Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2025279303-A1
Application number	US-202418991288-A
Country	US
Kind code	A1
Filing date	Dec 20, 2024
Priority date	Mar 1, 2024
Publication date	Sep 4, 2025
Grant date	—

Abstract

A method of manufacturing a semiconductor device includes a step of performing processing and a step of transporting. In the step of performing processing, processing for forming a semiconductor element is performed on a semiconductor substrate made from silicon carbide and having a diameter W of 200 mm or more. In the step of transporting, at least one of before and after processing, a semiconductor substrate is accommodated and transported in a FOUP, which is a transport carrier capable of accommodating a maximum of 25 semiconductor substrates.

First claim

What is claimed is:

1 . A method of manufacturing a semiconductor device, the method comprising:
a step of preparing a semiconductor substrate made from silicon carbide and having a diameter W of 200 mm or more; a step of performing processing for forming a semiconductor element on the semiconductor substrate; and a step of accommodating and transporting the semiconductor substrate in a FOUP that is a transport carrier capable of accommodating a maximum of 25 of the semiconductor substrates at least one of before and after the processing.

2 . The method of manufacturing a semiconductor device according to claim 1 , wherein
the processing includes at least one of: a step of forming a plurality of impurity regions in the semiconductor substrate; a step of forming a protective film on a first main surface of the semiconductor substrate; and a step of grinding a second main surface opposite to the first main surface of the semiconductor substrate after the protective film is formed.

3 . The method of manufacturing a semiconductor device according to claim 2 , wherein
the protective film is a glass plate.

4 . The method of manufacturing a semiconductor device according to claim 2 , wherein
the protective film is tape.

5 . The method of manufacturing a semiconductor device according to claim 1 , wherein
the FOUP includes: a housing having an opening portion that opens toward a first direction and through which the semiconductor substrate is taken in and out; a partition portion connected to an inside of the housing and capable of partitioning and accommodating an outer peripheral portion of a plurality of the semiconductor substrates up to 25 arranged at an interval of 10 mm in a second direction orthogonal to the first direction; and a plurality of support points protruding from the partition portion in the second direction and capable of supporting each of the plurality of semiconductor substrates accommodated in the partition portion along the second direction, when viewed from the second direction, an angle formed by a direction from a center of the semiconductor substrate accommodated in the partition portion toward the support point closest to the opening portion among the plurality of support points and a third direction orthogonal to the first direction and the second direction is 13° or more and 46° or less, W−10 mm<W′<W holds for a diameter W′ of an effective region of the semiconductor substrate, and a distance in the third direction between support points capable of supporting the semiconductor substrate among the plurality of support points is larger than W×cos 46° mm and less than W×cos 13° mm.

6 . The method of manufacturing a semiconductor device according to claim 5 , wherein
the partition portion includes a first partition portion and a second partition portion located on a side opposite to the opening portion with respect to the first partition portion, and the support point closest to the opening portion among the plurality of support points protrudes from the first partition portion, and the support point farthest from the opening portion among the plurality of support points protrudes from the second partition portion.

7 . The method of manufacturing a semiconductor device according to claim 5 , wherein
an angle formed by the third direction and a direction from a center of the semiconductor substrate accommodated in the partition portion toward the support point farthest from the opening portion among the plurality of support points when viewed from the second direction is 13° or more and 46° or less.

8 . The method of manufacturing a semiconductor device according to claim 5 , wherein
a support point closest to the opening portion among the plurality of support points is higher in the second direction than the support point farthest from the opening portion among the plurality of support points.

9 . The method of manufacturing a semiconductor device according to claim 5 , wherein
a tip of a first set of the support points among the plurality of support points is higher than a tip of a second set of the support points further on an inner side than the first set of the support points among the plurality of support points when viewed from the first direction.

10 . The method of manufacturing a semiconductor device according to claim 5 , wherein
the plurality of support points are in surface contact with the semiconductor substrate accommodated in the partition portion.

11 . The method of manufacturing a semiconductor device according to claim 5 , wherein
the partition portion is replaceable.

Assignees

• Mitsubishi Electric Corp

Inventors

• Mikami Kazuaki
• Nakamura Shotaro
• Tsuchiya Tsuyoshi
• Yasui Satoshi
• Konishi Yasuo

Classifications

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P72/1921 Primary

  characterised by substrate supports · CPC title

• H10P72/18

  characterised by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports · CPC title

• H10P72/3408

  Docking arrangements · CPC title