Stacked laser arrangement and method for producing same

Patent metadata

Field	Value
Publication number	US-2025210941-A1
Application number	US-202318849066-A
Country	US
Kind code	A1
Filing date	Mar 24, 2023
Priority date	Mar 24, 2022
Publication date	Jun 26, 2025
Grant date	—

Abstract

The invention relates to a stacked laser arrangement, including a first laser device having a light exit side and a semiconductor body which forms a resonator and has an active zone and two main sides and side faces arranged substantially perpendicular thereto; wherein the laser device has at least one contact region on a first of the two main sides. Moreover, a first spacer having a first contact main side and a contact side face is provided, with the contact main side having at least one contact line which leads from a contact region to a connection area on or adjacent to the contact side face. With its first main side facing the first contact main side, the first laser device is fastened to the first spacer such that the at least one contact region is electrically connected to the contact region of the first contact main side, and the side faces of the first laser device are spaced apart from the contact side face.

First claim

1 . A stacked laser arrangement, comprising:
a first laser device comprising a light-emitting side and a semiconductor body forming a resonator and with an active zone and with two main sides and side surfaces arranged substantially perpendicularly thereto; the laser device having at least one contact region on a first of the two main sides; and a first spacer comprising a first contact main side and a contact side surface; the contact main side comprising at least one contact line leading from a contact area to a terminal surface on or adjacent to the contact side surface; wherein the first laser device is attached to the first spacer with the first main side facing the first contact main side, so that the at least one contact area is electrically connected to the contact area of the first contact main side and the side surfaces of the first laser device are spaced apart from the contact side surface, and wherein a length of the first spacer is less than a length of the first laser device and the first spacer is recessed with respect to the light emitting side.

2 . The stacked laser arrangement according to claim 1 , wherein a radiation profile emitted during operation of the laser device comprises a fast axis substantially perpendicular to the main contact side.

3 . The stacked laser arrangement according to claim 1 , wherein the contact side surface comprises a beveled area on which the connection surface is arranged.

4 . (canceled)

5 . The stacked laser arrangement according to claim 1 , wherein the first laser device comprises at least one contact region on a second of the two main sides; and further comprising:
a second spacer comprising a first contact main side and a contact side surface; the contact main side having at least one contact line leading from a contact area to a terminal surface on or adjacent to the contact side surface; wherein the first laser device is attached to the second spacer with the second main side facing the first main contact side of the second spacer, so that the at least one contact region of the second main side is electrically connected to the contact region of the first main contact side of the second spacer and the side surfaces of the first laser device are spaced apart from the contact side surface of the second spacer.

6 . The stacked laser arrangement according to claim 1 , wherein the first spacer comprises a second contact main side opposite the first contact main side with at least one contact area and a contact line connected thereto; the stacked laser arrangement further comprising:
a second laser device having a light emitting side and a semiconductor body forming a resonator with an active zone and having two main sides and side surfaces arranged substantially perpendicular thereto; the second laser device having at least one contact region on a first of the two main sides; and the second laser device is attached to the first spacer with the first main side facing the second main contact side of the first spacer, so that the at least one contact area is electrically connected to the contact area of the second main contact side of the first spacer and the side surfaces of the second laser device are spaced apart from the contact side surface of the first spacer.

7 . The stacked laser arrangement according to claim 1 , wherein the first and/or the second spacer is formed by a third laser device having a light emitting side and a semiconductor body forming a resonator having an active region and comprising two main sides and side faces substantially perpendicular thereto; wherein a length of the third laser device is shorter than a length of one of the first and second laser devices and longer than a length of the other of the first and second laser devices.

8 . The stacked laser arrangement according to claim 7 , wherein an isolated n-doped side of the semiconductor body of the third laser device contacts a p-doped side from the first and/or second laser device; or wherein an isolated p-doped side of the semiconductor body of the third laser device contacts an n-doped side from the first and/or second laser device.

9 . The stacked laser arrangement according to claim 7 , wherein the third laser device comprises, on a region of the first contact main side facing away from the light emitting surface, at least one contact line leading from a contact region to a connection surface on or adjacent to a side surface of the third laser device.

10 . The stacked laser arrangement according to claim 1 , wherein the contact side surface of the first and/or second spacer comprises a recess extending from the first contact main side towards the second contact main side and at least partially comprises a metallic layer forming the contact line.

11 . The stacked laser arrangement according to claim 1 , wherein first and/or second spacers comprise at least one of the following materials:
a dielectric material; a semiconductor material with at least one dielectric surface, in particular on the main contact sides; and a semiconductor material, in particular silicon or AlN, with regions of SiO2.

12 . The stacked laser arrangement according to claim 1 , wherein the spacer comprises a thickness thinner than a thickness of the first and/or second laser arrangement attached to the contact main side.

13 . A method of generating a stacked laser arrangement comprising:
providing a first laser device having a light emitting side and a semiconductor body forming a resonator having an active zone and having two main sides and side surfaces arranged substantially perpendicular thereto, the laser device having at least one contact region on a first of the two main sides; providing a first spacer having a first contact main side and a contact side surface, wherein the contact main side comprises at least one contact line leading from a contact area to a connection surface on or adjacent to the contact side surface; aligning the main side of the first laser device having the contact area with the first main side of the spacer; and attaching the first laser device to the spacer in such a way that the at least one contact area is electrically conductively connected to the contact area of the spacer and side surfaces of the first laser device are spaced apart from the contact side surface.

14 . The method according to claim 13 , further comprising
mounting the spacer with the contact side surface on a support such that a fast axis of a radiation profile emitted during operation of the laser device is substantially parallel to a surface of the support.

15 . The method of claim 13 , wherein the first laser device comprises at least one contact area on a second one of the two main sides, and further comprising:
providing a second spacer having a first contact main side and a contact side surface, wherein the contact main side comprises at least one contact line leading from a contact area to a terminal surface on or adjacent to the contact side surface; and attaching the second spacer and the first laser device to each other such that the first laser device is attached to the second spacer with the second main side facing the first main contact side of the second spacer, so that the at least one contact area of the second main side is electrically connected to the contact area of the first main contact side of the second spacer and the side surfaces of the first laser device are spaced apart from the contact side surface.

16 . The method of claim 13 , wherein the first spacer comprises a second main contact side opposite the first main contact side having at l

Assignees

• Ams Osram Int Gmbh

Inventors

• Horn Markus
• Behringer Martin
• Sorg Joerg Erich
• Berner Nicole
• Heinemann Erik
• Richter Markus
• Rozynski Andreas

Classifications

• H01S2301/17

  Semiconductor lasers comprising special layers · CPC title

• H01S5/0261

  Non-optical elements, e.g. laser driver components, heaters (H01S5/0265 takes precedence) · CPC title

• H01S5/02469

  Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC · CPC title

• H01S5/0239

  Combinations of electrical or optical elements · CPC title

• H01S5/02325

  Mechanically integrated components on mount members or optical micro-benches · CPC title