Power semiconductor device and method of manufacturing power semiconductor device

Patent metadata

Field	Value
Publication number	US-2025167073-A1
Application number	US-202218880361-A
Country	US
Kind code	A1
Filing date	Oct 13, 2022
Priority date	Oct 13, 2022
Publication date	May 22, 2025
Grant date	—

Abstract

A power semiconductor device includes: heat sink integrated power modules each including a power module and a heat sink integrated with each other; a box-shaped holding portion including one surface having a plurality of openings formed thereon; and a structural support provided inside the holding portion and supporting the one surface. Heat dissipation fins of each of the heat sink integrated power modules are inserted in the holding portion from a corresponding one of the openings, and a heat sink base includes an outer peripheral edge supported on an adjacent region of the one surface, the adjacent region being adjacent to the corresponding opening. The structural support is disposed at a position corresponding to the space between the heat sink bases of the heat sink integrated power modules adjacent to each other.

First claim

1 . A power semiconductor device comprising:
heat sink integrated power modules each including a power module and a heat sink that are integrated with each other, the heat sink including a plurality of heat dissipation fins provided on a heat sink base thereof and dissipating heat generated in the power module; a holding portion having a box shape including an inlet of air and an outlet of air that are provided facing each other, the holding portion including one surface interconnecting the inlet and the outlet, the one surface having a plurality of openings formed thereon; and a structural support provided inside the holding portion and supporting the one surface by bearing a load directed in a direction from the one surface toward the inside of the holding portion, wherein the plurality of the heat dissipation fins of each of the heat sink integrated power modules is inserted in the holding portion from a corresponding one of the openings, and the heat sink base includes an outer peripheral edge supported on an adjacent region of the one surface in an in-plane direction of the heat sink base, the adjacent region being adjacent to the corresponding opening, and the structural support is disposed extending in the direction from the inlet toward the outlet in a region from the inlet to the outlet, at a position corresponding to space between the heat sink bases of the heat sink integrated power modules adjacent to each other in a width direction of the holding portion, the width direction being a direction orthogonal to a direction from the inlet toward the outlet.

2 . The power semiconductor device according to claim 1 , wherein
the holding portion includes: an outer frame having a U shape, the outer frame including a bottom surface portion and two side surface portions rising from a pair of ends of the bottom surface portion, the pair of ends facing each other; and a plate-shaped housing constituting the one surface, the housing being supported by ends of the two side surface portions, the ends of the two side surface portions being free ends of the U shape, and the adjacent region of the housing and the outer peripheral edge of the heat sink base are screwed together.

3 . The power semiconductor device according to claim 2 , wherein
the structural support is fixed to the outer frame and is in contact with the housing.

4 . The power semiconductor device according to claim 2 , wherein
the structural support is fixed to the housing and is in contact with the outer frame.

5 . The power semiconductor device according to claim 4 , wherein
the structural support has a width in the direction orthogonal to the direction from the inlet toward the outlet, and the width of the structural support is larger than a gap between the heat sink bases of the heat sink integrated power modules adjacent to each other in the width direction of the holding portion.

6 . The power semiconductor device according to claim 4 , comprising
a first heat sink integrated power module and a second heat sink integrated power module that are the heat sink integrated power modules adjacent to each other in the width direction of the holding portion, wherein the first heat sink integrated power module includes a first protrusion at an end of the heat sink base on a side of the second heat sink integrated power module, the second heat sink integrated power module includes a second protrusion at an end of the heat sink base on a side of the first heat sink integrated power module, and the first protrusion, the second protrusion, the housing, and the structural support are screwed together overlapping one another.

7 . The power semiconductor device according to claim 1 , wherein
the structural support continuously extends in the direction from the inlet toward the outlet in a region from the inlet to the outlet.

8 . The power semiconductor device according to claim 1 , wherein
the structural support is discontinuously disposed in the direction from the inlet toward the outlet in a region from the inlet to the outlet.

9 . The power semiconductor device according to claim 1 , wherein
the structural support has elasticity.

10 . The power semiconductor device according to claim 1 , wherein
the structural support includes a through hole passing through the structural support in the direction from the inlet toward the outlet.

11 . The power semiconductor device according to claim 1 , wherein
the structural support includes irregularities on a surface thereof.

12 . A method of manufacturing a power semiconductor device, the method comprising:
fixing a structural support to an outer frame having a U shape, the outer frame including a bottom surface portion and two side surface portions rising from a pair of ends of the bottom surface portion, the pair of ends facing each other; placing a plate-shaped housing on ends of the two side surface portions, the ends of the two side surface portions being free ends of the U shape, the housing having a plurality of openings formed thereon; inserting a plurality of heat dissipation fins of a heat sink integrated power module into the outer frame from a corresponding one of the plurality of the openings, and placing an outer peripheral edge of a heat sink base in an in-plane direction of the heat sink base on an adjacent region of the housing, the adjacent region being adjacent to the corresponding opening, the heat sink integrated power module including a power module and a heat sink that are integrated with each other, the heat sink including the plurality of the heat dissipation fins provided on the heat sink base and dissipating heat generated in the power module; screwing the housing and the outer frame together; and screwing the outer peripheral edge of the heat sink base and the adjacent region of the housing together, wherein the structural support is disposed at a position corresponding to space between the heat sink bases of the heat sink integrated power modules adjacent to each other in a width direction of the U shape.

13 . A method of manufacturing a power semiconductor device, the method comprising:
fixing a structural support to a plate-shaped housing having a plurality of openings formed thereon; placing the housing on ends of two side surface portions of an outer frame having a U shape, the outer frame including a bottom surface portion and the two side surface portions rising from a pair of ends of the bottom surface portion, the pair of ends facing each other, the ends of the two side surface portions being free ends of the U shape; inserting a plurality of heat dissipation fins of a heat sink integrated power module into the outer frame from a corresponding one of the plurality of the openings, and placing an outer peripheral edge of a heat sink base in an in-plane direction of the heat sink base on an adjacent region of the housing, the adjacent region being adjacent to the corresponding opening in the housing, the heat sink integrated power module including a power module and a heat sink that are integrated with each other, the heat sink including the plurality of the heat dissipation fins provided on the heat sink base and dissipating heat generated in the power module; screwing the housing and the outer frame together; and screwing the outer peripheral edge of the heat sink base and the adjacent region of the housing together, wherein the structural support is disposed at a position corresponding to space between the heat sink bases of the heat sink integrated power modules adjacent to each other in a width direction of the U shape.

Assignees

• Mitsubishi Electric Corp

Inventors

• Sanda Yasuyuki
• Morisada Tatsushi
• Goto Masaki

Classifications

• H10W40/228 Primary

  the projecting parts being wire-shaped or pin-shaped · CPC title

• H10W40/611 Primary

  Bolts or screws · CPC title

• H10W40/60

  Securing means for detachable heating or cooling arrangements, e.g. clamps · CPC title

• H01L2023/4031

  Electricity · mapped topic

• H01L23/3677

  Electricity · mapped topic