Capacitor and method for manufacturing same
US-2024347278-A1 · Oct 17, 2024 · US
US2025182974A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025182974-A1 |
| Application number | US-202418944681-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 12, 2024 |
| Priority date | Dec 1, 2023 |
| Publication date | Jun 5, 2025 |
| Grant date | — |
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A multilayer electronic component includes a body including a dielectric layer and internal electrodes; and external electrodes disposed on the body, wherein the dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-shell structure including a core and a shell surrounding at least a portion of the core, wherein a percentage of an average diameter of the core based on an average thickness of the dielectric layer is 15% or more and 19% or less, and wherein the shell includes rare earth elements and tin (Sn), and an average atomic percentage of a sum of rare earth elements and tin (Sn) in the shell is 0.8 at % or more and 1.2 at % or less.
Opening claim text (preview).
What is claimed is: 1 . A multilayer electronic component, comprising: a body including a dielectric layer and internal electrodes; and external electrodes disposed on the body, wherein the dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-shell structure including a core and a shell surrounding at least a portion of the core, wherein an average diameter of the core is 15% or more and 19% or less of an average thickness of the dielectric layer, and wherein the shell includes rare earth elements and tin (Sn), and an average atomic percentage of a sum of the rare earth elements and tin (Sn) included in the shell is 0.8 at % or more and 1.2 at % or less with respect to a total atomic amount of the shell. 2 . The multilayer electronic component of claim 1 , wherein an average atomic percentage of the rare earth elements included in the shell is 0.2 at % or more and 0.7 at % or less. 3 . The multilayer electronic component of claim 1 , wherein an average atomic percentage of tin (Sn) included in the shell is 0.2 at % or more and 1.0 at % or less. 4 . The multilayer electronic component of claim 1 , wherein an average thickness of the dielectric layer is less than 0.8 μm. 5 . The multilayer electronic component of claim 1 , wherein an average diameter of the core is 70 nm or more and 120 nm or less. 6 . The multilayer electronic component of claim 1 , wherein an average atomic percentage of the rare earth elements in the core is 0 at % or more and less than 0.2 at %. 7 . The multilayer electronic component of claim 1 , wherein an average atomic percentage of tin (Sn) in the core is 0 at % or more and less than 0.2 at %. 8 . The multilayer electronic component of claim 1 , wherein an average atomic percentage of a sum of the rare earth elements and tin (Sn) included in the core is 0 at % or more and less than 0.4 at %. 9 . The multilayer electronic component of claim 1 , wherein the dielectric layer includes barium titanate (BaTiO 3 )-based material as a main component. 10 . The multilayer electronic component of claim 1 , wherein the rare earth elements include at least one of dysprosium (Dy) or terbium (Tb). 11 . The multilayer electronic component of claim 1 , wherein an average thickness of the internal electrode is 0.6 μm or less. 12 . The multilayer electronic component of claim 1 , wherein the multilayer electronic component has a length of 0.6 mm or less and a width of 0.3 mm or less.
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