Semiconductor device and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-2025324709-A1
Application number	US-202418892092-A
Country	US
Kind code	A1
Filing date	Sep 20, 2024
Priority date	Apr 10, 2024
Publication date	Oct 16, 2025
Grant date	—

Abstract

A semiconductor device according to an embodiment includes: a first electrode including a first metal layer, a second metal layer, and an insulator; a second electrode; a semiconductor layer provided between the first electrode and the second electrode; and an insulating layer provided between the first electrode and the semiconductor layer, wherein the first electrode includes a first portion electrically connecting the semiconductor layer and the first electrode, the first portion is provided between one part of the insulating layer and another part of the insulating layer in a cross section parallel to a first direction connecting the first electrode and the second electrode, and the first portion includes the first metal layer in contact with the semiconductor layer, the second metal layer, and the insulator provided between the first metal layer and the second metal layer.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a first electrode including a first metal layer, a second metal layer, and an insulator; a second electrode; a semiconductor layer provided between the first electrode and the second electrode; and an insulating layer provided between the first electrode and the semiconductor layer, wherein the first electrode includes a first portion electrically connecting the semiconductor layer and the first electrode, the first portion is provided between one part of the insulating layer and another part of the insulating layer in a cross section parallel to a first direction connecting the first electrode and the second electrode, and the first portion includes the first metal layer in contact with the semiconductor layer, the second metal layer, and the insulator provided between the first metal layer and the second metal layer.

2 . The semiconductor device according to claim 1 , wherein
in the cross section, the insulator is surrounded by the first metal layer and the second metal layer.

3 . The semiconductor device according to claim 1 , wherein
the insulator contains one of an oxide, a nitride, and an oxynitride.

4 . The semiconductor device according to claim 1 , wherein
a chemical composition of the second metal layer is different from a chemical composition of the first metal layer.

5 . The semiconductor device according to claim 1 , wherein
the first metal layer contains tungsten (W), and the second metal layer contains aluminum (Al).

6 . The semiconductor device according to claim 1 , wherein
in the cross section, a part of a side surface of the first portion is in contact with the semiconductor layer.

7 . The semiconductor device according to claim 1 , wherein
in the cross section, a first thickness of the insulator of the first portion in the first direction is thicker than a second thickness of the first metal layer of a bottom surface of the first portion in the first direction.

8 . The semiconductor device according to claim 1 , wherein
in the cross section, a first thickness of the insulator of the first portion in the first direction is larger than a first width of the insulator of the first portion in a second direction perpendicular to the first direction.

9 . The semiconductor device according to claim 1 , wherein
in the cross section, a first width of the insulator of the first portion in a second direction perpendicular to the first direction is equal to or more than ½ of a second width of the first portion in the second direction.

10 . The semiconductor device according to claim 1 , wherein
in the cross section, a third thickness of the second metal layer of the first portion in the first direction is thicker than a second thickness of the first metal layer of a bottom surface of the first portion in the first direction.

11 . The semiconductor device according to claim 1 , wherein
in the cross section, a second thickness of the first metal layer of a bottom surface of the first portion in the first direction is thicker than a fourth thickness of the first metal layer of a side surface of the first portion in a second direction perpendicular to the first direction.

12 . A semiconductor device comprising:
a first electrode including a first metal layer, a second metal layer, and an insulator; a second electrode; a semiconductor layer provided between the first electrode and the second electrode; a first insulating layer provided between the first electrode and the semiconductor layer; a second insulating layer provided between the first insulating layer and the first electrode; and a conductive layer provided between the first insulating layer and the second insulating layer, wherein the first electrode includes a first portion connecting the conductive layer and the first electrode, the first portion is provided between one part of the second insulating layer and another part of the second insulating layer in a cross section parallel to a first direction connecting the first electrode and the second electrode, and the first portion includes the first metal layer in contact with the conductive layer, the second metal layer, and the insulator provided between the first metal layer and the second metal layer.

13 . The semiconductor device according to claim 12 , wherein
the semiconductor layer includes a trench, the first insulating layer and the conductive layer are provided in the trench, and the first metal layer is in contact with the conductive layer in the trench.

14 . The semiconductor device according to claim 12 , wherein
the conductive layer is polycrystalline silicon.

15 . The semiconductor device according to claim 12 , wherein
in the cross section, a part of a side surface of the first portion is in contact with the conductive layer.

16 . A method for manufacturing a semiconductor device, the method comprising:
forming a first insulating film on a first layer being one of a semiconductor layer and a conductive layer; forming an opening in the first insulating film; forming a first metal film in the opening, the first metal film being in contact with the first layer; forming a second insulating film on the first metal film, the second insulating film filling the opening; removing the second insulating film around the opening; and forming a second metal film on the first metal film, the second metal film being in contact with the first metal film and the second insulating film.

17 . The method for manufacturing a semiconductor device according to claim 16 , wherein
a part of the second insulating film remains in the opening in the removing the second insulating film.

18 . The method for manufacturing a semiconductor device according to claim 16 , wherein
a thickness of the second metal film is thicker than a thickness of the first metal film.

19 . The method for manufacturing a semiconductor device according to claim 16 , wherein
the second insulating film contains one of an oxide, a nitride, and an oxynitride.

20 . The method for manufacturing a semiconductor device according to claim 16 , wherein
a chemical composition of the second metal film is different from a chemical composition of the first metal film.

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Itokazu Hiroko
• Kawamura Keiko
• Iwakaji Yoko
• Kojima Hidenobu
• Minamikawa Kazuki

Classifications

• H10D12/481

  having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title

• H10D12/038

  having a recessed gate, e.g. trench-gate IGBTs · CPC title

• H10D64/01

  Manufacture or treatment · CPC title

• H10D64/231 Primary

  Emitter or collector electrodes for bipolar transistors · CPC title

• H10D64/232 Primary

  Emitter electrodes for IGBTs · CPC title