Light-emitting device, spectroscope, and method for producing light-emitting member

Patent metadata

Field	Value
Publication number	US-2025275316-A1
Application number	US-202318858287-A
Country	US
Kind code	A1
Filing date	Feb 15, 2023
Priority date	Apr 21, 2022
Publication date	Aug 28, 2025
Grant date	—

Abstract

A light-emitting device, a spectroscope, and a method for producing a light-emitting member are provided. A light-emitting device including: a light-emitting element configured to emit first light; a light-emitting member disposed on a light emission side of the light-emitting element and including a resin and a light-emitting material, the light-emitting material being configured to absorb the first light and configured to emit second light having an emission peak wavelength from 800 nm to 1100 nm; and an optical thin film disposed on a light emission side of the light-emitting member and configured to reflect the first light and transmit the second light. In an emission spectrum of the light-emitting device, a first integrated value ratio Ib/Ia that is an integrated value Ib of emission intensity at a wavelength in a range from 550 nm to 600 nm with respect to an integrated value Ia of emission intensity at a wavelength in a range from 200 nm to less than 550 nm is in a range from 0 to 0.05, and a second integrated value ratio Ic/Ia that is an integrated value Ic of emission intensity at a wavelength in a range from 800 nm to 1100 nm with respect to the integrated value Ia is in a range from 0.75 to 30.

First claim

What is claimed is:

1 .- 26 . (canceled)

27 . A light-emitting device comprising:
a light-emitting element configured to emit first light having an emission peak wavelength in a range of 200 nm to 550 nm; a light-emitting member comprising a resin and a light-emitting material disposed on a light emission side of the light-emitting element and configured to absorb at least part of the first light, the light-emitting material being configured to emit second light having an emission peak wavelength in a range of 780 nm to 1100 nm; and an optical thin film disposed on a light emission side of the light-emitting member and configured to reflect the first light and transmit the second light, wherein in an emission spectrum of the light-emitting device, a first integrated value ratio Ib/Ia of an integrated value Ib of emission intensity at a wavelength in a range of 550 nm to 600 nm with respect to an integrated value Ia of emission intensity at a wavelength in a range of 200 nm to less than 550 nm is in a range of 0 to 0.05, and a second integrated value ratio Ic/Ia that is an integrated value Ic of emission intensity at a wavelength in a range of 800 nm to 1100 nm with respect to the integrated value Ia is in a range of 0.75 to 30.

28 . The light-emitting device according to claim 27 , further comprising:
a light-transmissive member on the light emission side of the light-emitting member from which the second light exits, wherein the optical thin film is provided on one of an incident side of the light-transmissive member on which the second light is incident and a light emission side of the light-transmissive member from which the second light exits.

29 . The light-emitting device according to claim 27 , wherein the optical thin film is a dielectric multilayer film.

30 . The light-emitting device according to claim 27 , wherein the light-emitting material comprises a phosphor.

31 . The light-emitting device according to claim 30 , wherein the phosphor comprises an oxide phosphor having a composition represented by the following formula (I).
(Mg 1-t1 M 1 t1 ) u1 (Ga 1-v1-x1-y1 M 2 v1 ) 2 O w1 :Cr x1 ,M 3 y1   (I)
wherein M 1 is at least one element selected from the group consisting of Ca, Sr, Ba, Ni, and Zn, M 2 is at least one element selected from the group consisting of B, Al, In, and Sc, M 3 is at least one element selected from the group consisting of Eu, Ce, Tb, Pr, Nd, Sm, Yb, Ho, Er, Tm, and Mn, and t1, u1, v1, w1, x1, and y1 satisfy 0≤t1≤0.8, 0.7≤u1≤1.3, 0≤v1≤0.8, 3.7≤w1≤4.3, 0.02<x1≤0.3, 0≤y1≤0.2, and y1<x1.

32 . A light-emitting device comprising:
a light-emitting element configured to emit first light having an emission peak wavelength in a range of 200 nm to 550 nm; and a light-emitting member disposed on a light emission side of the light-emitting element and comprising a resin and a light-emitting material, wherein the light-emitting material is configured to absorb at least part of the first light and configured to emit second light having an emission peak wavelength in a range of 780 nm to 1100 nm, the light-emitting member contains the light-emitting material in a range of 250 parts by mass to 500 parts by mass with respect to 100 parts by mass of the resin, and in an emission spectrum of the light-emitting device, a first integrated value ratio Ib/Ia that is an integrated value Ib of emission intensity at a wavelength in a range of 550 nm to 600 nm with respect to an integrated value Ia of emission intensity at a wavelength in a range of 200 nm to less than 550 nm is in a range of 0 to 0.05, and a second integrated value ratio Ic/Ia that is an integrated value Ic of emission intensity at a wavelength in a range of 800 nm to 1100 nm with respect to the integrated value Ia is in a range of 0.75 to 30.

33 . The light-emitting device according to claim 32 , wherein the light-emitting member comprises a scattering agent in an amount that is 1.0 mass % to 5.0 mass % with respect to a total amount of the light-emitting member.

34 . The light-emitting device according to claim 32 , further comprising an optical thin film disposed on a light emission side of the light-emitting member and configured to reflect the first light and transmit the second light.

35 . The light-emitting device according to claim 32 , further comprising a light-transmissive member on a light emission side of the light-emitting member from which the second light exits.

36 . The light-emitting device according to claim 34 , wherein the optical thin film is a dielectric multilayer film.

37 . The light-emitting device according to claim 32 , wherein the light-emitting material comprises a phosphor.

38 . The light-emitting device according to claim 33 , wherein the phosphor comprises an oxide phosphor having a composition represented by the following formula (I).
(Mg 1-t1 M 1 t1 ) u1 (Ga 1-v1-x1-y1 M 2 v1 ) 2 O w1 :Cr x1 ,M 3 y1   (I)
wherein M 1 is at least one element selected from the group consisting of Ca, Sr, Ba, Ni, and Zn, M 2 is at least one element selected from the group consisting of B, Al, In, and Sc, M 3 is at least one element selected from the group consisting of Eu, Ce, Tb, Pr, Nd, Sm, Yb, Ho, Er, Tm, and Mn, and t1, u1, v1, w1, x1, and y1 satisfy 0≤t1≤0.8, 0.7≤u1≤1.3, 0≤v1≤0.8, 3.7≤w1≤4.3, 0.02<x1≤0.3, 0≤y1≤0.2, and y1<x1.

39 . A light-emitting device comprising:
a light-emitting element configured to emit first light having an emission peak wavelength in a range of 200 nm to 550 nm; and a light-emitting member disposed on a light emission side of the light-emitting element and comprising a resin and a light-emitting material, wherein, the light-emitting material is configured to absorb at least part of the first light and configured to emit second light having an emission peak wavelength in a range of 780 nm to 1100 nm, and in an emission spectrum of the light-emitting element, a third integrated value ratio Ic/Ia′ that is an integrated value Ic of emission intensity at a wavelength in a range of 800 nm to 1100 nm in an emission spectrum of the light-emitting device with respect to an integrated value Ia′ of emission intensity at a wavelength in a range of 200 nm to less than 550 nm is 0.13 or more.

40 . The light-emitting device according to claim 39 , further comprising an optical thin film disposed on a light emission side of the light-emitting member and configured to reflect the first light and transmit the second light.

41 . The light-emitting device according to claim 39 , wherein the light-emitting member comprises the light-emitting material in an amount that is 250 parts by mass to 500 parts by mass with respect to 100 parts by mass of the resin.

42 . The light-emitting device according to claim 39 , wherein the light-emitting member comprises a scattering agent in an amount that is 1.0 mass % to 5.0 mass % with respect to a total amount of the light-emitting member.

43 . The light-emitting device according to claim 39 , further comprising a light-transmissive member on a light emission side of the light-emitting member from which the second light exits.

44 . The light-emitting device according to claim 40 , wherein the optical thin film is a dielectric multilayer film.

45 . The light-emitting device according to claim 39 , wherein the light-emitting material comprises a phosphor.

46 . The light-emitting device according to claim 39 , wherein the phosphor comprises an oxide phosphor having a composition represe

Assignees

• Nichia Corp

Inventors

• Sano Yukiko
• Kijima Naoto
• Murazaki Yoshinori

Classifications

• H10H20/841

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H20/851

  Wavelength conversion means · CPC title

• C09K11/02 Primary

  Use of particular materials as binders, particle coatings or suspension media therefor · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title