Reflective electrode for an emitting device

Patent metadata

Field	Value
Publication number	US-2025241093-A1
Application number	US-202218685114-A
Country	US
Kind code	A1
Filing date	Aug 23, 2022
Priority date	Aug 25, 2021
Publication date	Jul 24, 2025
Grant date	—

Abstract

A stacked body, including a reflective electrode layer, an intermediate layer having a MgZnO composition, and a semiconductor layer having an AlGaN composition in this order, where a thickness of the intermediate layer is 1-80 nm. An emitting device containing the stacked body. A method of producing the stacked body.

First claim

1 . A stacked body, comprising:
a reflective electrode layer, an intermediate layer having a MgZnO composition, and a semiconductor layer having an AlGaN composition in this order, wherein a thickness of the intermediate layer is 1-80 nm

2 . The stacked body according to claim 1 , wherein the reflective electrode layer comprises at least one metal selected from the group consisting of Al, Rh, Mo, W, and Cr.

3 . The stacked body according to claim 1 , wherein the intermediate layer comprises an oxide of magnesium and an oxide of zinc.

4 . The stacked body according to claim 1 , wherein the intermediate layer has a MgZnO composition of Mg x Zn y O (x is 0.2 to 0.8, y is 0.8 to 0.2).

5 . (canceled)

6 . A method of producing the stacked body according to claim 1 , comprising depositing the intermediate layer on the semiconductor layer.

7 . The method of producing according to claim 6 , wherein the intermediate layer is formed by sputtering, molecular beam epitaxy (MBE) method, vacuum-deposition, or ion plating.

8 . The method of producing according to claim 6 , wherein a surface temperature of the semiconductor layer at a time of forming the intermediate layer is 20° C. or higher and 600° C. or lower.

9 . The method of producing according to claim 6 , wherein a surface temperature of the semiconductor layer at a time of forming the intermediate layer is 180° C. or higher and 300° C. or lower.

10 . The method of producing according to claim 6 , comprising heat-treating the formed intermediate layer at a temperature of 600° C. or higher.

11 . An emitting device comprising the stacked body according to claim 1 .

12 . The emitting device according to claim 11 , comprising
a stacked structure having a substrate, an n-type contact layer, an emitting layer, and the stacked body in this order, and an electrode layer formed on a part of the n-type contact layer on which the emitting layer is not formed.

13 . The emitting device according to claim 11 , comprising
a stacked structure having a substrate, an n-type contact layer, an emitting layer, a p-type semiconductor layer, and an electrode layer in this order, and an intermediate layer having a MgZnO composition, and a reflective electrode layer on a part of the n-type contact layer on which the emitting layer is not formed in this order, wherein the part of the n-type contact layer, the intermediate layer having a MgZnO composition, and the reflective electrode layer form the stacked body.

14 . The emitting device according to claim 11 , comprising
a stacked structure having a substrate, an n-type contact layer, an emitting layer, and the stacked body in this order, and an intermediate layer having a MgZnO composition and a reflective electrode layer on a part of the n-type contact layer on which the emitting layer is not formed in this order, wherein the part of the n-type contact layer, the intermediate layer having a MgZnO composition, and the reflective electrode layer form the stacked body.

15 . The emitting device according to claim 12 , comprising a p-type semiconductor layer between the emitting layer and the stacked body,
wherein the p-type semiconductor layer and the semiconductor layer of the stacked body form a tunnel junction structure.

Assignees

• Idemitsu Kosan Co
• Toyoda Gosei Kk
• National Univ Corporation Tokai National Higher Education And Research System

Inventors

• Tomai Shigekazu
• Katsumata Satoshi
• Oyama Masashi
• Nagata Kengo
• Matsubara Taichi
• Kushimoto Maki
• Honda Yoshio
• Amano Hiroshi

Classifications

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/811

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/835 Primary

  Reflective materials · CPC title