Integrated chip and manufacturing method therefor, and full-color integrated chip and display panel
US-12183868-B2 · Dec 31, 2024 · US
US2025212665A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025212665-A1 |
| Application number | US-202418954314-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 20, 2024 |
| Priority date | Dec 21, 2023 |
| Publication date | Jun 26, 2025 |
| Grant date | — |
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Provided is a light-emitting element including a first electrode, a second electrode facing the first electrode, an emission structure between the first electrode and the second electrode, a first capping layer which is on the second electrode and includes a first compound having a first refractive index of about 1.9 or greater at a wavelength of about 550 nm and a metal dopant having an absorption ratio of about 40% at the wavelength of about 550 nm, and a second capping layer which is on the first capping layer and includes a second compound having second refractive index smaller than the first refractive index, and thus reflectance for external light decrease, thereby exhibiting excellent efficiency characteristics.
Opening claim text (preview).
What is claimed is: 1 . A light-emitting element comprising: a first electrode; a second electrode facing the first electrode; an emission structure between the first electrode and the second electrode; a first capping layer on the second electrode and comprising a first compound having a first refractive index of about 1.9 or greater at a wavelength of about 550 nm and a metal dopant having an absorption ratio of about 40% or more at the wavelength of about 550 nm; and a second capping layer on the first capping layer and comprising a second compound having a second refractive index smaller than the first refractive index. 2 . The light-emitting element of claim 1 , wherein a difference between the first refractive index and the second refractive index is about 0.2 or greater. 3 . The light-emitting element of claim 2 , wherein the second refractive index is about 1.4 to about 1.7. 4 . The light-emitting element of claim 1 , wherein the metal dopant is an alkali metal, an alkaline earth metal, a lanthanide metal, and/or a transition metal. 5 . The light-emitting element of claim 1 , wherein the metal dopant is lithium (Li) and/or ytterbium (Yb). 6 . The light-emitting element of claim 1 , wherein a volume ratio of the first compound to the metal dopant in the first capping layer is about 99:1 to about 95:5. 7 . The light-emitting element of claim 1 , wherein thicknesses of the first capping layer and the second capping layer are each independently about 100 Å to about 500 Å. 8 . The light-emitting element of claim 1 , wherein the emission structure comprises an emission layer on the first electrode, a hole transport region between the first electrode and the emission layer, and an electron transport region between the emission layer and the second electrode. 9 . The light-emitting element of claim 1 , wherein the emission structure comprises: a plurality of emission units, which are sequentially stacked and each comprises a hole transport region, an emission layer and an electron transport region, and a charge generation layer, which are between each of the plurality of emission units between the first electrode and the second electrode. 10 . The light-emitting element of claim 1 , wherein the emission structure emits blue light. 11 . The light-emitting element of claim 1 , wherein the first compound is an organic material, and the second compound is an organic material or inorganic material. 12 . A display device comprising: a light-emitting element that emits a source light; and an optical control layer on the light-emitting element and configured to transmit the source light or convert a wavelength of the source light, wherein the light-emitting element comprises: a first electrode; a second electrode facing the first electrode; an emission structure between the first electrode and the second electrode; a first capping layer on the second electrode and comprising a first compound having a first refractive index of about 1.9 or greater at a wavelength of 550 nm, and a metal dopant having an absorption ratio of about 40% or more at the wavelength of 550 nm; and a second capping layer on the first capping layer and comprising a second compound having a second refractive index smaller than the first refractive index. 13 . The display device of claim 12 , wherein a difference between the first refractive index and the second refractive index is about 0.2 or greater, and the second refractive index is about 1.4 to about 1.7. 14 . The display device of claim 12 , wherein the metal dopant is an alkali metal, an alkaline earth metal, a lanthanide metal, and/or a transition metal. 15 . The display device of claim 12 , wherein a volume ratio of the first compound to the metal dopant in the first capping layer is about 99:1 to about 95:5. 16 . The display device of claim 12 , wherein thicknesses of the first capping layer and the second capping layer are each independently about 100 Å to about 500 Å. 17 . The display device of claim 12 comprising: a first pixel region that emits red light; a second pixel region that emits green light; and a third pixel region that emits blue light, wherein the first pixel region, the second pixel region, and the third pixel region do not overlap on a plane, wherein the optical control layer comprises: a first optical control member provided corresponding to the first pixel region and comprising a first quantum dot which converts a wavelength of the source light; a second optical control member provided corresponding to the second pixel region and comprising a second quantum dot which converts a wavelength of the source light; and a third optical control member provided corresponding to the third pixel region. 18 . A display device comprising: a circuit layer; a light-emitting element on the circuit layer; and an encapsulation layer on the light-emitting element, wherein the light-emitting element comprises: a first electrode; a second electrode facing the first electrode; an emission structure between the first electrode and the second electrode; a first capping layer on the second electrode and comprising a first compound having a first refractive index of about 1.9 or greater at a wavelength of 550 nm and a metal dopant having an absorption ratio of about 40% or more at the wavelength of 550 nm, and a second capping layer on the first capping layer and comprising a second compound having a second refractive index smaller than the first refractive index. 19 . The display device of claim 18 , wherein the encapsulation layer is directly on the second capping layer. 20 . The display device of claim 18 , wherein a volume ratio of the first compound to the metal dopant in the first capping layer is about 99:1 to about 95:5.
Encapsulations · CPC title
within the light-emitting regions, e.g. having quantum confinement structures · CPC title
Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title
Coatings, e.g. passivation layers or antireflective coatings · CPC title
comprising light absorbing layers, e.g. black layers · CPC title
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