Light-emitting device

Patent metadata

Field	Value
Publication number	US-2025366277-A1
Application number	US-202519211810-A
Country	US
Kind code	A1
Filing date	May 19, 2025
Priority date	May 23, 2024
Publication date	Nov 27, 2025
Grant date	—

Abstract

A light-emitting device includes: a semiconductor part including a light-emitting layer; a dielectric film disposed on an upper surface of the semiconductor part and including an oxide; and a light-transmissive member disposed on an upper surface of the dielectric film. A refractive index of the dielectric film is lower than a refractive index of the semiconductor part and is closer to a refractive index of a light-transmissive member than to the refractive index of the semiconductor part. The oxide contains Al and Ta. When a sum of an Al content in the oxide and a Ta content in the oxide is taken as 100 atomic %, the Ta content is greater than 0 atomic % and less than or equal to 60 atomic %.

First claim

What is claimed is:

1 . A light-emitting device comprising:
a semiconductor part comprising a light-emitting layer; a dielectric film disposed on an upper surface of the semiconductor part and comprising an oxide; and a light-transmissive member disposed on an upper surface of the dielectric film, wherein a refractive index of the dielectric film is lower than a refractive index of the semiconductor part and is closer to a refractive index of the light-transmissive member than to the refractive index of the semiconductor part, the oxide contains Al and Ta, and when a sum of an Al content in the oxide and a Ta content in the oxide is taken as 100 atomic %, the Ta content is greater than 0 atomic % and less than or equal to 60 atomic %.

2 . The light-emitting device according to claim 1 , wherein the Ta content is greater than 0 atomic % and less than 25 atomic %.

3 . The light-emitting device according to claim 1 , wherein the Ta content is 25 atomic % or more and 60 atomic % or less.

4 . The light-emitting device according to claim 1 , wherein an arithmetic average roughness Ra of the upper surface of the semiconductor part is 100 nm or more and 250 nm or less.

5 . The light-emitting device according to claim 1 , wherein the refractive index of the dielectric film is higher than the refractive index of the light-transmissive member.

6 . The light-emitting device according to claim 1 , wherein the content of Ta in the dielectric film is larger in a lower surface side of the dielectric film than in an upper surface side of the dielectric film.

7 . The light-emitting device according to claim 1 , wherein the light-transmissive member comprises a phosphor.

8 . The light-emitting device according to claim 1 , wherein the light-emitting layer is configured to emit light having a peak emission wavelength in a range of 350 nm or more and 500 nm or less.

9 . The light-emitting device according to claim 1 , wherein the refractive index of the light-transmissive member is 1.7 or more and 1.9 or less.

10 . The light-emitting device according to claim 1 , wherein the refractive index of the semiconductor part is 2.0 or more and 3.0 or less.

11 . The light-emitting device according to claim 1 , wherein a thickness of the dielectric film is 1 μm or more and 50 μm or less.

12 . The light-emitting device according to claim 1 , wherein a thickness of the light-transmissive member is 100 μm or more and 400 μm or less.

13 . A light-emitting device comprising:
a semiconductor part comprising a light-emitting layer; a first light-transmissive member disposed on an upper surface of the semiconductor part; a dielectric film disposed on an upper surface of the first light-transmissive member and comprising an oxide; and a second light-transmissive member disposed on an upper surface of the dielectric film, wherein a refractive index of the dielectric film is lower than a refractive index of the semiconductor part and is closer to a refractive index of the second light-transmissive member than to the refractive index of the semiconductor part, a refractive index of the first light-transmissive member is lower than the refractive index of the semiconductor part and is closer to the refractive index of the dielectric film than to the refractive index of the semiconductor part, the oxide contains Al and Ta, and when a sum of an Al content in the oxide and a Ta content in the oxide is taken as 100 atomic %, the Ta content is greater than 0 atomic % and less than or equal to 60 atomic %.

14 . The light-emitting device according to claim 13 , wherein the refractive index of the first light-transmissive member is lower than the refractive index of the dielectric film.

15 . The light-emitting device according to claim 13 , wherein the first light-transmissive member is a sapphire substrate.

Assignees

• Nichia Corp

Inventors

• Kondo Hiroki

Classifications

• H10H20/855 Primary

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/84 Primary

  Coatings, e.g. passivation layers or antireflective coatings · CPC title