Overhang pattern for advanced oled patterning

Patent metadata

Field	Value
Publication number	US-2025143089-A1
Application number	US-202318690574-A
Country	US
Kind code	A1
Filing date	Dec 13, 2023
Priority date	Dec 13, 2022
Publication date	May 1, 2025
Grant date	—

Abstract

Embodiments described herein relate to a device. The device includes a substrate, overhang structures disposed over the substrate, and a plurality of sub-pixels. Each overhang structure has a second structure disposed over a first structure. The second structure has an overhang extension extending laterally past the first structure. The first structure includes a first sidewall opposing a second sidewall. The first sidewall and the second sidewall are connected to each other. The plurality of sub-pixels each include an organic light-emitting diode (OLED) material, and a cathode disposed over the OLED material. The cathode extends under the overhang extension such that the cathode contacts the first sidewall and the second sidewall of the first structure under the overhang extension.

First claim

What is claimed is:

1 . A device, comprising:
a substrate; overhang structures disposed over the substrate, each overhang structure having an second structure disposed over a first structure, the second structure having an overhang extension extending laterally past the first structure, the first structure comprising:
a first sidewall opposing a second sidewall, the first sidewall and the second sidewall connected to each other; and
a plurality of sub-pixels, each sub-pixel comprising: an organic light-emitting diode (OLED) material; and a cathode disposed over the OLED material and extending under the overhang extension such that the cathode contacts the first sidewall and the second sidewall of the first structure under the overhang extension.

2 . The device of claim 1 , further comprising:
at least two sidewalls connecting a first end of the first sidewall to the first end of the second sidewall; and at least two more sidewalls connecting a second end of the first sidewall to the second end of the second sidewall.

3 . The device of claim 2 , wherein a cathode thickness at a midpoint between a cathode endpoint and an OLED endpoint on the first sidewall and the second sidewall is greater than the cathode thickness on the at least two sidewalls.

4 . The device of claim 3 , wherein a ratio of a thickness of a cathode thickness on the first sidewall and the second sidewall to the thickness of the cathode thickness on the at least two sidewalls is between 1:1 and 10:1.

5 . The device of claim 1 , wherein the plurality of sub-pixels are hexagonal sub-pixels.

6 . The device of claim 1 , wherein each sub-pixel further comprises a via hole disposed through the sub-pixel.

7 . The device of claim 1 , further comprising pixel-defining layer (PDL) structures disposed on the substrate, and wherein the overhang structures are disposed over the PDL structures.

8 . The device of claim 7 , wherein the PDL structures comprise polyimides, silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), silicon oxynitride (Si 2 N 2 O), magnesium fluoride (MgF 2 ), or combinations thereof.

9 . The device of claim 1 , further comprising a pixel isolation structure (PIS) disposed on the substrate, and wherein the overhang structures are disposed over the PIS.

10 . The device of claim 9 , wherein the PIS comprises polyimides, silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), silicon oxynitride (Si 2 N 2 O), magnesium fluoride (MgF 2 ), or combinations thereof.

11 . A device, comprising:
a substrate; overhang structures disposed over the substrate, each overhang structure having an second structure disposed over a first structure, the second structure having an overhang extension extending laterally past the first structure, the first structure comprising:
a first sidewall opposing a second sidewall and at least four angled sidewalls, wherein at least two of the four angled sidewalls connecting a first end of the first sidewall to the first end of the second sidewall and at least two more of the four angled sidewalls connecting a second end of the first sidewall and a second end of the second sidewall; and
a plurality of sub-pixels, each sub-pixel comprising:
an organic light-emitting diode (OLED) material; and
a cathode disposed over the OLED material and extending under the overhang extension such that the cathode contacts the first sidewall, the second sidewall, and the at least four angled sidewalls of the first structure under the overhang extension, wherein a cathode thickness at a midpoint between a cathode endpoint and an OLED endpoint on the first sidewall and the second sidewall is greater than the cathode thickness on the at least four angled sidewalls.

12 . The device of claim 11 , further comprising pixel-defining layer (PDL) structures disposed on the substrate, and wherein the overhang structures are disposed over the PDL structures.

13 . The device of claim 11 , wherein the plurality of sub-pixels are hexagonal sub-pixels, wherein the first sidewall and the second sidewall are normal to a scan direction.

14 . The device of claim 11 , further comprising a pixel isolation structure (PIS) disposed on the substrate, and wherein the overhang structures are disposed over the PIS.

15 . The device of claim 11 , wherein:
a ratio of a thickness of a cathode thickness on the first sidewall and the second sidewall to the thickness of the cathode thickness on the at least four angled sidewalls is between 1:1 and 10:1.

16 . A method of forming a device, comprising:
depositing an OLED material at a first angle, wherein:
overhangs are disposed over a substrate, each overhang structure having an second structure disposed over a first structure, the second structure having an overhang extension extending laterally past the first structure, the first structure comprising:
a first sidewall opposing a second sidewall and at least two sidewalls connecting a first end of the first sidewall to a first end of the second sidewall; and
at least two more sidewalls connecting a second end of the first sidewall to the second end of the second sidewall; and

depositing a cathode at a second angle such that the cathode contacts the first sidewall, the second sidewall, the at least two sidewalls, and the at least two more sidewalls of the first structure under the overhang extension.

17 . The method of claim 16 , wherein the OLED material and the cathode are deposited as the substrate or a deposition source moves in a scan direction.

18 . The method of claim 16 , wherein:
a cathode thickness at a midpoint between a cathode endpoint and an OLED endpoint on the first sidewall and the second sidewall is greater than the cathode thickness on the at least two sidewalls.

19 . The method of claim 16 , wherein:
a ratio of a thickness of a cathode thickness on the first sidewall and the second sidewall to the thickness of the cathode thickness on the at least two sidewalls is between 1:1 and 10:1.

20 . The method of claim 16 , wherein each sub-pixel further comprises:
an anode; and a via hole disposed through the anode.

Assignees

• Applied Materials Inc

Inventors

• Lin Yu-Hsin
• Anjiki Takashi
• Chen Chung-Chia
• Jeong Jae Wook
• Choung Ji Young
• Lee Jungmin

Classifications

• H10K2102/351

  Thickness · CPC title

• H10K2102/301

  Details of OLEDs · CPC title

• H10K71/621

  Providing a shape to conductive layers, e.g. patterning or selective deposition · CPC title

• H10K71/60

  Forming conductive regions or layers, e.g. electrodes · CPC title

• H10K71/10

  Deposition of organic active material · CPC title