Light-emitting device, method for manufacturing the same, and cellular phone

Patent metadata

Field	Value
Publication number	US-2025113711-A1
Application number	US-202418978174-A
Country	US
Kind code	A1
Filing date	Dec 12, 2024
Priority date	Nov 18, 2008
Publication date	Apr 3, 2025
Grant date	—

Abstract

The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.

First claim

1 . (canceled)

2 . A light-emitting device comprising:
an EL panel, the EL panel comprising:
a light-emitting element over a flexible substrate; and
a transistor over the flexible substrate, a first electrode of the transistor being electrically connected to a first electrode of the light-emitting element,
wherein the EL panel comprises:
a first side and a second side in a short-side direction of the EL panel;
a planar region on a front surface side of the light-emitting device; and
a first curved region provided between the second side and the planar region,
wherein the first curved region is provided at a first end portion in a longitudinal direction of the light-emitting device, wherein the second side is provided on a back surface side of the EL panel, and wherein the EL panel does not have a second curved region between the first side and the planar region.

3 . A light-emitting device comprising:
a driver circuit; and an EL panel, the EL panel comprising:
a light-emitting element over a flexible substrate; and
a transistor over the flexible substrate, a first electrode of the transistor being electrically connected to a first electrode of the light-emitting element,
wherein the EL panel comprises:
a first side and a second side in a short-side direction of the EL panel;
a planar region on a front surface side of the light-emitting device; and
a first curved region provided between the second side and the planar region,
wherein the first curved region is provided at a first end portion in a longitudinal direction of the light-emitting device, wherein the second side is provided on a back surface side of the EL panel, wherein the EL panel does not have a second curved region between the first side and the planar region, wherein the driver circuit is configured to drive a pixel circuit comprising the transistor, and wherein the driver circuit overlaps with the back surface side of the EL panel.

4 . The light-emitting device according to claim 3 , further comprising:
a touch panel provided over the EL panel, wherein the second side overlaps with a portion of the planar region and a portion of the touch panel.

5 . A light-emitting device comprising:
an EL panel, the EL panel comprising:
a light-emitting element over a flexible substrate; and
a transistor over the flexible substrate, the transistor being electrically connected to a first electrode of the light-emitting element,
wherein the EL panel comprises:
a first side and a second side in a short-side direction of the EL panel;
a planar region on a front surface side of the light-emitting device; and
a first curved region provided between the second side and the planar region,
wherein the transistor comprises:
a first semiconductor film over a first film containing silicon oxide, the first film being provided over the flexible substrate;
a gate insulating film over the first semiconductor film;
a gate electrode over the gate insulating film;
a first insulating film over the gate electrode;
a second insulating film over the first insulating film; and
a first electrode and a second electrode over the second insulating film,
wherein the first electrode is in contact with a top surface of the first semiconductor film, wherein the first curved region is provided at a first end portion in a longitudinal direction of the light-emitting device, wherein the second side is provided on a back surface side of the EL panel, and wherein the EL panel does not have a second curved region between the first side and the planar region.

6 . The light-emitting device according to claim 5 ,
wherein one of the first electrode and the second electrode is provided in an opening of the first film.

7 . The light-emitting device according to claim 5 ,
wherein the flexible substrate comprises a resin.

8 . The light-emitting device according to claim 5 ,
wherein the first semiconductor film has an island-shape, and wherein the first semiconductor film comprises indium oxide.

9 . The light-emitting device according to claim 5 ,
wherein the first semiconductor film has an island-shape, wherein the first semiconductor film comprises an oxide semiconductor, wherein the first semiconductor film comprises a channel formation region sandwiched between a source region and a drain region, and wherein an impurity element having conductivity is added to each of the source region and the drain region.

10 . The light-emitting device according to claim 5 ,
wherein the first semiconductor film comprises an oxide semiconductor.

Assignees

• Semiconductor Energy Lab

Inventors

• Hatano Kaoru
• Seo Satoshi
• Yamazaki Shunpei

Classifications

• H10K59/874

  including getter material or desiccant · CPC title

• H10K59/871

  Self-supporting sealing arrangements · CPC title

• H10K2102/311

  Flexible OLED · CPC title

• H10K59/1201

  Manufacture or treatment · CPC title

• H10K77/111

  Flexible substrates · CPC title