Light-emitting device, light-emitting apparatus, electronic device, and lighting device

Patent metadata

Field	Value
Publication number	US-2025270442-A1
Application number	US-202519202076-A
Country	US
Kind code	A1
Filing date	May 8, 2025
Priority date	Apr 26, 2019
Publication date	Aug 28, 2025
Grant date	—

Abstract

A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with a favorable lifetime is provided. A light-emitting device with low driving voltage is provided. A light-emitting device with favorable display quality is provided. A light-emitting device that includes an anode, a cathode, and an EL layer positioned between the anode and the cathode, in which the EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer; in which the electron-transport layer contains an electron-transport material and an alkali metal, an alkaline earth metal, a compound of an alkali metal or an alkaline earth metal, or a complex thereof; and in which the resistivity of the hole-injection layer is within a certain range, is provided.

First claim

1 . A light-emitting device comprising:
an anode; a cathode; and an EL layer between the anode and the cathode, wherein the EL layer comprises a hole-injection layer, a light-emitting layer, and an electron-transport layer, wherein the electron-transport layer comprises an electron-transport material and at least one of an alkali metal, an alkaline earth metal, a compound of an alkali metal or an alkaline earth metal, and a complex of an alkali metal or an alkaline earth metal, wherein the hole-injection layer comprises a first organic compound, and wherein a resistivity of a film of the hole-injection layer is higher than or equal to 1×10 5 [Ω·cm] and lower than or equal to 1×10 7 [Ω·cm].

2 . The light-emitting device according to claim 1 ,
wherein the electron-transport material is an organic compound having an anthracene skeleton.

3 . The light-emitting device according to claim 1 ,
wherein an electron mobility of the electron-transport layer in the case where the square root of the electric field strength [V/cm] is 600 is higher than or equal to 1×10 −7 cm 2 /Vs and lower than or equal to 5×10 −5 cm 2 /Vs.

4 . The light-emitting device according to claim 1 ,
wherein the electron-transport layer comprises a first region and a second region, wherein the first region is positioned between the light-emitting layer and the second region, and wherein a concentration of at least one of the alkali metal, the alkaline earth metal, the compound of an alkali metal or an alkaline earth metal, and the complex of an alkali metal or an alkaline earth metal is different between the first region and the second region.

5 . The light-emitting device according to claim 1 ,
wherein the first organic compound has a HOMO level of higher than or equal to −5.7 eV and lower than or equal to −5.4 eV.

6 . The light-emitting device according to claim 1 ,
wherein an electron mobility of the first organic compound in the case where the square root of the electric field strength [V/cm] is 600 is lower than or equal to 1×10 −3 cm 2 /Vs.

7 . The light-emitting device according to claim 1 ,
wherein the EL layer comprises a hole-transport layer between the hole-injection layer and the light-emitting layer.

8 . The light-emitting device according to claim 7 ,
wherein the hole-transport layer has a two-layer structure of a first hole-transport layer positioned on the hole-injection layer side and a second hole-transport layer positioned on the light-emitting layer side.

9 . The light-emitting device according to claim 1 ,
wherein the light-emitting layer contains a host material and an emission center material, and wherein an electron mobility of the electron-transport material is lower than an electron mobility of the host material.

10 . The light-emitting device according to claim 9 ,
wherein the emission center material exhibits fluorescence.

11 . A light-emitting device comprising:
an anode; a cathode; and an EL layer between the anode and the cathode, wherein the EL layer comprises a hole-injection layer, a light-emitting layer, and an electron-transport layer, wherein the electron-transport layer comprises an electron-transport material and at least one of an alkali metal, an alkaline earth metal, a compound of an alkali metal or an alkaline earth metal, and a complex of an alkali metal or an alkaline earth metal, wherein the hole-injection layer comprises a first organic compound and a second organic compound exhibiting an electron-accepting property with respect to the first organic compound, and wherein a resistivity of a film included in the hole-injection layer is higher than or equal to 1×10 5 [Ω·cm] and lower than or equal to 1×10 7 [Ω·cm].

12 . The light-emitting device according to claim 11 ,
wherein the electron-transport material is an organic compound having an anthracene skeleton.

13 . The light-emitting device according to claim 11 ,
wherein an electron mobility of the electron-transport layer in the case where the square root of the electric field strength [V/cm] is 600 is higher than or equal to 1×10 −7 cm 2 /Vs and lower than or equal to 5×10 −5 cm 2 /Vs.

14 . The light-emitting device according to claim 11 ,
wherein the electron-transport layer comprises a first region and a second region, wherein the first region is positioned between the light-emitting layer and the second region, and wherein a concentration of at least one of the alkali metal, the alkaline earth metal, the compound of an alkali metal or an alkaline earth metal, and the complex of an alkali metal or an alkaline earth metal is different between the first region and the second region.

15 . The light-emitting device according to claim 11 ,
wherein the first organic compound has a HOMO level of higher than or equal to −5.7 eV and lower than or equal to −5.4 eV.

16 . The light-emitting device according to claim 11 ,
wherein an electron mobility of the first organic compound in the case where the square root of the electric field strength [V/cm] is 600 is lower than or equal to 1×10 −3 cm 2 /Vs.

17 . The light-emitting device according to claim 11 ,
wherein the EL layer comprises a hole-transport layer between the hole-injection layer and the light-emitting layer.

18 . The light-emitting device according to claim 17 ,
wherein the hole-transport layer has a two-layer structure of a first hole-transport layer positioned on the hole-injection layer side and a second hole-transport layer positioned on the light-emitting layer side.

19 . The light-emitting device according to claim 11 ,
wherein the light-emitting layer contains a host material and an emission center material, and wherein an electron mobility of the electron-transport material is lower than an electron mobility of the host material.

20 . The light-emitting device according to claim 19 ,
wherein the emission center material exhibits fluorescence.

Assignees

• Semiconductor Energy Lab

Inventors

• Okuyama Takumu
• Seo Hiromi
• Hashimoto Naoaki
• Takita Yusuke
• Suzuki Tsunenori
• Seo Satoshi

Classifications

• H10K59/87

  Passivation; Containers; Encapsulations · CPC title

• H10K50/17

  Carrier injection layers · CPC title

• H10K85/6574

  comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes · CPC title

• H10K50/16

  Electron transporting layers · CPC title

• H10K85/6572

  comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole · CPC title