Solar cell and photovoltaic module

Patent metadata

Field	Value
Publication number	US-2025359391-A1
Application number	US-202519098548-A
Country	US
Kind code	A1
Filing date	Apr 2, 2025
Priority date	May 15, 2024
Publication date	Nov 20, 2025
Grant date	—

Abstract

A solar cell including: a semiconductor substrate having a first surface and a second surface opposite to each other, and a plurality of side surfaces adjacently connected between the first and the second surfaces; a passivated contact structure, located on a part of the first surface, including an interface passivation layer and a first doped semiconductor layer that are sequentially stacked. In a direction from the first surface to the second surface, respective side surface of the plurality of side surfaces includes a first region and a second region that are sequentially adjacent. The first region protrudes in a direction away from the respective side surface relative to the second region. The first doped semiconductor layer is located on a surface of the first region. The first doped semiconductor layer located in the first region and the first doped semiconductor layer located on the first surface are integrally continuous.

First claim

What is claimed is:

1 . A solar cell, comprising:
a semiconductor substrate, wherein the semiconductor substrate comprises:
a first surface and a second surface that are opposite to each other, and
a plurality of side surfaces connected between the first surface and the second surface; and
a passivated contact structure, wherein at least a portion of the passivated contact structure is located on a portion of the first surface, wherein the passivated contact structure comprises an interface passivation layer and a first doped semiconductor layer that are stacked on the portion of the first surface, wherein: a respective side surface of the plurality of side surfaces comprises a first region and a second region that are arranged along a first direction from the first surface to the second surface, the first region protrudes in a second direction away from the respective side surface relative to the second region; and a portion of the first doped semiconductor layer located on a surface of the first region is integrally continuous with a portion of the first doped semiconductor layer located on the first surface.

2 . The solar cell according to claim 1 , wherein a portion of the surface of the first region adjacent to the second region is not covered by the first doped semiconductor layer.

3 . The solar cell according to claim 2 , wherein, in the first direction, a distance between the first doped semiconductor layer located on the surface of the first region and the second region is greater than or equal to 1 μm.

4 . The solar cell according to claim 2 , wherein
a ratio between a width of the first region in a direction perpendicular to the first surface and a thickness of the semiconductor substrate ranges from 1% to 20%.

5 . The solar cell according to claim 1 , wherein
a width of the first region in a direction perpendicular to the first surface ranges from 0.5 μm to 20 μm.

6 . The solar cell according to claim 2 , wherein, in a direction perpendicular to the first surface, a distribution width of the first doped semiconductor layer in the first region is less than 80% of a width of the first region.

7 . The solar cell according to claim 1 , wherein
a first region of at least one of the plurality of side surfaces is an inclined surface extending, in the second direction, from a side away from the first surface to a side close to the first surface.

8 . The solar cell according to claim 1 , wherein the first region comprises an edge extending approximately parallel to the first surface.

9 . The solar cell according to claim 1 , wherein
a plurality of holes are provided in the first region, the plurality of holes recess into the semiconductor substrate in a direction parallel to the first surface.

10 . The solar cell according to claim 9 , wherein a distribution density of respective holes of the plurality of holes in a region close to the first surface is less than a distribution density of respective holes of the plurality of holes in a region close to the second region.

11 . The solar cell according to claim 10 , wherein
a radial size of the plurality of holes gradually decreases from the surface of the first region to the semiconductor substrate; and the radial size of the plurality of holes is less than 5 μm.

12 . The solar cell according to claim 1 , further comprising:
a second doped semiconductor layer, wherein at least a portion of the second doped semiconductor layer is located on the second surface of the semiconductor substrate; and a second passivation anti-reflection layer, wherein at least a portion of the second passivation anti-reflection layer is located on a surface of the second doped semiconductor layer facing away from the semiconductor substrate.

13 . The solar cell according to claim 1 , wherein the solar cell is a back contact solar cell; and
the first doped semiconductor layer comprises a plurality of third doped semiconductor layers and a plurality of fourth doped semiconductor layer, the plurality of third doped semiconductor layers and the plurality of fourth doped semiconductor layer are alternately distributed on the first surface, wherein one of each of the third doped semiconductor layers and each of the fourth doped semiconductor layer is N-type doped, and the other of each of the third doped semiconductor layers and each of the fourth doped semiconductor layer is P-type doped.

14 . The solar cell according to claim 1 , further comprising:
a first passivation anti-reflection layer, wherein at least a portion of the first passivation anti-reflection layer is located on a surface of the passivated contact structure facing away from the semiconductor substrate; and a first electrode, wherein the first electrode penetrates the first passivation anti-reflection layer to be in contact with the first doped semiconductor layer, wherein a distance between the first electrode and the first region in a direction parallel to the first surface is greater than or equal to 300 μm.

15 . The solar cell according to claim 1 , wherein:
each of the plurality of side surfaces further comprises a third region adjacent to the second region, the third region is closer to the second surface than the second region; and the third region protrudes in the second direction.

16 . The solar cell according to claim 15 , wherein a protrusion height of the third region is greater than a protrusion height of the first region.

17 . The solar cell according to claim 15 , wherein a first pyramid-base texture structure is formed in the second region, and a side length of at least a part of the first pyramid-base texture structure is greater than or equal to 10 μm.

18 . The solar cell according to claim 17 , wherein:
the third region comprises a fifth doped semiconductor layer having a first doping type opposite to a second doping type of the first doped semiconductor layer; and a ratio between a maximum extension length of the fifth doped semiconductor layer in a thickness direction of the semiconductor substrate and the thickness of the semiconductor substrate is greater than 5% and less than or equal to 50%.

19 . The solar cell according to claim 17 , wherein a second pyramid-base texture structure is formed on the first surface, and the side length of at least the part of the first pyramid-base texture structure is greater than a side length of the second pyramid-base texture structure.

20 . A photovoltaic module, comprising a solar cell, wherein the solar cell comprises:
a semiconductor substrate, wherein the semiconductor substrate comprises:
a first surface and a second surface that are opposite to each other, and
a plurality of side surfaces connected between the first surface and the second surface; and
a passivated contact structure, wherein at least a portion of the passivated contact structure is located on a portion of the first surface, wherein the passivated contact structure comprises an interface passivation layer and a first doped semiconductor layer that are stacked on the portion of the first surface, wherein: a respective side surface of the plurality of side surfaces comprises a first region and a second region that are arranged along a first direction from the first surface to the second surface, the first region protrudes in a second direction away from the respective side surface relative to the second region; and a portion of the first doped semiconductor layer located on a surface of the first region is integrally con

Assignees

• Longi Green Energy Technology Co Ltd

Inventors

• Li Zhenguo
• Tong Hongbo
• Jin Yupeng
• Yu Yuan

Classifications

• H10F71/133

  Providing edge isolation · CPC title

• H10F10/166

  the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells · CPC title

• H10F77/315

  the coatings being antireflective or having enhancing optical properties · CPC title

• H10F77/147 Primary

  Shapes of bodies · CPC title

• H10F77/219

  Arrangements for electrodes of back-contact photovoltaic cells · CPC title