Ge-BASED INFRARED DETECTOR AND ELECTRONIC DEVICE INCLUDING THE SAME

Patent metadata

Field	Value
Publication number	US-2025228019-A1
Application number	US-202418816626-A
Country	US
Kind code	A1
Filing date	Aug 27, 2024
Priority date	Jan 4, 2024
Publication date	Jul 10, 2025
Grant date	—

Abstract

A germanium (Ge)-based infrared detector and an electronic device including the same are provided. The infrared detector according to an embodiment includes a Ge-based infrared absorption layer provided on a substrate; a first electrode layer provided on the infrared absorption layer; a second electrode layer provided on the infrared absorption layer and spaced apart from the first electrode layer in a first direction; and a first gate electrode layer provided between the first electrode layer and the second electrode layer in the first direction, the first gate electrode layer facing the infrared absorption layer and spaced apart from the infrared absorption layer in a second direction crossing the first direction.

First claim

What is claimed is:

1 . An infrared detector comprising:
a substrate; a germanium (Ge)-based infrared absorption layer provided on the substrate; a first electrode layer provided on the infrared absorption layer; a second electrode layer provided on the infrared absorption layer and spaced apart from the first electrode layer in a first direction; and a first gate electrode layer provided between the first electrode layer and the second electrode layer in the first direction, the first gate electrode layer facing the infrared absorption layer and spaced apart from the infrared absorption layer in a second direction crossing the first direction.

2 . The infrared detector of claim 1 , wherein the infrared absorption layer extends on or below the first electrode layer and the second electrode layer, and the first electrode layer and the second electrode layer directly contact the infrared absorption layer.

3 . The infrared detector of claim 1 , wherein the infrared absorption layer extends on or below the first electrode layer and the second electrode layer,
wherein the infrared absorption layer includes: a first doped layer provided at a position corresponding to the first electrode layer; and a second doped layer provided at a position corresponding to the second electrode layer and spaced apart from the first doped layer, and wherein the first electrode layer is in direct contact with the first doped layer, and the second electrode layer is in direct contact with the second doped layer.

4 . The infrared detector of claim 3 , wherein each of the first doped layer and the second doped layer includes one of an n-type dopant and a p-type dopant.

5 . The infrared detector of claim 1 , wherein each of the first doped layer and the second doped layer has a doping concentration gradient in a direction away from the first gate electrode layer.

6 . The infrared detector of claim 1 , wherein the first gate electrode layer is disposed above or below the infrared absorption layer.

7 . The infrared detector of claim 1 , further comprising a second gate electrode layer, the second gate electrode facing the first gate electrode layer with the infrared absorption layer therebetween and being spaced apart from the infrared absorption layer.

8 . The infrared detector of claim 1 , further comprising a first interlayer material layer between the substrate and the infrared absorption layer,
wherein the first interlayer material layer includes a silicon (Si) layer.

9 . The infrared detector of claim 1 , further comprising a second interlayer material layer on the substrate,
wherein the second interlayer material layer includes a groove, and the infrared absorption layer is provided in the groove.

10 . The infrared detector of claim 9 , wherein the second interlayer material layer includes:
a third doped layer at a position corresponding to the first electrode layer; and a fourth doped layer at a position corresponding to the second electrode layer, and wherein the groove is located between the third doped layer and the fourth doped layer in the first direction, the first electrode layer is in direct contact with the third doped layer, and the second electrode layer is in direct contact with the fourth doped layer.

11 . The infrared detector of claim 10 , wherein the third doped layer and the fourth doped layer are spaced apart from the infrared absorption layer.

12 . The infrared detector of claim 10 , wherein the third doped layer and the fourth doped layer extend toward a lower surface of the second interlayer material layer.

13 . The infrared detector of claim 10 , wherein each of the third doped layer and the fourth doped layer has a doping concentration gradient in a direction away from the first gate electrode layer.

14 . The infrared detector of claim 10 , wherein each of the third doped layer and the fourth doped layer includes one of an n-type dopant and a p-type dopant.

15 . The infrared detector of claim 9 , wherein the first gate electrode layer is disposed above or below the infrared absorption layer.

16 . The infrared detector of claim 9 , further comprising a second gate electrode layer, the second gate electrode layer facing the first gate electrode layer with the infrared absorption layer therebetween and being spaced apart from the infrared absorption layer.

17 . The infrared detector of claim 1 , wherein the infrared absorption layer includes a plurality of infrared absorption layers, the plurality of infrared absorption layers being stacked in a direction perpendicular to the substrate and spaced apart from each other.

18 . The infrared detector of claim 1 , wherein the substrate includes:
a base substrate; and an interlayer insulating layer on the base substrate.

19 . The infrared detector of claim 1 , wherein the substrate is a single layer, the substrate includes a silicon layer or a silicon oxide layer, and the substrate is in direct contact with the infrared absorption layer.

20 . An electronic device comprising:
an infrared detector; and a waveguide connected to the infrared detector, wherein the infrared detector includes: a substrate; a germanium (Ge)-based infrared absorption layer provided on the substrate; a first electrode layer provided on the infrared absorption layer; a second electrode layer provided on the infrared absorption layer and spaced apart from the first electrode layer in a first direction; and a first gate electrode layer provided between the first electrode layer and the second electrode layer in the first direction, the first gate electrode layer facing the infrared absorption layer and spaced apart from the infrared absorption layer in a second direction crossing the first direction, and wherein the infrared detector and the waveguide are connected to each other by a butt coupling method, an evanescent coupling method, or a diffraction grating coupling method.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Kyungsang
• Baik Chanwook
• Yoon Youngzoon

Classifications

• G01J2001/4473

  Phototransistor · CPC title

• H10F77/206

  for devices having potential barriers · CPC title

• H10F30/28

  the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors · CPC title

• G01J1/42 Primary

  using electric radiation detectors (optical or mechanical part G01J1/04; by comparison with a reference light or electric value G01J1/10) · CPC title

• H10F30/282 Primary

  Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors · CPC title