Method and apparatus for forming semiconductor device

Patent metadata

Field	Value
Publication number	US-2025364275-A1
Application number	US-202519216771-A
Country	US
Kind code	A1
Filing date	May 23, 2025
Priority date	May 27, 2024
Publication date	Nov 27, 2025
Grant date	—

Abstract

A method and an apparatus for forming a semiconductor device are provided. The method includes: providing a substrate; mounting at least one electronic component on a surface of the substrate; forming an encapsulant on the surface of the substrate to encapsulate the electronic component; loading the substrate into a semiconductor device magazine; and irradiating the encapsulant with a microwave radiation to cure the encapsulant.

First claim

1 . A method for forming a semiconductor device, comprising:
providing a substrate; mounting at least one electronic component on a surface of the substrate; forming an encapsulant on the surface of the substrate to encapsulate the electronic component; loading the substrate into a semiconductor device magazine; and irradiating the encapsulant with a microwave radiation to cure the encapsulant.

2 . The method of claim 1 , wherein the semiconductor device magazine has a plurality of apertures through which the microwave radiation can pass through to irradiate the encapsulant on the surface of the substrate.

3 . The method of claim 1 , wherein the semiconductor device magazine comprises a material with a high reflectivity.

4 . The method of claim 3 , wherein the semiconductor device magazine comprises Al, Cu, Ag, or Au.

5 . The method of claim 1 , wherein the microwave radiation is a variable frequency microwave (VFM) radiation.

6 . The method of claim 1 , wherein a frequency of the microwave radiation ranges from 1 GHz to 1000 GHz.

7 . The method of claim 1 , wherein irradiating the encapsulant with the microwave radiation comprises:
irradiating the encapsulant with the microwave radiation for a duration ranging between 10 seconds and 10 minutes.

8 . A method for forming a semiconductor device, comprising:
providing a semiconductor package comprising at least one curable material; loading the semiconductor package into a semiconductor device magazine; and irradiating the semiconductor package with a microwave radiation to cure the curable material of the semiconductor package.

9 . The method of claim 8 , wherein the curable material comprises an organic material containing polar molecules.

10 . The method of claim 8 , wherein the curable material comprises an adhesive, an epoxy molding compound, a flux solution, or a soldering material.

11 . The method of claim 8 , wherein the semiconductor device magazine has a plurality of apertures through which the microwave radiation can pass through to irradiate the semiconductor package.

12 . The method of claim 8 , wherein the semiconductor device magazine comprises a material with a high reflectivity.

13 . The method of claim 12 , wherein the semiconductor device magazine comprises Al, Cu, Ag, or Au.

14 . The method of claim 8 , wherein the microwave radiation is a variable frequency microwave (VFM) radiation.

15 . The method of claim 8 , wherein a frequency of the microwave radiation ranges from 1 GHz to 1000 GHz.

16 . The method of claim 8 , wherein irradiating the semiconductor package with the microwave radiation comprises:
irradiating the semiconductor package with the microwave radiation for a duration ranging between 10 seconds and 10 minutes.

17 . An apparatus for forming a semiconductor device, comprising:
a heating chamber; a heating source mounted inside the heating chamber and configured for irradiating a microwave radiation; and a semiconductor device magazine disposed inside the heating chamber and configured for carrying a semiconductor package comprising at least one curable material, wherein the curable material can be cured when irradiated by the microwave radiation.

18 . The apparatus of claim 17 , wherein the semiconductor device magazine has a plurality of apertures through which the microwave radiation can pass through to irradiate the curable material of the semiconductor package.

19 . The apparatus of claim 17 , wherein the semiconductor device magazine comprises a material with a high reflectivity.

20 . The apparatus of claim 17 , wherein the microwave radiation is a variable frequency microwave (VFM) radiation.

Assignees

• Jcet Stats Chippac Korea Ltd

Inventors

• Yun Yeojun
• Lee Seunghyun
• Lee Heesoo
• Jeon Younghoon

Classifications

• H10P72/0436 Primary

  mainly by radiation · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W74/014 Primary

  using batch processing · CPC title

• H10W74/016 Primary

  using moulds · CPC title

• H01L21/67115

  Electricity · mapped topic