Display device, method of manufacturing display device, electronic device comprising display device

Patent metadata

Field	Value
Publication number	US-2025386647-A1
Application number	US-202519092308-A
Country	US
Kind code	A1
Filing date	Mar 27, 2025
Priority date	Jun 17, 2024
Publication date	Dec 18, 2025
Grant date	—

Abstract

A display device including sub-pixel areas including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area includes: light-emitting elements which are disposed on a base layer and include a first light-emitting element in the first sub-pixel area, a second light-emitting element in the second sub-pixel area, and a third light-emitting element in the third sub-pixel area; a first color conversion layer in the first sub-pixel area, a second color conversion layer in the second sub-pixel area, and a scattering layer in the third sub-pixel area, which are disposed on the light-emitting elements; and a bank which is disposed between the sub-pixel areas and includes a substrate material on which semiconductor layers grow.

First claim

What is claimed is:

1 . A display device including sub-pixel areas comprising a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area, the display device comprising:
light-emitting elements which are disposed on a base layer and comprise a first light-emitting element in the first sub-pixel area, a second light-emitting element in the second sub-pixel area, and a third light-emitting element in the third sub-pixel area; a first color conversion layer in the first sub-pixel area, a second color conversion layer in the second sub-pixel area, and a scattering layer in the third sub-pixel area, which are disposed on the light-emitting elements; and a bank which is disposed between the sub-pixel areas and comprises a substrate material on which semiconductor layers grow.

2 . The display device according to claim 1 , wherein the bank comprises at least one of a sapphire material, a silicon (Si) material, gallium arsenide (GaAs), silicon carbide (SiC), and gallium nitride (GaN).

3 . The display device according to claim 1 , wherein at least a portion of each of the first color conversion layer, the second color conversion layer, and the scattering layer is disposed in an accommodating space formed closer to the base layer than the bank.

4 . The display device according to claim 3 , further comprising:
an upper reflective layer disposed on a side surface of the bank; and an upper scattering layer disposed on the upper reflective layer.

5 . The display device according to claim 3 , further comprising:
an intermediate reflective structure which is disposed between the sub-pixel areas and extends longer in a thickness direction of the base layer than the light-emitting elements.

6 . The display device according to claim 5 , wherein the bank is disposed on the intermediate reflective structure.

7 . The display device according to claim 6 , wherein
a portion of the intermediate reflective structure overlaps the light-emitting elements in a direction that the base layer extends, and another portion of the intermediate reflective structure overlaps the first color conversion layer, the second color conversion layer, and the scattering layer in the direction.

8 . The display device according to claim 7 , wherein the intermediate reflective structure comprises an intermediate reflective layer, an intermediate scattering layer on the intermediate reflective layer, and a passivation layer on the intermediate scattering layer.

9 . The display device according to claim 7 , wherein the first light-emitting element, the second light-emitting element, and the third light-emitting element provide light of a same color.

10 . The display device according to claim 1 , further comprising:
a semiconductor wafer comprising the base layer and pixel circuits electrically connected to the light-emitting elements, wherein the semiconductor wafer is a complementary metal oxide semiconductor (CMOS) wafer.

11 . The display device according to claim 10 , wherein
each of the light-emitting elements comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the display device further comprises:
a first conductive member adjacent to a side surface of each of the first semiconductor layer, the second semiconductor layer, and the active layer; and
a second conductive member adjacent to another side surface of the second semiconductor layer.

12 . The display device according to claim 11 , further comprising:
a first conductive portion which is disposed on the semiconductor wafer and is electrically connected to the first conductive member; and a second conductive portion which is disposed on the semiconductor wafer and is electrically connected to the second conductive member.

13 . The display device according to claim 12 , further comprising:
a lower reflective layer which is disposed between the first conductive portion and the second conductive portion below the light-emitting elements; a first color filter in the first sub-pixel area; a second color filter in the second sub-pixel area; and a third color filter in the third sub-pixel area.

14 . A method of manufacturing a display device, the method comprising:
patterning a structure comprising light-emitting elements on a substrate; providing a semiconductor wafer; bonding the semiconductor wafer with the structure; removing at least a portion of the substrate to form a bank; and patterning a color conversion layer in an area surrounded by the bank.

15 . The method according to claim 14 , wherein the patterning of the structure comprises patterning an intermediate reflective structure comprising an intermediate reflective layer between the light-emitting elements on the substrate.

16 . The method according to claim 15 , further comprising:
forming a bank base with a reduced thickness of the substrate by removing at least a portion of the substrate; and patterning the bank by removing at least a portion of the bank base.

17 . The method according to claim 16 , wherein
the patterning of the structure comprises patterning a base un-doped semiconductor layer on the light-emitting elements, and the method further comprises forming an accommodating space by removing at least a portion of the base un-doped semiconductor layer, after the patterning of the bank.

18 . The method according to claim 17 , further comprising:
patterning an upper reflective layer and an upper scattering layer on a side surface of the bank.

19 . The method according to claim 17 , wherein the patterning of the color conversion layer comprises providing at least a portion of the color conversion layer in the accommodating space.

20 . An electronic device, comprising:
a processor that provides input image data; a display device that displays an image based on the input image data; and a power supply that supplies power to the display device, wherein the display device comprises:
a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area;
light-emitting elements which are disposed on a base layer and comprise a first light-emitting element in the first sub-pixel area, a second light-emitting element in the second sub-pixel area, and a third light-emitting element in the third sub-pixel area;
a first color conversion layer in the first sub-pixel area, a second color conversion layer in the second sub-pixel area, and a scattering layer in the third sub-pixel area, which are disposed on the light-emitting elements; and
a bank which is disposed between the sub-pixel areas and comprises a substrate material on which semiconductor layers grow.

Assignees

• Samsung Display Co Ltd

Inventors

• Moon Ji Wook
• Huh Jong Moo
• Kim Min Woo
• Lee Gwang Geun

Classifications

• H10H29/37

  Pixel-defining structures, e.g. banks between the LEDs · CPC title

• H10H29/856

  Reflecting means · CPC title

• H10H29/882

  Scattering means · CPC title

• H10H29/8514 Primary

  characterised by their shape, e.g. plate or foil · CPC title

• H10H20/019

  Removal of at least a part of a substrate on which semiconductor layers have been formed · CPC title