Substrate processing method, and substrate manufacturing method

Patent metadata

Field	Value
Publication number	US-2026018421-A1
Application number	US-202318869223-A
Country	US
Kind code	A1
Filing date	May 31, 2023
Priority date	Jun 2, 2022
Publication date	Jan 15, 2026
Grant date	—

Abstract

A substrate processing method according to the present invention incudes: a preparation step of preparing a substrate in which at least a first surface containing silicon oxide and a second surface containing silicon or a silicon compound other than silicon oxide are exposed; a surface modification step of forming an etching selectivity imparting film on at least a part of the first surface and at least a part of the second surface by a silylation treatment of bringing a silylating agent into contact with the first surface and the second surface; and an etching step of selectively carrying out an etching treatment on the second surface with respect to the first surface using an etching agent after the surface modification step.

First claim

1 . A substrate processing method comprising:
a preparation step of preparing a substrate in which at least a first surface containing silicon oxide and a second surface containing silicon or a silicon compound other than silicon oxide are exposed; a surface modification step of forming an etching selectivity imparting film on at least a part of the first surface and at least a part of the second surface by a silylation treatment of bringing a silylating agent into contact with the first surface and the second surface; and an etching step of selectively carrying out an etching treatment on the second surface with respect to the first surface using an etching agent after the surface modification step.

2 . The substrate processing method according to claim 1 ,
wherein the surface modification step such that a pretreatment is carried out before the silylation treatment, and wherein the pretreatment includes a treatment of increasing a difference between a first water contact angle on the etching selectivity imparting film on the first surface and a second water contact angle on the etching selectivity imparting film on the second surface.

3 . The substrate processing method according to claim 1 ,
wherein in the preparation step, the substrate contains a silicon compound having an N element on the second surface, and wherein the etching step is carried out, after the surface modification step, without carrying out an oxidation treatment of bringing an oxidizing agent into contact with the second surface.

4 . The substrate processing method according to claim 1 ,
wherein in the preparation step, the substrate contains, on the second surface, a silicon compound having at least one element selected from the group consisting of an N element, a C element, and a metal element, or contains silicon on the second surface, and wherein the etching step is a step of carrying out, after the surface modification step, an oxidation treatment of bringing an oxidizing agent into contact with the second surface and then carrying out the etching treatment.

5 . The substrate processing method according to claim 1 ,
wherein in the surface modification step, a first water contact angle on the etching selectivity imparting film on the first surface has a value larger than a value of a second water contact angle on the etching selectivity imparting film on the second surface.

6 . The substrate processing method according to claim 5 ,
wherein a difference between the first water contact angle and the second water contact angle is 5° or more.

7 . The substrate processing method according to claim 1 , further comprising:
a cleaning step of subjecting the first surface and the second surface to a cleaning treatment using a cleaning agent, between the surface modification step and the etching step.

8 . The substrate processing method according to claim 7 ,
wherein a liquid temperature of the cleaning agent is 60° C. or lower.

9 . The substrate processing method according to claim 7 ,
wherein the cleaning agent includes an aqueous cleaning solution and/or a rinsing solution.

10 . The substrate processing method according to claim 7 ,
wherein a cycle including at least the surface modification step, the cleaning step, and the etching step in this order is carried out two or more times.

11 . The substrate processing method according to claim 1 , further comprising:
a removal treatment of removing at least a part of the etching selectivity imparting film on the first surface, after the etching step.

12 . The substrate processing method according to claim 1 ,
wherein a cycle including at least the surface modification step and the etching step in this order is carried out two or more times.

13 . The substrate processing method according to claim 1 ,
wherein in the silylation treatment, the etching selectivity imparting film is formed using a silylation composition containing the silylating agent and a catalytic compound.

14 . A substrate manufacturing method comprising:
each step in the substrate processing method according to claim 1 .

Assignees

• Central Glass Co Ltd

Inventors

• Okumura Yuzo
• Terui Yoshiharu

Classifications

• H10P14/6928

  the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6309

  of silicon in uncombined form, i.e. pure silicon · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title