Method for fluorinating hydrogen bis(chlorosulfonyl)imide in gas phase

US2026001761A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2026001761-A1
Application numberUS-202318880525-A
CountryUS
Kind codeA1
Filing dateJun 23, 2023
Priority dateJul 1, 2022
Publication dateJan 1, 2026
Grant date

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  1. Title

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Abstract

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The present invention relates to a method for producing bis(fluorosulfonyl)imide acid, which is economically feasible at industrial scale and which provides a high-purity product.

First claim

Opening claim text (preview).

1 . A method for producing bis(fluorosulfonyl)imide acid (HFSI), said method comprising the step of contacting gaseous bis(chlorosulfonyl)imide acid (HCSI) with gaseous anhydrous hydrogen fluoride (HF), wherein said method is carried out in the absence of solvent. 2 . The method according to claim 1 , wherein gaseous HCSI is obtained from solid or molten HCSI by heating the same to a temperature above HCSI boiling point (TbHCSI) and/or by HCSI reduced pressure vaporization. 3 . The method according to claim 1 , wherein gaseous HCSI is obtained from HCSI in liquid state by a two steps procedure comprising: a) melting solid HCSI to a temperature above its melting temperature (Tm HCSI ); and b) further heating to a temperature above its boiling point (Tb HCSI ). 4 . The method according to claim 1 , wherein gaseous HCSI is loaded into a closed reactor for contacting with gaseous anhydrous HF in admixture with a carrier gas [mixture (M1)]. 5 . The method according to claim 1 , wherein gaseous anhydrous HF is loaded into the closed reactor for contacting with gaseous HCSI in admixture with a carrier gas [mixture (M2)]. 6 . The method according to claim 4 , wherein the carrier gas is nitrogen. 7 . The method according to claim 1 , wherein the molar ratio between HCSI and the anhydrous HF is between 1:1 and 1:3. 8 . The method according to claim 1 , wherein contacting the HCSI and gaseous anhydrous HF is carried out in a closed reactor in the presence of carrier gas deriving from a mixture (M1) and/or from a mixture (M2) and wherein the ratio between HCSI and a total amount of carrier gas in the reactor mixture is between 1:3 and 1:30. 9 . The method according to claim 1 , wherein the step of contacting gaseous HCSI with gaseous anhydrous HF is carried out in a closed reactor at a temperature of from 100 to 300° C. 10 . The method according to claim 1 , wherein the residence time of the HCSI and the anhydrous HF in the closed reactor is between 10 seconds to 3 hours. 11 . A method of making an alkali metal salt, an alkaline-earth metal salt or a quaternary ammonium cation salt of HFSI, said method comprising: (a) producing bis(fluorosulfonyl)imide acid (HFSI) via a method comprising the step of contacting gaseous bis(chlorosulfonyl)imide acid (HCSI) with gaseous anhydrous hydrogen fluoride (HF), wherein said method is carried out in the absence of solvent, and (b) salifying the so obtained HFSI. 12 . The method according to claim 11 , wherein the step of salification of HFSI is carried out with a lithium salt so as to provide lithium bis(fluorosulfonyl)imide (LiFSI). 13 . A bis(fluorosulfonyl)imide acid (HFSI) obtained by the method according to claim 1 . 14 . A lithium bis(fluorosulfonyl)imide (LiFSI) obtained by the method according to claim 11 . 15 . A method comprising incorporating the lithium bis(fluorosulfonyl)imide (LiFSI) according to claim 14 in a non-aqueous electrolyte for batteries. 16 . An electrolyte composition comprising the lithium bis(fluorosulfonyl)imide (LiFSI) according to claim 15 .

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Classifications

  • Organic electrolyte · CPC title

  • characterised by the solutes · CPC title

  • Electric properties · CPC title

  • containing also one or more sulfur atoms · CPC title

  • C01B21/086Primary

    containing one or more sulfur atoms · CPC title

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What does patent US2026001761A1 cover?
The present invention relates to a method for producing bis(fluorosulfonyl)imide acid, which is economically feasible at industrial scale and which provides a high-purity product.
Who is the assignee on this patent?
Specialty Operations France, Centre Nat Rech Scient, Univ Poitiers
What technology area does this patent fall under?
Primary CPC classification H01M10/0568. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Jan 01 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).