Magnetic memory device

Patent metadata

Field	Value
Publication number	US-2025185255-A1
Application number	US-202418770883-A
Country	US
Kind code	A1
Filing date	Jul 12, 2024
Priority date	Dec 5, 2023
Publication date	Jun 5, 2025
Grant date	—

Abstract

A magnetic memory device includes a substrate that includes a cell region and a boundary region adjacent to the cell region, a data storage structure that includes a magnetic tunnel junction pattern and is on the cell region, and a dummy pattern structure on the boundary region. The dummy pattern structure is spaced apart from the data storage structure in a first direction that is parallel to an upper surface of the substrate. The dummy pattern structure is parallel to the upper surface of the substrate and extends linearly in a second direction that intersects the first direction.

First claim

What is claimed is:

1 . A magnetic memory device comprising:
a substrate that comprises a cell region and a boundary region adjacent to the cell region; a data storage structure that comprises a magnetic tunnel junction pattern and is on the cell region; and a dummy pattern structure on the boundary region, wherein: the dummy pattern structure is spaced apart from the data storage structure in a first direction that is parallel to an upper surface of the substrate, and the dummy pattern structure is parallel to the upper surface of the substrate and extends linearly in a second direction that intersects the first direction.

2 . The magnetic memory device of claim 1 , wherein the dummy pattern structure further comprises:
a dummy lower electrode; a first dummy magnetic pattern on the dummy lower electrode; a dummy tunnel barrier pattern on the first dummy magnetic pattern; a second dummy magnetic pattern on the dummy tunnel barrier pattern; and a dummy upper electrode on the second dummy magnetic pattern.

3 . The magnetic memory device of claim 2 , wherein the data storage structure further comprises:
a lower electrode; a first magnetic pattern on the lower electrode; a tunnel barrier pattern on the first magnetic pattern; a second magnetic pattern on the tunnel barrier pattern; and an upper electrode on the second magnetic pattern, wherein the dummy lower electrode and the lower electrode comprise a first material, wherein the first dummy magnetic pattern and the first magnetic pattern comprise a second material, wherein the dummy tunnel barrier pattern and the tunnel barrier pattern comprise a third material, wherein the second dummy magnetic pattern and the second magnetic pattern comprise a fourth material, and wherein the dummy upper electrode and the upper electrode comprise a fifth material.

4 . The magnetic memory device of claim 1 , wherein the dummy pattern structure has a shape of a square ring when viewed in a plan view.

5 . The magnetic memory device of claim 4 , further comprising a plurality of data storage structures that comprise the data storage structure, wherein:
the plurality of data storage structures are spaced apart from each other in the first direction and the second direction, and the dummy pattern structure at least partially surrounds the plurality of data storage structures when viewed in the plan view.

6 . The magnetic memory device of claim 1 , wherein a dimension of an upper surface of the data storage structure in the first direction is greater than a width of an upper surface of the dummy pattern structure in the first direction.

7 . The magnetic memory device of claim 1 , wherein a dimension of an upper surface of the data storage structure in the first direction is less than a length of an upper surface of the dummy pattern structure in the second direction.

8 . The magnetic memory device of claim 1 , wherein:
each of an upper surface and a lower surface of the data storage structure contacts a conductive material, and each of an upper surface and a lower surface of the dummy pattern structure contacts an insulating material.

9 . The magnetic memory device of claim 1 , further comprising:
a plurality of data storage structures that comprise the data storage structure; and a lower interlayer insulating layer that is between the substrate and the data storage structure and is between the substrate and the dummy pattern structure, wherein the lower interlayer insulating layer comprises a first upper surface that is between a pair of the plurality of data storage structures and is at a first height relative to the upper surface of the substrate in a third direction that is perpendicular to the upper surface of the substrate, wherein the lower interlayer insulating layer comprises a second upper surface that is on the boundary region and is at a second height relative to the upper surface of the substrate in the third direction, wherein the lower interlayer insulating layer comprises an uppermost surface that is at a third height relative to the upper surface of the substrate in the third direction, wherein the third height is greater than the first height and the second height, and wherein a difference between the first height and the second height is 10 nm or less.

10 . A magnetic memory device comprising:
a substrate that comprises a cell region and a boundary region adjacent to the cell region; a data storage structure that comprises a magnetic tunnel junction pattern and is on the cell region; and a dummy pattern structure on the boundary region, wherein the dummy pattern structure is spaced apart from the data storage structure in a first direction that is parallel to an upper surface of the substrate, wherein the dummy pattern structure comprises a dummy upper electrode, wherein the dummy upper electrode comprises a first side surface and a second side surface, wherein the first side surface is between the data storage structure and the second side surface, and wherein a height of the first side surface relative to a lower surface of the dummy upper electrode in a second direction that is perpendicular to an upper surface of the substrate is less than a height of the second side surface relative to the lower surface of the dummy upper electrode in the second direction.

11 . The magnetic memory device of claim 10 , wherein:
the dummy pattern structure comprises a third side surface and a fourth side surface, the third side surface is between the data storage structure and the fourth side surface, and a height of the third side surface relative to a lower surface of the dummy pattern structure in the second direction is less than a height of the fourth side surface relative to the lower surface of the dummy pattern structure in the second direction.

12 . The magnetic memory device of claim 10 , wherein a thickness of the dummy upper electrode increases from the first side surface of the dummy upper electrode to the second side surface of the dummy upper electrode in the first direction.

13 . The magnetic memory device of claim 10 , wherein an upper surface of the dummy upper electrode is sloped in the first direction and relative to the upper surface of the substrate.

14 . The magnetic memory device of claim 10 , wherein a height of the upper surface of the dummy upper electrode relative to the lower surface of the dummy upper electrode in the second direction increases from the first side surface of the dummy upper electrode to the second side surface of the dummy upper electrode.

15 . The magnetic memory device of claim 10 , wherein an upper surface of the dummy upper electrode has a step shape.

16 . The magnetic memory device of claim 10 , wherein:
the data storage structure further comprises an upper electrode, and a thickness deviation of the dummy upper electrode in the first direction is greater than a thickness deviation of the upper electrode in the first direction.

17 . The magnetic memory device of claim 10 , wherein a first width of the data storage structure in the first direction is greater than a second width of the dummy pattern structure in the first direction.

18 . The magnetic memory device of claim 10 , wherein:
each of an upper surface and a lower surface of the data storage structure contacts a conductive material, and each of an upper surface and a lower surface of the dummy pattern structure contacts an insulating material.

19 . A magnetic memory device comprising:
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Assignees

• Samsung Electronics Co Ltd

Inventors

• Kwon Bae-Seong
• Kim Minjae
• Kim Hong Hyun
• Bak Myeongjun
• Lee Kangho
• Cho Minkwon
• Han Shinhee

Classifications

• H10B61/22

  of the field-effect transistor [FET] type · CPC title

• H10B61/10

  comprising components having two electrodes, e.g. diodes or MIM elements · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• H10N50/80 Primary

  Constructional details · CPC title

• H10N50/01 Primary

  Manufacture or treatment · CPC title