Manufacturing method of light-emitting diode substrate, display device

Patent metadata

Field	Value
Publication number	US-2025183089-A1
Application number	US-202519043901-A
Country	US
Kind code	A1
Filing date	Feb 3, 2025
Priority date	Oct 30, 2020
Publication date	Jun 5, 2025
Grant date	—

Abstract

A manufacturing method of light-emitting diode substrate and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: obtaining an epitaxial layer group of M light-emitting diode chips grown on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate; the light-emitting diode chips corresponding to the N epitaxial layer groups on the N substrates are configured to emit light of a same color; M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.

First claim

1 . A manufacturing method of a light-emitting diode substrate, comprising:
obtaining an epitaxial layer group of M light-emitting diode chips grown on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate; wherein the epitaxial layer group of M light-emitting diode chips grown on the substrate comprises a first conductivity type semiconductor layer grown on the substrate; a light-emitting layer formed on a side of the first conductivity type semiconductor layer away from the substrate; and a second conductivity type semiconductor layer formed on a side of the light-emitting layer away from the first conductivity type semiconductor layer, the light-emitting diode chips corresponding to the N epitaxial layer groups on the N substrates are configured to emit light of a same color; M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.

2 . The manufacturing method of the light-emitting diode substrate according to claim 1 , wherein the at least part of light-emitting diode chips transferred onto the driving substrate are all light-emitting diode chips emitting the same color of the driving substrate.

3 . The manufacturing method of the light-emitting diode substrate according to claim 1 , wherein the values of M on different substrates are not all the same.

4 . The manufacturing method of the light-emitting diode substrate according to claim 1 , wherein the at least part of light-emitting diode chips transferred onto the driving substrate are uniformly distributed.

5 . The manufacturing method of the light-emitting diode substrate according to claim 1 , wherein the driving substrate is provided with a plurality of first color light-emitting diode chips, a plurality of second color light-emitting diode chips, and a plurality of third color light-emitting diode chips,
all of the first color light-emitting diode chips on the driving substrate are formed by transferring at least part of light-emitting diode chips corresponding to the N epitaxial layer groups on a first transition carrier substrate onto the driving substrate, all of the first color light-emitting diode chips on the driving substrate are formed by transferring at least part of light-emitting diode chips corresponding to the N epitaxial layer groups on a second transition carrier substrate onto the driving substrate, all of the first color light-emitting diode chips on the driving substrate are formed by transferring at least part of light-emitting diode chips corresponding to the N epitaxial layer groups on a third transition carrier substrate onto the driving substrate, wherein the first color light-emitting diode chips are red light-emitting diode chips, the second color light-emitting diode chips are green light-emitting diode chips, and the third color light-emitting diode chips are blue light-emitting diode chips.

6 . The manufacturing method of the light-emitting diode substrate according to claim 1 , wherein, on the transition carrier substrate, a distance between two adjacent epitaxial layer groups is approximately equal to a distance between two adjacent light-emitting diode chips.

7 . The manufacturing method of the light-emitting diode substrate according to claim 1 , wherein the driving substrate comprises a base substrate and a plurality of driving circuits on the base substrate, each of the plurality of driving circuits comprises a pad and is configured to drive a light-emitting diode chip electrically connected with the pad to emit light, and the manufacturing method further comprises:
bonding the light-emitting diode chip transferred on the driving substrate with the pad of a corresponding one of the plurality of driving circuits by adopting a bonding process.

8 . The manufacturing method of the light-emitting diode substrate according to claim 7 , wherein bonding the light-emitting diode chip transferred on the driving substrate with the pad of the corresponding one of the plurality of driving circuits by adopting the bonding process comprises:
performing thermal reflow on the driving substrate to bond the light-emitting diode chip and the pad together.

9 . The manufacturing method of the light-emitting diode substrate according to claim 1 , wherein transferring the N epitaxial layer groups on the N substrates to the transition carrier substrate comprises:
forming a first adhesive layer on the transition carrier substrate; and transferring the N epitaxial layer groups on the N substrates to a side of the first adhesive layer away from the transition carrier substrate.

10 . The manufacturing method of the light-emitting diode substrate according to claim 9 , wherein forming the first adhesive layer on the transition carrier substrate comprises:
coating a first adhesive material layer on the transition carrier substrate; and patterning the first adhesive material layer to form a plurality of through holes penetrating through the first adhesive material layer in the first adhesive material layer, wherein the first adhesive material layer comprising the plurality of through holes is the first adhesive layer, and a size of an orthographic projection of each of the plurality of through holes on the transition carrier substrate is smaller than a size of an orthographic projection of each of the light-emitting diode chips on the transition carrier substrate.

11 . The manufacturing method of the light-emitting diode substrate according to claim 9 , wherein a material of the first adhesive layer comprises ultraviolet light viscosity reducing adhesive or laser dissociation adhesive.

12 . The manufacturing method of the light-emitting diode substrate according to claim 1 , wherein the M light-emitting diode chips comprise:
M electrode structures on a side of the epitaxial layer group away from the substrate, wherein the M electrode structures are in one-to-one correspondence with the M light-emitting diode chips.

13 . The manufacturing method of the light-emitting diode substrate according to claim 12 , wherein transferring the N epitaxial layer groups on the N substrates to the transition carrier substrate comprises:
transferring the substrate on which the M light-emitting diode chips are formed to a transfer substrate; peeling off the substrate from the transfer substrate; and transferring light-emitting diode chips on N transfer substrates to the transition carrier substrate.

14 . The manufacturing method of the light-emitting diode substrate according to claim 12 , wherein transferring the substrate on which M light-emitting diode chips are formed to the transfer substrate comprises:
coating a second adhesive layer on the transfer substrate; and transferring the substrate on which M light-emitting diode chips are formed to a side of the second adhesive layer away from the transfer substrate, wherein a material of the second adhesive layer comprises ultraviolet light viscosity reducing adhesive or laser dissociation adhesive, and after transferring the light-emitting diode chips on the N transfer substrates to the transition carrier substrate, irradiating light to the transfer substrates to reduce viscosity of the second adhesive layer, so as to remove the transfer substrates.

15 . The manufacturing method of the light-emitting diode sub

Assignees

• Boe Technology Group Co Ltd

Inventors

• Li Haixu
• Zhang Xiao
• Wang Fei
• Wang Mingxing
• Li Shulei
• Dong Xue
• Yuan Guangcai
• Cao Zhanfeng
• Gu Xin
• Wang Ke
• Qu Feng
• Liang Xuan
• Yan Junwei

Classifications

• H10P72/7442

  Separation by peeling · CPC title

• H10P72/7434

  used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate · CPC title

• H10P72/7428

  used to support diced chips prior to mounting · CPC title

• H10W90/00

  Package configurations · CPC title

• H10P72/74 Primary

  using temporarily an auxiliary support · CPC title