Image sensor including spectral filter and electronic apparatus including the image sensor

Patent metadata

Field	Value
Publication number	US-2025160017-A1
Application number	US-202418805269-A
Country	US
Kind code	A1
Filing date	Aug 14, 2024
Priority date	Nov 14, 2023
Publication date	May 15, 2025
Grant date	—

Abstract

Provided are an image sensor including a spectral filter and an electronic apparatus. An image sensor includes a sensor substrate including a plurality of pixels configured to sense light, and a spectral filter configured to separate incident light into at least four different wavelength bands and to provide the separated incident light to the plurality of pixels. The spectral filter includes a routing filter array including a plurality of nano-structures configured to color-separate the incident light into at least three different wavelength bands and to condense the light onto the plurality of pixels, and a spectral filter array between the sensor substrate and the routing filter array, and including a plurality of unit filters having different transmission spectrums, the plurality of unit filters respectively corresponding to the plurality of pixels.

First claim

What is claimed is:

1 . An image sensor, comprising:
a sensor substrate comprising a plurality of pixels configured to sense light; and a spectral filter configured to separate incident light into at least four different wavelength bands and to provide the separated incident light to the plurality of pixels, wherein the spectral filter comprises:
a routing filter array comprising a plurality of nano-structures configured to color-separate the incident light into at least three different wavelength bands and to condense the separated incident light onto the plurality of pixels; and
a spectral filter array between the sensor substrate and the routing filter array, and comprising a plurality of unit filters having different transmission spectrums, the plurality of unit filters respectively corresponding to the plurality of pixels.

2 . The image sensor of claim 1 , wherein the routing filter array comprises a first meta-region, a second meta-region, a third meta-region, and a fourth meta-region,
wherein each of the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region correspond to one of the plurality of pixels and to one of the plurality of unit filters, wherein the plurality of nano-structures are disposed in each of the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region, and wherein the plurality of nano-structures are further configured to change a phase of the incident light.

3 . The image sensor of claim 2 , wherein the plurality of nano-structures are further configured to:
condense a first light of incident light onto first pixels corresponding to the first meta-region and the fourth meta-region, the first light having a first wavelength band, the incident light being incident on the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region; condense a second light of the incident light onto a second pixel corresponding to the second meta-region, the second light having a second wavelength band; and condense a third light of the incident light onto a third pixel corresponding to the third meta-region, the third light having a third wavelength band.

4 . The image sensor of claim 2 , wherein the plurality of nano-structures are further configured to:
condense a first light of incident light onto a first pixel corresponding to the first meta-region, the first light having a first wavelength band, the incident light being incident on the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region; condense a second light of the incident light onto a second pixel corresponding to the second meta-region, the second light having a second wavelength band; condense a third light of the incident light onto a third pixel corresponding to the third meta-region, the third light having a third wavelength band; condense a fourth light of the incident light onto a fourth pixel corresponding to the fourth meta-region, the fourth light having a fourth wavelength band.

5 . The image sensor of claim 1 , wherein the routing filter array further comprises a first meta-region, a second meta-region, a third meta-region, and a fourth meta-region,
wherein each of the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region correspond to four pixels arranged in a 2×2 array from among the plurality of pixels and correspond to four unit filters arranged in the 2×2 array from among the plurality of unit filters, and wherein the plurality of nano-structures are disposed in each of the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region, and wherein the plurality of nano-structures are further configured to change a phase of the incident light.

6 . The image sensor of claim 5 , wherein the plurality of nano-structures are further configured to:
condense a first light of incident light onto four first pixels respectively corresponding to the first meta-region and the fourth meta-region, the first light having a first wavelength band, the incident light being incident on the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region; condense a second light of the incident light onto four second pixels corresponding to the second meta-region, the second light having a second wavelength band; and condense a third light of the incident light onto four third pixels corresponding to the third meta-region, the third light having a third wavelength band.

7 . The image sensor of claim 5 , wherein the plurality of nano-structures are further configured to:
condense a first light of incident light onto four first pixels corresponding to the first meta-region, the first light having a first wavelength band, the incident light being incident on the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region; condense a second light of the incident light onto four second pixels corresponding to the second meta-region, the second light having a second wavelength band; condense a third light of the incident light onto four third pixels corresponding to the third meta-region, the third light having a third wavelength band; and condense a fourth light of the incident light onto four fourth pixels corresponding to the fourth meta-region, the fourth light having a fourth wavelength band.

8 . The image sensor of claim 1 , wherein each of the plurality of unit filters comprises:
a first reflector; a second reflector above the first reflector; and a cavity between the first reflector and the second reflector, and wherein each of the plurality of unit filters has a transmission spectrum with at least two different transmission peak wavelengths.

9 . The image sensor of claim 8 , wherein a plurality of cavities of the plurality of unit filters have a same thickness.

10 . The image sensor of claim 8 , wherein the cavity comprises:
a cavity lower layer having a lower dielectric pattern formed by a first dielectric material having a first refractive index and a second dielectric material having a second refractive index that is greater than the first refractive index; and a cavity upper layer having an upper dielectric pattern formed by a third dielectric material having a third refractive index and a fourth dielectric material having a fourth refractive index that is greater than the third refractive index.

11 . The image sensor of claim 10 , wherein a first effective refractive index of the cavity lower layer is determined according to a first volume ratio of a first volume occupied by the first dielectric material to a second volume occupied by the second dielectric material in the cavity lower layer,
wherein a second effective refractive index of the cavity upper layer is determined according to a second volume ratio of a third volume occupied by the third dielectric material to a fourth volume occupied by the fourth dielectric material in the cavity upper layer, and wherein the effective refractive indexes and thicknesses of the cavity lower layer and the cavity upper layer are determined in each of the plurality of unit filters, such that each of the plurality of unit filters has a transmission spectrum having at least two different peak wavelengths.

12 . The image sensor of claim 11 , wherein two or more of a plurality of cavities in the plurality of unit filters have same lower dielectric patterns and same upper dielectric patterns.

13 . The image sensor of claim 11 , wherein a plurality of spectral channels are formed by combinations of the rout

Assignees

• Samsung Electronics Co Ltd
• Samsung Electronics Co Ltd Suwon Si

Inventors

• Roh Younggeun
• Roh Sookyoung
• Kim Hyochul

Classifications

• H04N25/78

  Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters · CPC title

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• G02B5/201 Primary

  in the form of arrays · CPC title

• H10F39/024

  of coatings or optical elements · CPC title

• H10F39/806

  Optical elements or arrangements associated with the image sensors · CPC title