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Silicon carbide filler, composite material, and semiconductor device
US2025388475A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025388475-A1 |
| Application number | US-202519204811-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 12, 2025 |
| Priority date | Jun 19, 2024 |
| Publication date | Dec 25, 2025 |
| Grant date | — |
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- Title
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Abstract
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A composite material includes a continuous phase and a silicon carbide filler. The continuous phase is made of a metal or a synthetic resin. The silicon carbide filler is dispersed in the continuous phase and includes dendritic crystals having a circularity in a cross-sectional view of less than 0.206. A semiconductor device includes a semiconductor element and a bonded member formed from the composite material into a plate shape or a layer shape and bonded to the semiconductor element.
First claim
Opening claim text (preview).
What is claimed is: 1 . A silicon carbide filler comprising dendric crystals having a circularity in cross-sectional view of less than 0.206. 2 . The silicon carbide filler according to claim 1 , wherein the dendric crystals have one or more crystal polytypes selected from a group consisting of 3C, 4H, 6H, and 15R. 3 . The silicon carbide filler according to claim 1 , wherein the dendric crystals have a particle size in a range from 10 to 100 μm. 4 . The silicon carbide filler according to claim 1 , wherein an average value of the circularity of the dendric crystals is 0.20 or less. 5 . A composite material comprising: a continuous phase made of a metal or a synthetic resin; and a silicon carbide filler dispersed in the continuous phase and including dendritic crystals having a circularity in a cross-sectional view of less than 0.206. 6 . The composite material according to claim 5 , further comprising an additional filler different from the silicon carbide filler. 7 . The composite material according to claim 6 , wherein the additional filler has a spherical shape. 8 . A semiconductor device comprising: a semiconductor element; and a bonded member formed from a composite material into a plate shape or a layer shape and bonded to the semiconductor element, wherein the composite material includes: a continuous phase made of a metal or a synthetic resin; and a silicon carbide filler dispersed in the continuous phase and including dendritic crystals having a circularity in a cross-sectional view of less than 0.206.
Assignees
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Classifications
having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures (H10W40/254, H10W40/251 take precedence) · CPC title
highly monodisperse size distribution · CPC title
obtained by optical microscopy · CPC title
Micrometer sized, i.e. from 1-100 micrometer · CPC title
by a space-group or by other symmetry indications · CPC title
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- What does patent US2025388475A1 cover?
- A composite material includes a continuous phase and a silicon carbide filler. The continuous phase is made of a metal or a synthetic resin. The silicon carbide filler is dispersed in the continuous phase and includes dendritic crystals having a circularity in a cross-sectional view of less than 0.206. A semiconductor device includes a semiconductor element and a bonded member formed from the c…
- Who is the assignee on this patent?
- Denso Corp, Toyota Motor Co Ltd, MIRISE Technologies Corporation
- What technology area does this patent fall under?
- Primary CPC classification C01B32/956. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Dec 25 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).