Laser element and electronic device

Patent metadata

Field	Value
Publication number	US-2025329990-A1
Application number	US-202218849940-A
Country	US
Kind code	A1
Filing date	Mar 30, 2022
Priority date	Mar 30, 2022
Publication date	Oct 23, 2025
Grant date	—

Abstract

[Problem] An excitation light output is improved without generating heat and lowering an operational life. [Solution] A laser element includes: a laminated semiconductor layer that includes a first reflection layer used for light of a first wavelength and an active layer that performs surface light emission at the first wavelength; a second reflection layer that is disposed closer to a light emission surface side than the laminated semiconductor layer, and is used for the light of the first wavelength; and a polarization splitting element that individually resonates and multiplexes each of orthogonal polarized beams included in light emitted from the laminated semiconductor layer between the first reflection layer and the second reflection layer.

First claim

1 . A laser element comprising:
a laminated semiconductor layer that includes a first reflection layer used for light of a first wavelength and an active layer that performs surface light emission at the first wavelength; a second reflection layer that is disposed closer to a light emission surface side than the laminated semiconductor layer, and is used for the light of the first wavelength; and a polarization splitting element that individually resonates and multiplexes each of orthogonal polarized beams included in light emitted from the laminated semiconductor layer between the first reflection layer and the second reflection layer.

2 . The laser element according to claim 1 , wherein
the laminated semiconductor layer includes a plurality of laminated semiconductor regions associated with the orthogonal polarized beam, and the polarization splitting element individually resonates and multiplexes a corresponding polarized beam between the first reflection layer and the second reflection layer for each of the plurality of laminated semiconductor regions.

3 . The laser element according to claim 1 , wherein the polarization splitting element includes a first surface that is in contact with a light emission surface of the laminated semiconductor layer, and a second surface that is disposed on an opposite side to the first surface and between the first reflection layer and the second reflection layer.

4 . The laser element according to claim 1 , wherein
the orthogonal polarized beams include orthogonal polarized beams of different wavelengths, and the polarization splitting element individually resonates and multiplexes each of the orthogonal polarized beams including the orthogonal polarized beams of the different wavelengths between the first reflection layer and the second reflection layer.

5 . The laser element according to claim 4 , wherein
the orthogonal polarized beams include a Transverse Magnetic (TM) polarized beam and a Transverse Electric (TE) polarized beam, and the polarization splitting element individually resonates and multiplexes each of the TE polarized beam and the TM polarized beam between the first reflection layer and the second reflection layer.

6 . The laser element according to claim 5 , wherein the polarization splitting element multiplexes the TE polarized beam with the TM polarized beam inside the polarization splitting element.

7 . The laser element according to claim 1 , wherein
the polarization splitting element includes a laminated body obtained by alternately laminating a plurality of polarization splitting films and a plurality of reflection films with an interval spaced apart from each other, the laminated body has a cross-sectional surface obtained by cutting the laminated body in a direction of 45 degrees in a normal direction of a lamination surface, and the polarization splitting element is disposed such that the normal direction of the cross-sectional surface is parallel to a normal direction of the laminated semiconductor layer.

8 . The laser element according to claim 1 , wherein the polarization splitting element includes a birefringent material for splitting the light emitted from the laminated semiconductor layer into the orthogonal polarized beams.

9 . The laser element according to claim 1 , further comprising a laser medium that is disposed closer to the light emission surface side than the polarization splitting element, and resonates at a second wavelength different from the first wavelength.

10 . The laser element according to claim 9 , further comprising:
a third reflection layer that is disposed on a first end surface of the laser medium on a side of the polarization splitting element, and is used for light of the second wavelength; and a fourth reflection layer that is disposed on a second end surface of the laser medium on a side opposite to the first end surface, and is used for the light of the second wavelength.

11 . The laser element according to claim 10 , wherein the third reflection layer is disposed closer to the light emission surface side than the second reflection layer.

12 . The laser element according to claim 10 , wherein the third reflection layer is disposed between the polarization splitting element and the second reflection layer.

13 . The laser element according to claim 12 , wherein the third reflection layer is in contact with an end surface of the polarization splitting element.

14 . The laser element according to claim 10 , wherein the fourth reflection layer is in contact with the second reflection layer or disposed closer to the light emission surface side than the second reflection layer.

15 . The laser element according to claim 9 , further comprising a saturable absorber that is disposed closer to the light emission surface side than the laser medium.

16 . The laser element according to claim 15 , further comprising:
a third reflection layer that is disposed on an end surface of the laser medium on a side facing the polarization splitting element, and is used for light of the second wavelength; and a fourth reflection layer that is disposed on the light emission surface side of the saturable absorber, and is used for the light of the second wavelength.

17 . The laser element according to claim 16 , wherein the third reflection layer is disposed closer to the light emission surface side than the second reflection layer.

18 . The laser element according to claim 16 , wherein the second reflection layer is disposed between the third reflection layer and the fourth reflection layer.

19 . The laser element according to claim 15 , wherein each of the laminated semiconductor layer, the polarization splitting element, the laser medium, and the saturable absorber is divided into a plurality of regions in association with a plurality of light emitting units that emit pulse laser light of the second wavelength disposed at a predetermined interval.

20 . An electronic device comprising:
a laser element; and a control unit that performs control to emit light from the laser element, wherein the laser element includes a laminated semiconductor layer that includes a first reflection layer used for light of a first wavelength and an active layer that performs surface light emission on the first wavelength, a second reflection layer that is disposed closer to a light emission surface side than the laminated semiconductor layer, and is used for the light of the first wavelength, and a polarization splitting element that individually resonates and multiplexes each of orthogonal polarized beams included in light emitted from the laminated semiconductor layer between the first reflection layer and the second reflection layer.

Assignees

• Sony Group Corp

Inventors

• Yonezawa Gen

Classifications

• H01S5/18361

  Structure of the reflectors, e.g. hybrid mirrors · CPC title

• H01S3/2383

  Parallel arrangements · CPC title

• H01S3/1618

  ytterbium · CPC title

• H01S3/1611

  neodymium · CPC title

• H01S3/094084

  with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators · CPC title