The light-emitting device according to claim 3 , wherein the GSP_slope of the first material is lower than or equal to 100 mV/nm.

8 . The light-emitting device according to claim 4 ,
wherein the GSP_slope of the first material is lower than or equal to 100 mV/nm, and wherein the GSP_slope of the second material is lower than or equal to 100 mV/nm.

9 . The light-emitting device according to claim 3 , wherein the first layer is in contact with the light-emitting layer.

10 . The light-emitting device according to claim 4 ,
wherein the first layer is in contact with the light-emitting layer, and wherein the second layer is in contact with the light-emitting layer.

11 . The light-emitting device according to claim 2 ,
wherein an ordinary ray refractive index of the second material with respect to light with a wavelength of 450 nm is higher than or equal to 1.50 and lower than or equal to 1.75.

12 . The light-emitting device according to claim 3 ,
wherein an ordinary ray refractive index of the first material with respect to light with a wavelength of 450 nm is higher than or equal to 1.50 and lower than or equal to 1.75.

13 . The light-emitting device according to claim 4 ,
wherein an ordinary ray refractive index of the first material with respect to light with a wavelength of 450 nm is higher than or equal to 1.50 and lower than or equal to 1.75.

14 . The light-emitting device according to claim 2 ,
wherein an ordinary ray refractive index of the second material with respect to light with a wavelength of 633 nm is higher than or equal to 1.45 and lower than or equal to 1.70.

15 . The light-emitting device according to claim 3 ,
wherein an ordinary ray refractive index of the first material with respect to light with a wavelength of 633 nm is higher than or equal to 1.45 and lower than or equal to 1.70.

16 . The light-emitting device according to claim 4 ,
wherein an ordinary ray refractive index of the first material with respect to light with a wavelength of 633 nm is higher than or equal to 1.45 and lower than or equal to 1.70.

17 . The light-emitting device according to claim 2 ,
wherein the second material comprises an alkyl group having 2 to 5 carbon atoms.

18 . The light-emitting device according to claim 3 ,
wherein the first material comprises an alkyl group having 2 to 5 carbon atoms.

19 . The light-emitting device according to claim 4 ,
wherein the first material comprises an alkyl group having 2 to 5 carbon atoms.

20 . The light-emitting device according to claim 2 ,
wherein the second material is arylamine.

21 . The light-emitting device according to claim 3 , wherein the first layer is not in contact with the anode.

Assignees

• Semiconductor Energy Lab

Inventors

• Watabe Takeyoshi
• Seo Hiromi
• Ueda Airi
• Kawano Yuta
• Kubota Tomohiro
• Kitano Yasushi
• Tosu Takao
• Ohsawa Nobuharu
• Seo Satoshi

Classifications

• H10K2101/00

  Properties of the organic materials covered by group H10K85/00 · CPC title

• H10K39/30

  Devices controlled by radiation · CPC title

• H10K50/181

  Electron blocking layers · CPC title

• H10K50/18

  Carrier blocking layers · CPC title

• H10K30/353

  comprising blocking layers, e.g. exciton blocking layers · CPC title