Power storage device and electronic device
US-2016372717-A1 · Dec 22, 2016 · US
Superconducting device with multiple wiring
US2025259766A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025259766-A1 |
| Application number | US-202418437196-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 8, 2024 |
| Priority date | Feb 8, 2024 |
| Publication date | Aug 14, 2025 |
| Grant date | — |
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- Title
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Abstract
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A superconducting device includes a first layer, an intermediate layer over the first layer, and a second layer over the intermediate layer. The intermediate layer is configured to decrease strain in the first layer.
First claim
Opening claim text (preview).
What is claimed is: 1 . A superconducting device, comprising: a first layer; an intermediate layer over the first layer; and a second layer over the intermediate layer, wherein the intermediate layer is configured to decrease strain in the first layer. 2 . The superconducting device of claim 1 , wherein the first layer is a metallic layer. 3 . The superconducting device of claim 2 , wherein the metallic layer includes Niobium (Nb). 4 . The superconducting device of claim 1 , wherein the second layer includes silicon oxide. 5 . The superconducting device of claim 1 , wherein the intermediate layer is a silicon-rich layer. 6 . A method for fabricating a superconducting device, the method comprising: forming a first layer; forming an intermediate layer over the first layer; and forming a second layer over the intermediate layer, wherein the intermediate layer is configured to decrease strain in the first layer. 7 . The method of claim 6 , wherein forming the first layer comprises forming a metallic layer, and wherein the metallic layer includes Niobium (Nb). 8 . The method of claim 6 , wherein forming the intermediate layer comprises forming a silicon-rich layer. 9 . The method of claim 8 , further comprising: flowing a silane gas into a vacuum chamber; and forming the silicon-rich layer over the first layer, wherein the silane gas is flown into the vacuum chamber at a flow rate of about 260 standard cubic centimeter (sccm), and wherein the vacuum chamber is at a temperature of about 400 degrees Celsius. 10 . The method of claim 9 , wherein a pressure of the vacuum chamber is about 2.7 Torr, and wherein the silane gas is flown for about 30 seconds to about 120 seconds into the vacuum chamber. 11 . The method of claim 6 , wherein forming the second layer comprises forming a silicon oxide layer. 12 . The method of claim 11 , further comprising: simultaneously flowing a silane gas and a nitrous oxide gas into a vacuum chamber; igniting a plasma in the vacuum chamber; and forming the second layer over the intermediate layer. 13 . The method of claim 12 , wherein the silane gas is flown into the vacuum chamber at a first flow rate of about 260 standard cubic centimeter (sccm), and the nitrous oxide gas is flown into the vacuum chamber at a second flow rate of about 3900 sccm, wherein the vacuum chamber is at a temperature of about 400 degrees Celsius, and wherein the plasma is ignited at about 300 Watts. 14 . The method of claim 12 , wherein a pressure of the vacuum chamber is about 2.7 Torr. 15 . The method of claim 6 , wherein forming the second layer is performed via a plasma-enhanced chemical vapor deposition (PECVD) technique. 16 . A superconducting device, comprising: a first layer; an intermediate layer over the first layer; and a second layer over the intermediate layer, wherein the intermediate layer is configured to increase a critical transition temperature of the first layer. 17 . The superconducting device of claim 16 , wherein the first layer is a metallic layer. 18 . The superconducting device of claim 17 , wherein the metallic layer includes Niobium (Nb). 19 . The superconducting device of claim 16 , wherein the second layer includes silicon oxide. 20 . The superconducting device of claim 16 , wherein the intermediate layer is a silicon-rich layer.
Assignees
Inventors
Classifications
Graded interfaces · CPC title
Silicon dioxide · CPC title
Deposition of silicon only · CPC title
characterised by the deposition of metallic material · CPC title
Films or wires on bases or cores · CPC title
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Frequently asked questions
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- What does patent US2025259766A1 cover?
- A superconducting device includes a first layer, an intermediate layer over the first layer, and a second layer over the intermediate layer. The intermediate layer is configured to decrease strain in the first layer.
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H01J37/32816. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Aug 14 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).