Protection layer for oled sub-pixels

Patent metadata

Field	Value
Publication number	US-2025248281-A1
Application number	US-202519060243-A
Country	US
Kind code	A1
Filing date	Feb 21, 2025
Priority date	Jan 30, 2024
Publication date	Jul 31, 2025
Grant date	—

Abstract

Embodiments described herein relate to a sub-pixel. In one or more embodiments, a sub-pixel includes a substrate and overhang structures. The overhang structures include an extension disposed past a sidewall of the overhang structures. The sub-pixel further includes an anode disposed over the substrate, an inorganic layer disposed under each extension of the overhang structures, and organic light-emitting diode (OLED) material disposed over the anode. The OLED material is disposed between the inorganic layer under each extension of the overhang structures; The sub-pixel further includes a cathode disposed over the OLED material.

First claim

What is claimed is:

1 . A method, comprising:
depositing an inorganic layer over a substrate; forming overhang structures, the overhang structures including an extension disposed past a sidewall of the overhang structures; removing portions of the inorganic layer, such that the inorganic layer is to be disposed under an extension of overhang structures; depositing an organic light-emitting diode (OLED) material over the substrate, the OLED is disposed over an anode; and depositing a cathode, wherein the cathode is disposed under each extension of the overhang structures.

2 . The method of claim 1 , further comprising:
depositing a pixel isolation layer over the substrate; and removing portions of the pixel isolation layer, such that pixel isolation structures are to be disposed under a first portion of the overhang structures.

3 . The method of claim 2 , wherein the inorganic layer is deposited prior to the pixel isolation layer.

4 . The method of claim 2 , wherein the pixel isolation layer is deposited prior to the inorganic layer.

5 . The method of claim 1 , wherein the portions of the inorganic layer are removed prior to forming the overhang structures.

6 . The method of claim 1 , wherein the portions of the inorganic layer are removed after forming the overhang structures.

7 . The method of claim 1 , wherein the inorganic layer comprises an inorganic material, wherein the inorganic material comprises a metal oxide containing-material, a silicon containing-material, or a combination thereof.

8 . The method of claim 7 , wherein the inorganic material includes aluminum oxide, silicon nitride, or a combination thereof.

9 . A method, comprising:
depositing an inorganic layer over a substrate and a plurality of anodes; forming an overhang structure in-between each anode of the plurality of anodes, the overhang structure including an extension disposed past a sidewall of the overhang structure; removing at least a portion of the inorganic layer disposed over an upper surface of each anode of the plurality of anodes; depositing an organic light-emitting diode (OLED) material over the upper surface of each anode of the plurality of anodes; and depositing a cathode over the OLED material.

10 . The method of claim 9 , further comprising:
depositing a pixel isolation layer over the substrate; and removing portions of the pixel isolation layer, such that pixel isolation structures are to be disposed under a first portion of the overhang structure.

11 . The method of claim 10 , wherein the inorganic layer is deposited prior to the pixel isolation layer.

12 . The method of claim 10 , wherein the pixel isolation layer is deposited prior to the inorganic layer.

13 . The method of claim 9 , wherein the portions of the inorganic layer are removed prior to forming the overhang structure.

14 . The method of claim 9 , wherein the portions of the inorganic layer are removed after forming the overhang structure.

15 . The method of claim 9 , wherein the inorganic layer comprises an inorganic material, wherein the inorganic material comprises a metal oxide containing-material, a silicon containing-material, or a combination thereof.

16 . The method of claim 15 , wherein the inorganic material includes aluminum oxide, silicon nitride, or a combination thereof.

17 . A method, comprising:
depositing an inorganic layer over a substrate, wherein the inorganic layer comprises an inorganic material, the inorganic material comprising a metal oxide containing-material and a silicon containing-material; forming overhang structures, the overhang structures including an extension disposed past a sidewall of the overhang structures; removing portions of the inorganic layer, such that the inorganic layer is to be disposed under an extension of overhang structures; depositing an organic light-emitting diode (OLED) material over the substrate, the OLED is disposed over an anode; and depositing a cathode over the OLED material.

18 . The method of claim 17 , further comprising:
depositing a pixel isolation layer over the substrate; and removing portions of the pixel isolation layer, such that pixel isolation structures are to be disposed under a first portion of the overhang structures.

19 . The method of claim 18 , wherein the inorganic layer is deposited prior to the pixel isolation layer.

20 . The method of claim 18 , wherein the pixel isolation layer is deposited prior to the inorganic layer.

Assignees

• Applied Materials Inc

Inventors

• Lee Jungmin
• Haas Dieter
• MCDANIEL Gregory Max
• Lin Yu-Hsin

Classifications

• H10K59/873 Primary

  Encapsulations · CPC title

• H10K59/1201

  Manufacture or treatment · CPC title

• H10K2102/351

  Thickness · CPC title

• H10K59/122 Primary

  Pixel-defining structures or layers, e.g. banks · CPC title