Capacitor, electronic device including the same, and method of preparing the same

Patent metadata

Field	Value
Publication number	US-2026020223-A1
Application number	US-202519018410-A
Country	US
Kind code	A1
Filing date	Jan 13, 2025
Priority date	Jul 10, 2024
Publication date	Jan 15, 2026
Grant date	—

Abstract

Provided are a capacitor, an electronic device including the same, and a method of preparing a capacitor, the capacitor including a first electrode, a second electrode opposing the first electrode, and a dielectric layer between the first and second electrodes, wherein the dielectric layer includes an insertion layer disposed within the dielectric layer, the insertion layer including an impurity and an aluminum oxide, and the impurity including a nonmetal element belonging to Group 1 or Group 17 in the Periodic Table of the Elements, wherein a content of the impurity may be greater than 0 at % and less than 1 at %, as a ratio of the number of atoms of the impurity to the total number of atoms of the impurity and metal within the insertion layer.

First claim

What is claimed is:

1 . A capacitor comprising:
a first electrode; a second electrode opposing the first electrode; and a dielectric layer between the first electrode and the second electrode the dielectric layer including an insertion layer in the dielectric layer such that the insertion layer is spaced apart from the first and second electrodes, wherein the insertion layer includes an impurity and an aluminum oxide, wherein the impurity includes a nonmetal element belonging to Group 1 or Group 17 in the Periodic Table of the Elements, and wherein a content of the impurity is greater than 0 atomic percent (at %) and less than 1 at %, as a ratio of atoms of the impurity to a total number of atoms of the impurity and metals within the insertion layer.

2 . The capacitor of claim 1 ,
wherein the impurity includes at least one of hydrogen, fluorine, chlorine, or bromine.

3 . The capacitor of claim 1 ,
wherein the aluminum oxide includes Al a O b , wherein 1.0≤a≤3.0 and 2.0≤b≤4.0.

4 . The capacitor of claim 3 ,
wherein the insertion layer further includes a dielectric material, wherein the dielectric material includes a first metal oxide, wherein the first metal oxide includes an oxide of at least one of titanium (Ti), hafnium (Hf), zirconium (Zr), silicon (Si), lanthanum (La), gadolinium (Gd), strontium (Sr), yttrium (Y), niobium (Nb), tantalum (Ta), chromium (Cr), copper (Cu), iron (Fe), magnesium (Mg), nickel (Ni), scandium (Sc), germanium (Ge), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu).

5 . The capacitor of claim 4 ,
wherein the first metal oxide includes M c O d , wherein 1.0≤c≤3.0 and 2.0≤d≤5.0, wherein M includes at least one of titanium (Ti), hafnium (Hf), zirconium (Zr), silicon (Si), lanthanum (La), gadolinium (Gd), strontium (Sr), yttrium (Y), niobium (Nb), tantalum (Ta), chromium (Cr), copper (Cu), iron (Fe), magnesium (Mg), nickel (Ni), scandium (Sc), or germanium (Ge).

6 . The capacitor of claim 4 , wherein the first metal oxide includes at least one of ZrO 2 , HfO 2 , Zr x Hf y O 2 (0<x<1, 0<y<1), TiO 2 , SiO 2 , La 2 O 3 , GdO 2 , SrO 2 , Y 2 O 3 , La 2 O 3 , Nb 2 O 5 , Ta 2 O 5 , Cr 2 O 3 , CuO, Fe 2 O 3 , MgO, Nb 2 O 5 , NiO, Ta 2 O 5 , Sc 2 O 3 , CeO 2 , PrO x (1≤x≤5), Nd 2 O 3 , Sm 2 O 3 , EuO y (1≤y≤5), Gd 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 , Yb 2 O 3 , or Lu 2 O 3 .

7 . The capacitor of claim 4 ,
wherein the insertion layer includes the aluminum oxide and the first metal oxide, wherein a content of the first metal of the first metal oxide is higher than a content of the aluminum of the aluminum oxide in the insertion layer.

8 . The capacitor of claim 7 ,
wherein the content of the aluminum is 10 at % or less, as a ratio of atoms of the aluminum to the total number of atoms of the impurity and metals within the insertion layer.

9 . The capacitor of claim 1 ,
wherein the insertion layer includes Al a M b O 3 , wherein 0<a<1 and 0<b<2, wherein M is a metal belonging to Groups 2 to 12 in the Periodic Table of the Elements, and a ratio of aluminum (a) to M (b) in the insertion layer satisfies 0<a/b≤0.1.

10 . The capacitor of claim 1 ,
wherein the insertion layer includes at least one of Al c Zr d O 3 , Al c Hf d O 3 , Al c Zr d Hf e O 3 , Al c Ti d O 3 Al c Zr d Ti e O 3 , Al c Hf d Ti e O 3 , wherein 0<c<1, 0<d<2, and 0<e<2.

11 . The capacitor of claim 1 , wherein the dielectric layer further includes
a first dielectric material layer adjacent to the first electrode; and a second dielectric material layer adjacent to the second electrode, wherein the insertion layer is between the first dielectric material layer and the second dielectric material layer, wherein the insertion layer further includes a dielectric material, wherein the dielectric material, the first dielectric material layer, and the second dielectric material layer share a same first metal oxide.

12 . The capacitor of claim 11 ,
wherein a content of the aluminum within the insertion layer is higher than a content of the aluminum at a boundary region between the first dielectric material layer and the insertion layer, and wherein the content of the aluminum within the insertion layer is higher than a content of the aluminum at a boundary region between the second dielectric material layer and the insertion layer.

13 . The capacitor of claim 1 ,
wherein the dielectric layer comprises a crystalline dielectric material, and wherein a thickness of the dielectric layer is 10 nanometers (nm)) or less, and a thickness of the insertion layer is 5 nm or less.

14 . The capacitor of claim 1 ,
wherein the first electrode and the second electrode each independently include at least one conductive material including at least one of titanium (Ti), nickel (Ni), aluminum (Al), tantalum (Ta), tungsten (W), platinum (Pt), palladium (Pd), gold (Au), iridium (Ir), rhodium (Rh), molybdenum (Mo), vanadium (V), niobium (Nb), ruthenium (Ru), cobalt (Co), a conductive metal oxide, or a conductive metal nitride.

15 . An electronic device comprising:
a transistor; and a capacitor electrically connected to the transistor, wherein the capacitor comprises
a first electrode,
a second electrode opposing the first electrode, and
a dielectric layer between the first electrode and the second electrode, the dielectric layer including an insertion layer in the dielectric layer such that the insertion layer is spaced apart from the first and second electrodes,
wherein the insertion layer includes an impurity, wherein the impurity includes a nonmetal element belonging to Group 1 or Group 17 in the Periodic Table of the Elements, and wherein a content of the impurity is greater than 0 atomic percent (at %) and less than 1 at %, as a ratio of atoms of the impurity to a total number of atoms of the impurity and metal within the insertion layer.

16 . A method of preparing a capacitor, the method comprising:
providing a crystallized first dielectric material layer, a surface of the first dielectric material layer including a plurality of grains and grain boundaries therebetween; selectively adsorbing an impurity onto the grain boundaries; selectively adsorbing a first metal-containing inhibitor onto the plurality of grains; selectively introducing an aluminum oxide onto the grain boundaries; forming an insertion layer by oxidizing the first metal-containing inhibitor; and providing a second dielectric material layer on the insertion layer, wherein the impurity includes a nonmetal element belonging to Group 1 or Group 17 in the Periodic Table of the Elements.

17 . The method of claim 16 ,
wherein the impurity includes at least one of hydrogen, fluorine, chlorine, or bromine.

18 . The method of claim 16 ,
wherein the selectively introducing the aluminum oxide onto the grain boundaries includes atomic layer deposition (ALD), and wherein the ALD is performed for one or more cycles.

19 . The method of claim 18 ,
wherein the selectively introducing the aluminum oxide onto the grain boundaries includes selectively introducing an aluminum precursor onto the grain boundaries; and oxidizing the aluminum precursor.

20 . The method of claim 16 ,
wherein the forming the insertion layer results in the insertion layer including an aluminum oxide and a first metal oxide, wherein the first metal oxide includes at least one f

Assignees

• Samsung Electronics Co Ltd
• Univ Ajou Ind Academic Coop Found

Inventors

• Kim Donghyun
• Oh Ilkwon
• Kim Sunghyun
• Song Jeonggyu
• Lee Jooho
• Won Byoungjun
• Rhee Minjeong
• Lim Youngjin

Classifications

• H10B12/033

  the capacitor extending over the transistor · CPC title

• H10B12/315 Primary

  with the capacitor higher than a bit line · CPC title