Devices for depositing a coating in a cvd reactor

Patent metadata

Field	Value
Publication number	US-2025382707-A1
Application number	US-202519315026-A
Country	US
Kind code	A1
Filing date	Aug 29, 2025
Priority date	Nov 5, 2019
Publication date	Dec 18, 2025
Grant date	—

Abstract

A coating is deposited on a substrate in a CVD reactor that includes a process chamber and a gas inlet member with a first gas distribution chamber and a second gas distribution chamber separate from the first gas distribution chamber. To deposit heterostructures, in a first step, an inert or a diluent gas is fed into the first gas distribution chamber and a reactive gas containing the elements of a first coating is fed into the second gas distribution chamber. The reactive gas pyrolytically decomposes in the process chamber to form the first coating on the substrate. In a second step, a diluent gas is fed into the second gas distribution chamber and a reactive gas containing the elements of a second coating is fed into the first gas distribution chamber. The reactive gas or gas mixture decomposes in the process chamber to form the second coating on the substrate.

First claim

What is claimed is:

1 . A device for depositing a heterostructure having a first and a second two-dimensional layer on a substrate ( 4 ), the first and second two-dimensional layers being different from one another, the device comprising:
a chemical vapor deposition (CVD) reactor ( 1 ) with a process chamber ( 3 ) and a gas inlet member ( 2 ), wherein the gas inlet member ( 2 ) includes a first gas distribution chamber ( 11 ) and a second gas distribution chamber ( 21 ) separated from the first gas distribution chamber ( 11 ), wherein the first and second gas distribution chambers ( 11 , 21 ) are arranged vertically above one another, and wherein respective gas outlet openings ( 14 ) fluidly coupled to the first gas distribution chamber ( 11 ) and respective gas outlet openings ( 24 ) fluidly coupled to the second gas distribution chamber ( 21 ) are arranged uniformly over an entire gas outlet surface ( 25 ) of the gas inlet member ( 2 ); a first bubbler ( 32 ) configured to deliver a first transition metal compound and a first reactive gas source configured to deliver a first reactive gas comprising a first element of main group VI, wherein the first transition metal compound is capable of reacting with the first reactive gas to form the first two-dimensional layer of a first metal-dichalcogenide on the substrate ( 4 ); a second bubbler ( 32 ′) configured to deliver a second transition metal compound and a second reactive gas source configured to deliver a second reactive gas comprising a second element of main group VI, wherein the second transition metal compound is capable of reacting with the second reactive gas to form the second two-dimensional layer of a second metal-dichalcogenide on the substrate ( 4 ); an inert gas source ( 39 , 39 ′) configured to deliver an inert gas or dilution gas; a first and a second switching apparatus configured to alternately connect the first and the second bubbler ( 32 , 32 ′) with a vent-line ( 35 ) by means of which the first or second transition metal compound is routed past the process chamber ( 3 ) or with a first and second run line ( 34 , 34 ′) respectively, with which the first and second transition metal compound is introduced into the respective first or second gas distribution chamber ( 11 , 21 ); and a control unit ( 29 ) configured to control switch valves ( 33 , 33 ′) of the first and the second switching apparatus.

2 . The device of claim 1 , wherein the control unit ( 29 ) is configured to perform steps comprising:
feeding the first transition metal compound into the first gas distribution chamber ( 11 ) while feeding the first reactive gas into the second gas distribution chamber ( 21 ), wherein the substrate ( 4 ) is heated to a first process temperature so as to form the first two-dimensional layer which is the first metal-dichalcogenide on a surface of the substrate ( 4 ); and feeding the inert or dilution gas into the second gas distribution chamber ( 21 ) while feeding the second reactive gas into the first gas distribution chamber ( 11 ), wherein the substrate ( 4 ) is heated to a second process temperature so as to form the second two-dimensional layer which is the second metal-dichalcogenide on the surface of the substrate ( 4 ).

3 . A method using the device of claim 1 , the method comprising:
feeding the first transition metal compound into the first gas distribution chamber ( 11 ) while feeding the first reactive gas into the second gas distribution chamber ( 21 ), wherein the substrate ( 4 ) is heated to a first process temperature so as to form the first two-dimensional layer which is the first metal-dichalcogenide on a surface of the substrate ( 4 ); and feeding the inert or dilution gas into the second gas distribution chamber ( 21 ) while feeding the second reactive gas into the first gas distribution chamber ( 11 ), wherein the substrate ( 4 ) is heated to a second process temperature so as to form the second two-dimensional layer which is the second metal-dichalcogenide on the surface of the substrate ( 4 ).

4 . The device of claim 1 , wherein the first bubbler ( 32 ) contains a molybdenum-compound.

5 . The device of claim 1 , wherein the second bubbler ( 32 ′) contains a tungsten-compound.

6 . The device of claim 1 , wherein the first bubbler ( 32 ) contains a molybdenum-compound and the second bubbler ( 32 ′) contains a tungsten-compound.

7 . A device for depositing a heterostructure having a first and a second two-dimensional layer on a substrate ( 4 ), the first and second two-dimensional layers being different from one another, the device comprising:
a chemical vapor deposition (CVD) reactor ( 1 ) with a process chamber ( 3 ), a gas inlet member ( 2 ), the gas inlet member ( 2 ) including a first gas distribution chamber ( 11 ) and a second gas distribution chamber ( 21 ) separated from the first gas distribution chamber ( 11 ), wherein the first and second gas distribution chambers ( 11 , 21 ) are arranged vertically one above another, and wherein respective gas outlet openings ( 14 ) fluidly coupled to the first gas distribution chamber ( 11 ) and respective gas outlet openings ( 24 ) fluidly coupled to the second gas distribution chamber ( 21 ) are arranged uniformly over an entire gas outlet surface ( 25 ) of the gas inlet member ( 2 ); a first reactive gas source ( 40 ) configured to deliver a first reactive gas that is a hydrocarbon compound; a second reactive gas source ( 40 ′) configured to deliver a second reactive gas that is borazine; an inert gas source ( 39 , 39 ′) configured to deliver an inert or dilution gas; and a control unit ( 29 ) configured to control valves ( 38 , 38 ′).

8 . The device of claim 7 , wherein the control unit ( 29 ) is configured perform steps comprising:
feeding the inert or dilution gas into the first gas distribution chamber ( 11 ) while feeding the first reactive gas into the second gas distribution chamber ( 21 ), wherein the substrate ( 4 ) is heated to a first process temperature so as to form the first two-dimensional layer which is graphene on a surface of the substrate ( 4 ) from decomposition products of the first reactive gas; and feeding the inert or dilution gas into the second gas distribution chamber ( 21 ) while feeding the second reactive gas into the first gas distribution chamber ( 11 ), wherein the substrate ( 4 ) is heated to a second process temperature so as to form the second two-dimensional layer which is hexagonal boron nitride (hBN) on the surface of the substrate ( 4 ) from decomposition products of the second reactive gas.

9 . A method using the device of claim 7 , the method comprising:
feeding the inert or dilution gas into the first gas distribution chamber ( 11 ) while feeding the first reactive gas into the second gas distribution chamber ( 21 ), wherein the substrate ( 4 ) is heated to a first process temperature so as to form the first two-dimensional layer which is graphene on a surface of the substrate ( 4 ) from decomposition products of the first reactive gas; and feeding the inert or dilution gas into the second gas distribution chamber ( 21 ) while feeding the second reactive gas into the first gas distribution chamber ( 11 ), wherein the substrate ( 4 ) is heated to a second process temperature so as to form the second two-dimensional layer which is hexagonal boron nitride (hBN) on the surface of the substrate ( 4 ) from decomposition products of the second reactive gas.

10 . A device for depositing a heterostructure having a first and a second two-dimensional layer on a substrate ( 4 ), the first and second two-dimensional layers being different from one another, the device comprising:
a chemical vapor deposition (CVD) re

Assignees

• Aixtron Se

Inventors

• Teo Kenneth B K
• Mcaleese Clifford
• Conran Ben Richard

Classifications

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/45565 Primary

  Shower nozzles · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/305

  Sulfides, selenides, or tellurides · CPC title

• C23C16/45574 Primary

  Nozzles for more than one gas · CPC title