Slit valve air curtain

Patent metadata

Field	Value
Publication number	US-2025323071-A1
Application number	US-202519253522-A
Country	US
Kind code	A1
Filing date	Jun 27, 2025
Priority date	Nov 8, 2021
Publication date	Oct 16, 2025
Grant date	—

Abstract

Contamination from outgassing during a deposition process is addressed by a series of equipment enhancements, including throttle valves, a dual air curtain, and a residual gas analysis (RGA) monitor. The dual air curtain can be configured to flow a first gas during wafer processing and a second gas during wafer unloading, to re-direct and capture outgassed species. The dual air curtain and the throttle valves can be programmed in an automated feedback control system that utilizes data from the RGA monitor.

First claim

What is claimed is:

1 . A method, comprising:
loading a wafer into a buffer chamber; transferring the wafer from the buffer chamber to a process chamber comprising a slit valve, a pump, and a dual air curtain disposed between the slit valve and the pump; processing the wafer in the process chamber; and transferring the wafer from the process chamber to the buffer chamber.

2 . The method of claim 1 , wherein processing the wafer comprises flowing a first inert gas through the dual air curtain while the slit valve is closed.

3 . The method of claim 1 , wherein transferring the wafer comprises flowing a second inert gas through the dual air curtain while the slit valve is open.

4 . The method of claim 1 , further comprising conducting in-situ measurements in the buffer chamber using a residual gas analyzer (RGA).

5 . The method of claim 4 , further comprising controlling a pressure of the buffer chamber based on the in-situ measurements.

6 . The method of claim 4 , further comprising controlling a pressure of the process chamber based on the in-situ measurements.

7 . The method of claim 4 , further comprising adjusting a flow rate of the dual air curtain based on results of the in-situ measurements.

8 . The method of claim 1 , further comprising separating the process chamber from the buffer chamber with a region of laminar flow produced by the dual air curtain.

9 . The method of claim 1 , further comprising directing, with the dual air curtain, a reaction product from the process chamber towards the pump.

10 . The method of claim 1 , wherein loading the wafer comprises setting the buffer chamber to a pressure of about 250 mTorr.

11 . A method, comprising:
detecting a level of contaminants in a buffer chamber using an in-situ residual gas analyzer (RGA) monitor; collecting data from a tool server; analyzing the level of contaminants and the data from the tool server to determine one or more adjustment values; and in response to the level of contaminants being above a threshold, adjusting relative flow rates of different inert gases flowing through a dual air curtain based on the one or more adjustment values.

12 . The method of claim 11 , further comprising adjusting a buffer chamber throttle valve setting based on the adjustment values.

13 . The method of claim 11 , further comprising adjusting a throttle valve setting in a vacuum chamber based on the adjustment values.

14 . The method of claim 11 , wherein the semiconductor processing equipment set is equipped with multiple processing chambers, and data from the RGA monitor is used to determine in which processing chambers to make equipment adjustments.

15 . The method of claim 11 , wherein in response to the level of contaminants being below the threshold, maintaining the relative flow rates of different gases flowing through the dual air curtain and proceeding with subsequent RGA measurements at predetermined time intervals.

16 . The method of claim 11 , further comprising storing, on a tool server, information associated with the level of contaminants at predetermined time intervals.

17 . A method, comprising:
loading a wafer into a buffer chamber; conducting in-situ measurements in the buffer chamber using a residual gas analyzer (RGA) monitor; controlling a pressure of the buffer chamber based on the in-situ measurements; transferring the wafer from the buffer chamber to a first process chamber through a first dual air curtain; processing the wafer in the first process chamber; transferring the wafer from the first process chamber to the buffer chamber; and transferring the wafer from the buffer chamber to a second process chamber through a second dual air curtain.

18 . The method of claim 17 , further comprising separating the first process chamber from the buffer chamber with a first region of laminar flow produced by the first dual air curtain, and separating the second process chamber from the buffer chamber with a second region of laminar flow produced by the second dual air curtain.

19 . The method of claim 17 , further comprising controlling a pressure of the process chamber based on the in-situ measurements.

20 . The method of claim 17 , wherein loading the wafer comprises setting the buffer chamber to a pressure of about 250 mTorr.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Xu jia-wei
• Tseng Yin-Bin
• Hsu Kai-Shiung
• Wu Chun-Sheng

Classifications

• H10P72/0454 Primary

  surrounding a central transfer chamber · CPC title

• H10P72/06

  Apparatus for monitoring, sorting, marking, testing or measuring · CPC title

• H10P72/0471

  comprising at least one ion or electron beam chamber · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title