Method of manufacturing photonic crystal and method of manufacturing light-emitting device

Patent metadata

Field	Value
Publication number	US-2025183621-A1
Application number	US-202418964658-A
Country	US
Kind code	A1
Filing date	Dec 1, 2024
Priority date	Dec 4, 2023
Publication date	Jun 5, 2025
Grant date	—

Abstract

A method of manufacturing a photonic crystal, wherein a diameter of a first hole is larger than that of a third hole, a diameter of a second hole is larger than that of a fourth hole in a step of forming the holes, a difference between the diameter of the first hole and a diameter of a first low refractive index portion is larger than a difference between the diameter of the third hole and a diameter of a third low refractive index portion, and a difference between the diameter of the second hole and a diameter of a second low refractive index portion is larger than a difference between the diameter of the fourth hole and a diameter of a fourth low refractive index portion in a step of forming the low refractive index portions.

First claim

What is claimed is:

1 . A method of manufacturing a photonic crystal, the method comprising:
forming a first layer; forming, in the first layer, a first hole, a second hole separated from the first hole by a first distance in a first direction, a third hole separated from the first hole by a second distance larger than the first distance in a second direction intersecting the first direction, and a fourth hole separated from the third hole by a third distance smaller than the second distance in the first direction; and crystal-growing a second layer in the first hole, the second hole, the third hole, and the fourth hole to form a first low refractive index portion having a lower refractive index than the first layer in the first hole, form a second low refractive index portion having a lower refractive index than the first layer in the second hole, form a third low refractive index portion having a lower refractive index than the first layer in the third hole, and form a fourth low refractive index portion having a lower refractive index than the first layer in the fourth hole, wherein in the forming of the first hole, the second hole, the third hole, and the fourth hole, the first hole and the third hole are formed so that a diameter of the first hole is larger than that of the third hole, and the second hole and the fourth hole are formed so that a diameter of the second hole is larger than that of the fourth hole, and in the forming of the first low refractive index portion, the second low refractive index portion, the third low refractive index portion, and the fourth low refractive index portion, the second layer is crystal-grown so that a difference between the diameter of the first hole and a diameter of the first low refractive index portion is larger than a difference between the diameter of the third hole and a diameter of the third low refractive index portion, and a difference between the diameter of the second hole and a diameter of the second low refractive index portion is larger than a difference between the diameter of the fourth hole and a diameter of the fourth low refractive index portion.

2 . The method of manufacturing a photonic crystal according to claim 1 , wherein
the diameter of the first hole is smaller than that of the second hole, and the diameter of the third hole is smaller than that of the fourth hole.

3 . The method of manufacturing a photonic crystal according to claim 1 , wherein
the first low refractive index portion and the second low refractive index portion form a first pair, the third low refractive index portion and the fourth low refractive index portion form a second pair, and the first pair and the second pair form a unit lattice.

4 . The method of manufacturing a photonic crystal according to claim 1 , wherein
the refractive index of the first layer and the refractive index of the second layer are different from each other.

5 . The method of manufacturing a photonic crystal according to claim 1 , wherein
the second layer is crystal-grown by a MOCVD method.

6 . The method of manufacturing a photonic crystal according to claim 5 , wherein
a growth temperature of the second layer is 550° C. or more and 650° C. or less.

7 . The method of manufacturing a photonic crystal according to claim 6 , wherein
the second layer is a group III-V semiconductor layer, and a ratio of a flow rate of a second gas supplying a group V element to a flow rate of a first gas supplying a group III element in the crystal growth of the second layer is 10 or more and 30 or less.

8 . The method of manufacturing a photonic crystal according to claim 7 , wherein
the first low refractive index portion, the second low refractive index portion, the third low refractive index portion, and the fourth low refractive index portion are voids.

9 . The method of manufacturing a photonic crystal according to claim 8 , wherein
in the crystal growth of the second layer, upper sides of the first hole, the second hole, the third hole, and the fourth hole are blocked by the second layer, so that the first gas and the second gas are not supplied to the first hole, the second hole, the third hole, and the fourth hole, and then the voids are formed, wherein the upper side of the first hole is blocked later than the upper side of the third hole, and the upper side of the second hole is blocked later than the upper side of the fourth hole.

10 . A method of manufacturing a light-emitting device comprising the method of manufacturing a photonic crystal according to claim 1 .

Assignees

• Seiko Epson Corp

Inventors

• Kumai Yoshitomo
• Nimura Toru

Classifications

• H01S5/185

  having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] (comprising a photonic bandgap structure H01S5/11) · CPC title

• H01S5/11

  Comprising a photonic bandgap structure · CPC title

• H01S5/18308 Primary

  having a special structure for lateral current or light confinement · CPC title

• H01S2304/04

  MOCVD or MOVPE · CPC title

• H01S5/3013 Primary

  AIIIBV compounds · CPC title