Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device

Patent metadata

Field	Value
Publication number	US-2025275313-A1
Application number	US-202519197920-A
Country	US
Kind code	A1
Filing date	May 2, 2025
Priority date	Feb 28, 2017
Publication date	Aug 28, 2025
Grant date	—

Abstract

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

First claim

What is claimed is:

1 . Semiconductor nanoparticles, comprising:
silver (Ag), indium (In), gallium (Ga), and sulfur(S),
wherein the semiconductor nanoparticles have chalcopyrite type crystal structure,
wherein the semiconductor nanoparticles emit light having an emission peak with a wavelength in a range from 500 nm to less than 590 nm upon irradiation of light, and
wherein the semiconductor nanoparticles show an absorption spectrum with an exciton peak in a range of from 450 nm to less than 590 nm.

2 . The semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is from 0.2 to 0.9.

3 . The semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.55.

4 . The semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.3 to 0.55, and a ratio of a number of Ga atoms to a total number of In and Ga atoms is from 0.5 to 0.9.

5 . The semiconductor nanoparticles according to claim 1 , comprising a core and a semiconductor material having a greater band gap energy than the core.

6 . The semiconductor nanoparticles according to claim 5 , wherein the semiconductor material contains a group 13 element in a periodic table of chemical elements and a group 16 element in the periodic table of chemical elements.

7 . The semiconductor nanoparticles according to claim 6 , wherein the semiconductor material contains at least Ga as the group 13 element.

8 . The semiconductor nanoparticles according to claim 6 , wherein the semiconductor material contains at least S as the group 16 element.

9 . A light conversion member comprising the semiconductor nanoparticles according to claim 1 .

10 . A light conversion member, comprising:
the semiconductor nanoparticles according to claim 1 ; and at least one selected from the group consisting of semiconductor nanoparticles other than the semiconductor nanoparticles according to claim 1 , an organic fluorescent material, and an inorganic fluorescent material.

11 . The light conversion member according to claim 9 , wherein the light conversion member is a sheet member or a plate-like member.

12 . A light-emitting device comprising:
the light conversion member according to claim 9 ; and a semiconductor light-emitting element having a peak wavelength in a range of from 400 nm to 490 nm.

13 . A liquid crystal display comprising the light-emitting device according to claim 12 .

Assignees

• National Univ Corporation Tokai National Higher Education And Research System
• Univ Osaka
• Nichia Corp

Inventors

• Torimoto Tsukasa
• Kameyama Tatsuya
• Kishi Marino
• Miyamae Chie
• Kuwabata Susumu
• Uematsu Taro
• Oyamatsu Daisuke
• Niki Kenta

Classifications

• H10H20/8515

  not being in contact with the bodies · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• C09K11/62

  containing gallium, indium or thallium · CPC title

• C09K11/02 Primary

  Use of particular materials as binders, particle coatings or suspension media therefor · CPC title