Negative electrode active material, manufacturing method of negative electrode active material, negative electrode composition, negative electrode for lithium secondary battery including same, and lithium secondary battery including negative electrode

Patent metadata

Field	Value
Publication number	US-2025253324-A1
Application number	US-202519044345-A
Country	US
Kind code	A1
Filing date	Feb 3, 2025
Priority date	Feb 2, 2024
Publication date	Aug 7, 2025
Grant date	—

Abstract

A negative electrode active material includes a silicon-based active material having a crystal grain size of about 300 nm or less. The silicon-based active material has a value of about 2.00 or less as defined by Equation 1 below. The silicon-based active material includes SiOx (x=0) and at least one selected from SiOx (0<x<2), and includes about 70 parts by weight or more of the SiOx (x=0) based on 100 parts by weight of the silicon-based active material.(D90−D10)/D50  [Equation 1]In Equation 1, D90, D10, and D50 represent diameters of particles corresponding to 90%, 10%, and 50% by volume in a size distribution, respectively.

First claim

What is claimed is:

1 . A negative electrode active material comprising:
a silicon-based active material having a crystal grain size of about 300 nm or less, wherein the silicon-based active material has a value of about 2.00 or less as defined by Equation 1 below, the silicon-based active material includes SiO x (x=0) and at least one selected from SiO x (0<x<2), and includes about 70 parts by weight or more of the SiO x (x=0) based on 100 parts by weight of the silicon-based active material:

(

D
⁢
90

-

D
⁢
10

)

/
D
⁢
50

[

Equation
⁢

1

]

wherein D90, D10, and D50 represent diameters of particles corresponding to 90%, 10%, and 50% by volume in a size distribution, respectively.

2 . The negative electrode active material according to claim 1 , wherein the crystal grain size of SiO x (x=0) is about 300 nm or less.

3 . The negative electrode active material according to claim 1 , wherein the silicon-based active material includes a crystal structure having a crystal grain distribution of about 1 nm to 300 nm.

4 . The negative electrode active material according to claim 1 , wherein the average particle diameter (D50) of the silicon-based active material is about 1 μm or more and 9 μm or less.

5 . The negative electrode active material according to claim 1 , wherein the crystal grain size of the silicon-based active material is about 1 nm or more and 300 nm or less, and
the average particle diameter (D50) of the silicon-based active material is about 3 μm or more and 8 μm or less.

6 . A method of preparing a negative electrode active material, the method comprising:
melting a silicon raw material; and cooling the melted silicon raw material to form a silicon-based active material, wherein the cooling includes spraying the melted silicon raw material onto an ultra-vibration low-temperature substrate, the silicon-based active material has a crystal grain size of about 300 nm or less, and the silicon-based active material has a value of about 2.00 or less as defined by Equation 1:

(

D
⁢
90

-

D
⁢
10

)

/
D
⁢
50

[

Equation
⁢

1

]

wherein D90, D10, and D50 represent diameters of particles corresponding to 90%, 10%, and 50% by volume in a size distribution, respectively.

7 . The method according to claim 6 , wherein the ultra-vibration low-temperature substrate has a vibration frequency of about 1 kHz or more and 1500 kHz or less.

8 . The method according to claim 6 , wherein a cooling temperature in the cooling is about 20° C. or less.

9 . A negative electrode composition comprising:
the negative electrode active material according to claim 1 ; a negative electrode conductive material; and negative electrode binder.

10 . The negative electrode composition according to claim 9 , wherein a content of the negative electrode active material is at least about 40 parts by weight based on 100 parts by weight of the negative electrode composition.

11 . The negative electrode composition according to claim 9 , wherein the negative electrode conductive material includes a surface-type conductive material and a line-type conductive material.

12 . The negative electrode composition according to claim 11 , wherein the negative conductive material includes about 80 parts by weight or more and 99.9 parts by weight or less of the surface-type conductive material and about 0.1 parts by weight or more and 20 parts by weight or less of the line-type conductive material based on 100 parts by weight of the negative conductive material.

13 . The negative electrode composition according to claim 9 , wherein a content of the negative electrode conductive material is about 20 parts by weight or less based on 100 parts by weight of the negative electrode composition.

14 . A negative electrode for a lithium secondary battery, comprising:
a negative electrode current collector layer, and a negative electrode active material layer provided on one or both sides of the negative electrode current collector layer, wherein the negative electrode active material layer includes the negative electrode composition according to claim 9 or a cured product thereof.

15 . The negative electrode for a lithium secondary battery, according to claim 14 , wherein a thickness of the negative electrode current collector layer is about 1 μm or more and 100 μm or less, and
a thickness of the negative electrode active material layer is about 5 μm or more and 500 μm or less.

16 . A lithium secondary battery comprising:
a positive electrode; the negative electrode for a lithium secondary battery according to claim 14 ; a separator provided between the positive electrode and the negative electrode; and an electrolyte.

Assignees

• Lg Energy Solution Ltd

Inventors

• Kim Dohyeun
• Kim Donghyuk
• Lee Yong Ju
• Hyun Jaeik

Classifications

• Y02E60/10

  Energy storage using batteries · CPC title

• H01M2004/027

  Negative electrodes · CPC title

• C01P2004/61

  Micrometer sized, i.e. from 1-100 micrometer · CPC title

• C01P2004/64

  Nanometer sized, i.e. from 1-100 nanometer · CPC title

• C01B33/183

  by oxidation or hydrolysis in the vapour phase of silicon compounds such as halides, trichlorosilane, monosilane · CPC title