Shift register, gate driving circuit and display substrate with conductive lines between output transistor and capacitor structure

Patent metadata

Field	Value
Publication number	US-2025166572-A1
Application number	US-202519030782-A
Country	US
Kind code	A1
Filing date	Jan 17, 2025
Priority date	Nov 29, 2021
Publication date	May 22, 2025
Grant date	—

Abstract

A shift register is provided to include a voltage control circuit coupled to an output control node; at least one driving output circuit, each including an output transistor and a capacitor structure sequentially arranged along a first direction; a first conductive line therebetween and extending along a second direction and coupled to a signal output line configured for the driving output circuit; the output transistor includes a gate electrode coupled to the output control node and a first voltage writing electrode of the capacitor structure, a first electrode coupled to a clock signal line configured for the driving output circuit and a second electrode coupled to the first conductive line; a second conductive line is disposed between the first conductive line and the capacitor structure, and the first conductive line is coupled to a second voltage writing electrode of the capacitor structure through the second conductive line.

First claim

What is claimed is:

1 . A shift register, comprising:
a voltage control circuit coupled to an output control node and configured to control a voltage at the output control node; and at least one driving output circuit, each comprising: an output transistor and a capacitor structure which are arranged along a first direction, wherein the output transistor and the capacitor structure are coupled to each other through a first conductive line extending along a second direction, and the first conductive line is coupled to a signal output line configured for the driving output circuit; the output transistor comprises a gate electrode, a first electrode and a second electrode, the first electrode comprises a first main portion and at least one first branch portion, the second electrode comprises a second main portion and at least one second branch portion; the at least one first branch portion and the at least one second branch portion of the output transistor are alternately arranged in the second direction, the gate electrode of the output transistor is coupled to the output control node and a first voltage writing electrode of the capacitor structure, the first electrode of the output transistor is coupled to a clock signal line configured for the driving output circuit, and the second electrode of the output transistor is coupled to the first conductive line; and a second conductive line is provided between the first conductive line and the capacitor structure, and the first conductive line is coupled to a second voltage writing electrode of the capacitor structure through the second conductive line.

2 . The shift register of claim 1 , wherein the first conductive line is arranged between at least a part of the output transistor and the capacitor structure.

3 . The shift register of claim 2 , wherein an extending direction of the first conductive line is different from that of the second conductive line.

4 . The shift register of claim 1 , wherein the first conductive line and the second electrode of the output transistor are arranged in a same layer.

5 . The shift register of claim 1 , wherein the second conductive line and the first conductive line are arranged in a same layer.

6 . The shift register of claim 1 , wherein the capacitor structure comprises at least two capacitor units connected to each other in parallel, and
first voltage writing electrodes of the at least two capacitor units are coupled to the gate of the output transistor, and second voltage writing electrodes of the at least two capacitor units are coupled to the signal output line configured for the driving output circuit.

7 . The shift register of claim 6 , wherein the at least two capacitor units of the capacitor structure are divided into at least two capacitor unit groups arranged along the second direction, each comprising at least one capacitor unit;
each of the at least two capacitor unit groups is configured with a corresponding second conductive line, and different capacitor unit groups correspond to different second conductive lines, respectively; and in each of the at least two capacitor unit groups, a second voltage writing electrode of the capacitor unit closest to the first conductive line is coupled to the first conductive line through the second conductive line corresponding to the capacitor unit group.

8 . The shift register of claim 7 , further comprising at least two third conductive lines between the output transistor and the capacitor structure and in a one-to-one correspondence with the at least two capacitor unit groups; and
a first voltage writing electrode of the capacitor unit closest to the first conductive line in the capacitor unit group is coupled to the gate electrode of the output transistor through the third conductive line corresponding to the capacitor unit group.

9 . The shift register of claim 8 , wherein the at least two third conductive lines are in a same layer as the gate electrode of the output transistor.

10 . The shift register of claim 8 , wherein an extending direction of the third conductive line is different from that of the second conductive line.

11 . The shift register of claim 7 , wherein
the at least two capacitor units of the capacitor structure are arranged in an array along the first direction and the second direction; first voltage writing electrodes of any two adjacent capacitor units in the first direction or the second direction are coupled to each other through a fourth conductive line between the two adjacent capacitor units; and second voltage writing electrodes of any two adjacent capacitor units in the first direction or the second direction are coupled to each other through a fifth conductive line between the two adjacent capacitor units.

12 . The shift register of claim 11 , wherein
the fourth conductive line and the gate electrode of the output transistor are arranged in a same layer; and the fifth conductive line and the second electrode of the output transistor are arranged in a same layer.

13 . The shift register of claim 1 , wherein the at least one driving output circuit comprises at least two driving output circuits, comprising a first driving output circuit and a second driving output circuit;
the output transistor in the first driving output circuit, the capacitor structure in the first driving output circuit, the capacitor structure in the second driving output circuit, and the output transistor in the second driving output circuit are sequentially arranged along the first direction; and a first voltage writing electrode of the capacitor structure in the first driving output circuit and a first voltage writing electrode of the capacitor structure in the second driving output circuit are coupled to each other through a conductive structure between the capacitor structure in the first driving output circuit and the capacitor structure in the second driving output circuit.

14 . The shift register of claim 13 , wherein the clock signal line configured for the driving output circuit comprises a portion extending along the second direction, which is on a side of the output transistor away from the capacitor structure in the driving output circuit.

15 . The shift register of claim 14 , wherein the first electrode of the output transistor extends along the first direction; and
an end of the first electrode away from the capacitor structure is connected to the portion of the clock signal line extending along the second direction.

16 . The shift register of claim 13 , wherein the gate electrode of the output transistor comprises a first portion extending along the first direction and a second portion extending along the second direction, the first portion is coupled to the second portion, and the second portion is arranged on a side of the first portion away from the capacitor structure.

17 . The shift register of claim 1 , wherein the first voltage writing electrode is a single-layer structure; the first voltage writing electrode and the gate electrode of the output transistor are in a same layer;
the second voltage writing electrode is a single-layer structure, and the second voltage writing electrode and the second electrode of the output transistor are in a same layer; and a light shielding pattern is on a side of the output transistor, and an orthographic projection of the light shielding pattern on a base at least partially overlaps with an orthographic projection of a line, wherein the gate electrode of the output transistor is located, on the base.

18 . The shift r

Assignees

• Hefei Boe Joint Tech Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Feng Xuehuan
• Zhang Dacheng
• Li Yongqian
• Xie Mingming

Classifications

• H10D86/443

  adapted for preventing breakage, peeling or short circuiting · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• G11C19/28

  using semiconductor elements (G11C19/14, G11C19/36 take precedence) · CPC title

• G09G2310/08

  Details of timing specific for flat panels, other than clock recovery · CPC title

• G09G2310/0286

  Details of a shift registers arranged for use in a driving circuit · CPC title