Junction temperature reduction with optimized gate to gate pitch

Patent metadata

Field	Value
Publication number	US-2025366144-A1
Application number	US-202519213351-A
Country	US
Kind code	A1
Filing date	May 20, 2025
Priority date	May 21, 2024
Publication date	Nov 27, 2025
Grant date	—

Abstract

A radio frequency device comprising a semiconductor substrate and a field-effect transistor disposed on the semiconductor substrate. The field-effect transistor includes a plurality of gate fingers that extend parallel in a width dimension. The plurality of gate fingers are spaced apart from each other along a length dimension that is orthogonal to the width dimension with a first gate-to-gate pitch and a second gate-to-gate pitch being different from the first gate-to-gate pitch. The first gate-to-gate pitch may correspond to two adjacent gate fingers arranged at an outer region of the plurality of gate fingers and the second gate-to-gate pitch may correspond to two adjacent gate fingers arranged at an inner region of the plurality of gate fingers, the first gate-to-gate pitch being smaller than the second gate-to-gate pitch. The inner region may arranged closer to a central region of the plurality of gate fingers than the outer region.

First claim

What is claimed is:

1 . A radio frequency device, comprising:
a semiconductor substrate; and a field-effect transistor disposed on the semiconductor substrate, the field-effect transistor including a plurality of gate fingers that extend parallel in a width dimension, the plurality of gate fingers being spaced apart from each other along a length dimension that is orthogonal to the width dimension with a first gate-to-gate pitch and a second gate-to-gate pitch being different from the first gate-to-gate pitch.

2 . The radio frequency device of claim 1 wherein the first gate-to-gate pitch corresponds to two adjacent gate fingers arranged at an outer region of the plurality of gate fingers and the second gate-to-gate pitch corresponds to two adjacent gate fingers arranged at an inner region of the plurality of gate fingers, the first gate-to-gate pitch being smaller than the second gate-to-gate pitch.

3 . The radio frequency device of claim 2 wherein a ratio of the second gate-to-gate pitch compared to the first gate-to-gate pitch is in the range of about 70/45 to about 70/65.

4 . The radio frequency device of claim 1 wherein gate fingers of the plurality of gate fingers that have the first gate-to-gate pitch have a mirrored configuration with respect to the length dimension.

5 . The radio frequency device of claim 1 wherein gate fingers of the plurality of gate fingers that have the second gate-to-gate pitch have a mirrored configuration with respect to the length dimension.

6 . The radio frequency device of claim 1 wherein the plurality of gate fingers is further spaced apart from each other along the length dimension with a third gate-to-gate pitch being different from the first gate-to-gate pitch and from the second gate-to-gate pitch.

7 . The radio frequency device of claim 1 wherein gate fingers of the plurality of gate fingers that have the third gate-to-gate pitch have a mirrored configuration with respect to the length dimension.

8 . A radio frequency device, comprising:
a semiconductor substrate; and a plurality of field-effect transistors disposed in series on the semiconductor substrate, the plurality of field-effect transistors being spaced apart from each other along a length dimension with a first cell-to-cell pitch and a second cell-to-cell pitch being different from the first cell-to-cell pitch.

9 . The radio frequency device of claim 8 wherein the first cell-to-cell pitch corresponds to two adjacent field-effect transistors arranged at an outer region of the radio frequency device and the second cell-to-cell pitch corresponds to two adjacent field-effect transistors arranged at an inner region of the radio frequency device, the first cell-to-cell pitch being smaller than the second cell-to-cell pitch.

10 . The radio frequency device of claim 8 wherein field-effect transistors of the plurality of field-effect transistors that have the first cell-to-cell pitch have a mirrored configuration with respect to the length dimension.

11 . The radio frequency device of claim 8 wherein field-effect transistors of the plurality of field-effect transistors that have the second cell-to-cell pitch have a mirrored configuration with respect to the length dimension.

12 . The radio frequency device of claim 8 wherein the plurality of field-effect transistors is further spaced apart from each other along the length dimension with a third cell-to-cell pitch being different from the first cell-to-cell pitch and from the second cell-to-cell pitch.

13 . The radio frequency device of claim 8 wherein each of the plurality of field-effect transistors includes a plurality of gate fingers that extend parallel in a width dimension, the plurality of gate fingers being spaced apart from each other along the length dimension with a first gate-to-gate pitch and a second gate-to-gate pitch being different from the first gate-to-gate pitch.

14 . The radio frequency module of claim 13 wherein the first gate-to-gate pitch corresponds to two adjacent gate fingers arranged at an outer region of the plurality of gate fingers and the second gate-to-gate pitch corresponds to two adjacent gate fingers arranged at an inner region of the plurality of gate fingers, the first gate-to-gate pitch being smaller than the second gate-to-gate pitch.

15 . The radio frequency module of claim 14 wherein a ratio of the second gate-to-gate pitch compared to the first gate-to-gate pitch is in the range of about 70/45 to about 70/65.

16 . The radio frequency module of claim 13 wherein gate fingers of the plurality of gate fingers that have the first gate-to-gate pitch have a mirrored configuration with respect to the length dimension.

17 . The radio frequency module of claim 13 wherein gate fingers of the plurality of gate fingers that have the second gate-to-gate pitch have a mirrored configuration with respect to the length dimension.

18 . The radio frequency module of claim 13 wherein the plurality of gate fingers is further spaced apart from each other along the length dimension with a third gate-to-gate pitch being different from the first gate-to-gate pitch and from the second gate-to-gate pitch.

19 . The radio frequency module of claim 13 wherein gate fingers of the plurality of gate fingers that have the third gate-to-gate pitch have a mirrored configuration with respect to the length dimension.

Assignees

• Skyworks Solutions Inc

Inventors

• Zhu Yu
• Blin Guillaume Alexandre

Classifications

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title

• H10W70/635

  Through-vias · CPC title

• H10W44/20 Primary

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10D64/257

  for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673) · CPC title

• H03F3/195

  in integrated circuits · CPC title