Ceramics with adaptive thermal coefficients and high fluorine resistance at high temperatures

Patent metadata

Field	Value
Publication number	US-2025376421-A1
Application number	US-202418735446-A
Country	US
Kind code	A1
Filing date	Jun 6, 2024
Priority date	Jun 6, 2024
Publication date	Dec 11, 2025
Grant date	—

Abstract

Embodiments described herein generally relate to process for processing ceramic compositions for use in semiconductor processing applications. More specifically, embodiments relate to thermal, fluorine, and plasma resistant ceramic compositions for use in semiconductor processing. In some embodiments, a ceramic composition includes a Group 13 metal based compound, an alkaline-earth metal based compound, a rare earth metal based compound, and a coefficient of thermal expansion (CTE) modifying compound. In some embodiments, a component of a plasma processing chamber includes an outer surface having a ceramic composition. The ceramic composition includes a Group 13 metal based compound, an alkaline-earth metal based compound, a rare earth metal based compound, and a coefficient of thermal expansion (CTE) modifying compound.

First claim

What is claimed is:

1 . A ceramic composition, comprising:
a Group 13 metal based compound; an alkaline-earth metal based compound; a rare earth metal based compound; and a coefficient of thermal expansion (CTE) modifying compound.

2 . The ceramic composition of claim 1 , wherein the Group 13 metal based compound is selected from the group consisting of aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum fluoride, aluminum oxy-fluoride, and combinations thereof.

3 . The ceramic composition of claim 1 , wherein the ceramic composition further comprises a modified CTE of about 3 ppm/° C. (parts per million per degree Celsius) to about 18 ppm/° C.

4 . The ceramic composition of claim 1 , wherein the Group 13 metal based compound is present in the composition in an amount of about 20 mol % to about 80 mol %.

5 . The ceramic composition of claim 1 , wherein the alkaline-earth metal based compound is selected from the group consisting of magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, strontium oxide, strontium fluoride, barium oxide, barium fluoride, and combinations thereof.

6 . The ceramic composition of claim 1 , wherein the alkaline-earth metal based compound is MgO.

7 . The ceramic composition of claim 1 , wherein the alkaline-earth metal based compound is present in the composition in an amount of about 20 mol % to about 80 mol %.

8 . The ceramic composition of claim 1 , wherein the CTE modifying compound is selected from the group consisting of ScF 3 , CaF 2 , YF 3 , BaF 2 , ZnF 2 , TiF 3 , MgF 2 and combinations thereof.

9 . The ceramic composition of claim 1 , wherein the CTE modifying compound is ScF 3 .

10 . The ceramic composition of claim 1 , wherein the CTE modifying compound is present in the composition in an amount of about 0.01 mol % to about 25 mol %.

11 . A component of a plasma processing chamber, comprising:
an outer surface comprising a ceramic composition, the ceramic composition comprising:
a Group 13 metal based compound;
an alkaline-earth metal based compound;
a rare earth metal based compound; and
a coefficient of thermal expansion (CTE) modifying compound.

12 . The component of claim 11 , wherein the Group 13 metal based compound is selected from the group consisting of aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum fluoride, aluminum oxy-fluoride, and combinations thereof.

13 . The component of claim 11 , wherein the Group 13 metal based compound is present in the ceramic composition in an amount of about 20 mol % to about 80 mol %.

14 . The component of claim 11 , wherein the alkaline-earth metal based compound is selected from the group consisting of magnesium oxide, calcium oxide, strontium oxide, barium oxide, and combinations thereof.

15 . The component of claim 11 , wherein the alkaline-earth metal based compound is MgO.

16 . The component of claim 11 , wherein the alkaline-earth metal based compound is present in the ceramic composition in an amount of about 20 mol % to about 80 mol %.

17 . The component of claim 11 , wherein the CTE modifying compound is selected from the group consisting of ScF 3 , CaF 2 , YF 3 , BaF 2 , ZnF 2 , TiF 3 , MgF 2 and combinations thereof.

18 . The component of claim 11 , wherein the CTE modifying compound is ScF 3 .

19 . The component of claim 11 , wherein the CTE modifying compound is present in the ceramic composition in an amount of about 0.01 mol % to about 25 mol %.

20 . The component of claim 11 , wherein the component is selected from the group consisting of lift pins, edge rings, isolators, heaters, electrostatic chucks, nozzles, and baffles.

Assignees

• Applied Materials Inc

Inventors

• Woo Katherine
• Sun Jennifer Y

Classifications

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• C04B2235/3206

  Magnesium oxides or oxide-forming salts thereof · CPC title

• C04B2235/9669

  Resistance against chemicals, e.g. against molten glass or molten salts · CPC title

• C04B2235/445

  Fluoride containing anions, e.g. fluosilicate · CPC title

• C04B2235/3225

  Yttrium oxide or oxide-forming salts thereof · CPC title