Method for generating proximity correction model, method for processing proximity correction using generated proximity correction model and proximity correction system thereof

Patent metadata

Field	Value
Publication number	US-2025117924-A1
Application number	US-202418631579-A
Country	US
Kind code	A1
Filing date	Apr 10, 2024
Priority date	Oct 6, 2023
Publication date	Apr 10, 2025
Grant date	—

Abstract

A method for generating a proximity correction model which is performed by a computing system is provided. The method comprises acquiring a plurality of shot images on a wafer after performing a first process using a first layout, generating an overlap image obtained by overlap of the plurality of shot images, and performing machine learning on the proximity correction model, using an image of the first layout and the overlap image.

First claim

What is claimed is:

1 . A method for generating a proximity correction model which is performed by a computing system, the method comprising:
acquiring a plurality of shot images of a wafer after performing a first process on the wafer using a first layout; generating an overlap image obtained by overlap of the plurality of shot images; and performing machine learning on the proximity correction model by using an image of the first layout and the overlap image.

2 . The method for generating the proximity correction model of claim 1 , wherein
a first area of the overlap image has a first sharpness that indicates a first measurement reliability, a second area of the overlap image has a second sharpness that indicates a second measurement reliability, the first area and the second area are areas that do not overlap each other, and the first sharpness is different from the second sharpness.

3 . The method for generating the proximity correction model of claim 2 , wherein
the first area is a corner area of a pattern included in a FOV (Field of View) of the wafer, the second area is a line area included in the FOV, the first sharpness is lower than the second sharpness, and the first measurement reliability is lower than the second measurement reliability.

4 . The method for generating the proximity correction model of claim 2 , wherein
the first area is a line-end area of a pattern included in a FOV (Field of View) of the wafer, the second area is a line area included in the FOV, the first sharpness is lower than the second sharpness, and the first measurement reliability is lower than the second measurement reliability.

5 . The method for generating the proximity correction model of claim 2 , wherein
the first area is a convex area of a pattern included in a FOV (Field of View) of the wafer, the second area is a line area included in the FOV, the first sharpness is lower than the second sharpness, and the first measurement reliability is lower than the second measurement reliability.

6 . The method for generating the proximity correction model of claim 1 , wherein the proximity correction model is an image-to-image model which is configured to receive an image of the first layout, and to output a predicted image of a pattern formed corresponding to a shape of the first layout after performing the first process.

7 . The method for generating the proximity correction model of claim 1 , wherein the generating the overlap image comprises
extracting contours of each of plurality of shot images, dithering the extracted contours of each of the plurality of shot images, and generating the overlap image by overlapping the dithered contours of each of the plurality of shot images.

8 . The method for generating the proximity correction model of claim 7 , wherein the dithering the extracted contours comprises:
dithering the extracted contours at a same level for each of the plurality of shot images.

9 . The method for generating the proximity correction model of claim 1 , wherein the performing machine learning comprises:
performing the machine learning on the proximity correction model, by further using a representative image, representing the plurality of shot images, as a correct image.

10 . The method for generating the proximity correction model of claim 9 , wherein the representative image is an image representing an average contour of the plurality of shot images.

11 . The method for generating the proximity correction model of claim 9 , wherein the performing the machine learning on the proximity correction model, by further using the representative image representing the plurality of shot images comprises:
updating parameters of the proximity correction model by performing an error back-propagation using loss data, the loss data representing a difference between an image output by the proximity correction model and the representative image.

12 . The method for generating the proximity correction model of claim 11 ,
wherein the loss data comprises pixel loss values in pixel units, and wherein the performing the error back-propagation comprises
using the overlap image to determine weights of each of the pixel loss values, and
performing back-propagation that updates the parameters of the proximity correction model using each pixel loss value reflecting the determined weights.

13 . The method for generating the proximity correction model of claim 12 , wherein the determining the weights of each pixel loss value using the overlap images comprises:
determining the weight using a pixel value of the overlap image for a pixel position corresponding to the pixel loss value.

14 . The method for generating the proximity correction model of claim 13 , wherein the determining the weight using the pixel value of the overlap image comprises:
determining the weight such that the weight increases as the pixel value of the overlap image approaches a value opposite to a pixel value of a background pixel.

15 . The method for generating the proximity correction model of claim 1 , wherein
the first layout is a layout of a photoresist pattern, the first process is an etching process, the plurality of shot images on the wafer are a plurality of images of an etching pattern included in an FOV (Field Of View) area of the wafer, the etching pattern is a pattern formed on the wafer by the etching process, and the method further comprises adjusting the layout of the photoresist pattern by performing a PPC (Process Proximity Correction) process, the PPC process using a difference between an output image of the proximity correction model and an ACI (After Cleaning Inspection) target image.

16 . The method for generating the proximity correction model of claim 1 , wherein
the first layout is a mask layout, the first process is a photolithography process, the plurality of shot images of the wafer are a plurality of images of a photoresist pattern included in an FOV (Field Of View) area of the wafer, the photoresist pattern is a pattern developed on the wafer by the photolithography process, and the method further comprises adjusting the layout of the photoresist pattern by performing an OPC (Optical Proximity Correction) process, the OPC process using a difference between an output image of the proximity correction model and an ADI (After Develop Inspection) target image.

17 . A proximity correction method of a manufacturing process which is performed by a computing system, the method comprising:
inputting, to a machine-learned proximity correction model, image data of a first layout; generating, using output data of the proximity correction model, a predicted image of a pattern formed after performing a first process using the first layout; and performing a proximity correction process based on a difference between the predicted image and a target image, wherein the proximity correction model is machine-learned using an overlap image obtained by overlapping a plurality of shot images of a wafer after performing the first process on the wafer.

18 . The proximity correction method of the manufacturing process of claim 17 , wherein
the proximity correction model is generated through an error back-propagation using a weighted result of loss data indicating a difference between a correct image and an image output by the proximity correction model, the correct image including a measured result of a pattern formed as a result of performing the first process using the first layout, and t

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yeo Sang Chul
• Yang Jae Won

Classifications

• G03F1/36

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title

• G06N3/0475

  Generative networks · CPC title

• G06N3/084

  Backpropagation, e.g. using gradient descent · CPC title

• G03F7/70441

  Optical proximity correction [OPC] · CPC title

• G03F7/705 Primary

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title