Electrostatic chuck heater and film deposition apparatus
US-2024203779-A1 · Jun 20, 2024 · US
US2025323087A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025323087-A1 |
| Application number | US-202519018524-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 13, 2025 |
| Priority date | Apr 12, 2024 |
| Publication date | Oct 16, 2025 |
| Grant date | — |
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Provided is a substrate processing apparatus including a processing container including an upper container, a lower container, and a processing space formed inside the upper container and the lower container, support pins, a block plate having an upper surface on which the support pins are provided, a plate support provided in the lower container and configured to support a lower surface of the block plate, and a fluid supply device, wherein a chamber lower surface of the lower container in contact with the processing space includes a first surface, a first tilted surface, and a second surface extending sequentially from a center of the processing space, a vertical level of the second surface is higher than a vertical level of the first surface, and a first tilt angle formed between the first tilted surface and the first surface is an acute angle.
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What is claimed is: 1 . A substrate processing apparatus comprising: a processing container comprising an upper container, a lower container, and a processing space inside the upper container and the lower container; a support pin in the processing space and configured to support a substrate; a block plate comprising an upper surface, the support pin being on the upper surface of the block plate; a plate support in the lower container and configured to support a lower surface of the block plate opposite to the upper surface of the block plate; a first conduit line in the upper container; a second conduit line in the lower container; and a fluid supply device configured to supply processing fluid in a supercritical state to the processing space through the first conduit line, wherein a chamber lower surface of the lower container, in contact with the processing space, comprises a first surface, a first tilted surface, and a second surface extending sequentially from a center of the processing space, wherein a vertical level of the second surface is higher than a vertical level of the first surface, and wherein a first tilt angle between the first tilted surface and the first surface is an acute angle. 2 . The substrate processing apparatus of claim 1 , wherein a distance between the plate support and a first center line is less than a first radius, wherein the first radius is a radius from the first center line to a first connection point in which the first surface contacts the first tilted surface, and wherein the first center line extends vertically from a center of the upper container to a center line of the lower container. 3 . The substrate processing apparatus of claim 2 , wherein a second radius is less than a radius of the block plate, and wherein the second radius is a radius from the first center line to a second connection point in which the first tilted surface contacts the second surface. 4 . The substrate processing apparatus of claim 3 , wherein the first radius is 60 mm to 95 mm. 5 . The substrate processing apparatus of claim 3 , wherein the first surface, the second surface, and the substrate are parallel to each other. 6 . The substrate processing apparatus of claim 3 , wherein the plate support is integrated with the lower container. 7 . The substrate processing apparatus of claim 3 , wherein the chamber lower surface further comprises a second tilted surface and a third surface sequentially extending from the second surface. 8 . The substrate processing apparatus of claim 7 , wherein the first surface, the second surface, and the third surface are parallel to each other, and wherein an angle between the second tilted surface and the second surface is an acute angle. 9 . The substrate processing apparatus of claim 1 , wherein the first tilt angle is greater than a first reference angle, and wherein the first reference angle between the first surface and an extension line extending from the plate support to an outer diameter of the block plate is an acute angle. 10 . The substrate processing apparatus of claim 9 , wherein the plate support is fastened to a support fastening portion buried in the lower container, the plate support being integrated with the lower container. 11 . The substrate processing apparatus of claim 1 , wherein the first tilt angle is greater than a second reference angle, and wherein the second reference angle between the first surface and an extension line extending from a first connection point, in which the first surface contacts the first tilted surface, to an outer diameter of the block plate is an acute angle. 12 . The substrate processing apparatus of claim 1 , wherein a first height, which is a vertical distance between the first surface and the block plate, is greater than a second height, which is a vertical distance between the second surface and the block plate, and wherein a third height, which is a vertical distance between the substrate and the second surface, is greater than the second height. 13 . The substrate processing apparatus of claim 12 , wherein the second height is 0.1 to 0.25 times the first height, and the third height is 5 to 8 times the second height. 14 . The substrate processing apparatus of claim 1 , wherein the first conduit line and the second conduit line are respectively at a center of the upper container and a center of the lower container, and wherein the first conduit line is on a same line as the second conduit line. 15 . A substrate processing apparatus comprising: a processing container comprising an upper container, a lower container, and a processing space inside the upper container and the lower container; a support pin in the processing space and configured to support a substrate; a block plate comprising an upper surface, the support pin being on the upper surface of the block plate; a plate support in the lower container and configured to support a lower surface of the block plate opposite to the upper surface of the block plate; a first conduit line in the upper container; a second conduit line in the lower container; and a fluid supply device configured to supply processing fluid in a supercritical state to the processing space through the first conduit line, wherein a chamber lower surface of the lower container, in contact with the processing space, comprises a first surface, a first tilted surface, and a second surface extending sequentially from a center of the processing space, wherein a vertical level of the second surface is higher than a vertical level of the first surface, wherein a first tilt angle between the first tilted surface and a horizontal surface is an acute angle, and wherein the first tilted surface is farther from a center of the lower container than the plate support. 16 . The substrate processing apparatus of claim 15 , wherein a second connection point is closer to the center of the lower container than an outer diameter of the block plate, and wherein the first tilted surface contacts the second surface at the second connection point. 17 . The substrate processing apparatus of claim 16 , wherein an extension line of the first tilted surface contacts the block plate. 18 . The substrate processing apparatus of claim 16 , wherein the plate support is integrated with the lower container. 19 . A substrate processing apparatus comprising: a processing container comprising an upper container, a lower container, and a processing space inside the upper container and the lower container; a support pin in the processing space and configured to support a substrate; a block plate comprising an upper surface, the support pin being on the upper surface of the block plate; a plate support in the lower container and configured to support a lower surface of the block plate opposite to the upper surface of the block plate; a first conduit line in the upper container; a second conduit line in the lower container; a fluid supply device configured to supply processing fluid in a supercritical state to the processing space through the first conduit line; and an upper substrate support in the upper container and configured to support a side portion of the substrate, wherein a chamber lower surface of the lower container, in contact with the processing space, comprises a first surface, a first tilted surface, a second surface, a second tilted surface, and a third surface extending sequentially from a center of the processing space, wherein a vertical
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