Radio frequency module

Patent metadata

Field	Value
Publication number	US-2025183924-A1
Application number	US-202418956808-A
Country	US
Kind code	A1
Filing date	Nov 22, 2024
Priority date	Dec 4, 2023
Publication date	Jun 5, 2025
Grant date	—

Abstract

A radio frequency module includes a first semiconductor device that includes a circuit for a signal in a first frequency band, a second semiconductor device that includes a circuit for a signal in a second frequency band, a first external connection terminal that receives a transmit signal in the first frequency band, a second external connection terminal that receives a transmit signal in the second frequency band, a first switch that is electrically connected to the first external connection terminal or the second external connection terminal, a power amplifier that receives a signal outputted from the first switch, a third external connection terminal that receives a selectively-transported output signal from the power amplifier and that is electrically connected to an external first antenna, and a fourth external connection terminal that receives a selectively-transported output signal from the power amplifier and that is electrically connected to an external second antenna.

First claim

What is claimed is:

1 . A radio frequency module comprising:
a first semiconductor device comprising a circuit for a signal in a first frequency band; a second semiconductor device comprising a circuit for a signal in a second frequency band, the second frequency band being different from the first frequency band; a first external connection terminal that receives a transmit signal in the first frequency band; a second external connection terminal that receives a transmit signal in the second frequency band; a first switch that is selectively electrically connected to the first external connection terminal or to the second external connection terminal; a power amplifier that receives a signal outputted from the first switch; a third external connection terminal that receives a selectively-transported output signal from the power amplifier and that is electrically connected to an external first antenna; and a fourth external connection terminal that receives a selectively-transported output signal from the power amplifier and that is electrically connected to an external second antenna.

2 . A radio frequency module comprising:
a first semiconductor device comprising a circuit for a signal in a first frequency band; a second semiconductor device comprising a circuit for a signal in a second frequency band, the second frequency band being different from the first frequency band; a first external connection terminal that receives a transmit signal in the first frequency band; a second external connection terminal that receives a transmit signal in the second frequency band; a first switch that is selectively electrically connected to the first external connection terminal or to the second external connection terminal; a power amplifier that receives a signal outputted from the first switch; a second switch that receives an output signal from the power amplifier; a diplexer that receives a signal outputted from the second switch; and a fifth external connection terminal that receives a signal outputted from the diplexer and that is electrically connected to an external third antenna.

3 . The radio frequency module according to claim 1 , further comprising:
a second switch that receives an output signal from the power amplifier; a first bandpass filter that is between the second switch and the third external connection terminal; and a second bandpass filter that is between the second switch and the fourth external connection terminal.

4 . The radio frequency module according to claim 1 , further comprising:
a diplexer that receives an output signal from the power amplifier, wherein the diplexer is electrically connected to the third external connection terminal, and wherein the diplexer is electrically connected to the fourth external connection terminal.

5 . The radio frequency module according to claim 1 , further comprising:
an impedance matching circuit that is in a first path that connects the first external connection terminal to the first switch, a second path that connects the second external connection terminal to the first switch, a third path that connects the first switch to the power amplifier, a fourth path that connects the power amplifier to the third external connection terminal, or a fifth path that connects the power amplifier to the fourth external connection terminal.

6 . The radio frequency module according to claim 2 , further comprising:
an impedance matching circuit that is in a first path that connects the first external connection terminal to the first switch, a second path that connects the second external connection terminal to the first switch, a third path that connects the first switch to the power amplifier, a fourth path that connects the power amplifier to the second switch, a fifth path that connects the second switch to the diplexer, or a sixth path that connects the diplexer to the fifth external connection terminal.

7 . The radio frequency module according to claim 1 , wherein the first switch is configured to not receive the transmit signal in the first frequency band and the transmit signal in the second frequency band at the same time.

8 . The radio frequency module according to claim 2 , wherein the first switch is configured to not receive the transmit signal in the first frequency band and the transmit signal in the second frequency band at the same time.

9 . The radio frequency module according to claim 1 , wherein the power amplifier is in the second semiconductor device.

10 . The radio frequency module according to claim 2 , wherein the power amplifier is in the second semiconductor device.

11 . The radio frequency module according to claim 1 , wherein the power amplifier is in the first semiconductor device.

12 . The radio frequency module according to claim 2 , wherein the power amplifier is in the first semiconductor device.

13 . The radio frequency module according to claim 1 , wherein the power amplifier is in a third semiconductor device.

14 . The radio frequency module according to claim 2 , wherein the power amplifier is in a third semiconductor device.

15 . The radio frequency module according to claim 1 ,
wherein the first frequency band is an Ultra Wide Band (UWB) band, and wherein the second frequency band is an Ultra High Band (UHB) band.

16 . The radio frequency module according to claim 2 ,
wherein the first frequency band is an Ultra Wide Band (UWB) band, and wherein the second frequency band is an Ultra High Band (UHB) band.

Assignees

• Murata Manufacturing Co

Inventors

• Sakita Satoshi
• Takahashi Wataru
• Takezono Naofumi
• Ikegami Katsuya

Classifications

• H04L5/14

  Two-way operation using the same type of signal, i.e. duplex · CPC title

• H04B1/401

  for selecting or indicating operating mode · CPC title

• H04B1/0064 Primary

  with separate antennas for the more than one band (H04B1/0053 takes precedence) · CPC title

• H03F2200/294

  the amplifier being a low noise amplifier [LNA] · CPC title

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title