Gas barrier film and method for manufacturing gas barrier film

Patent metadata

Field	Value
Publication number	US-2025109266-A1
Application number	US-202318849603-A
Country	US
Kind code	A1
Filing date	Mar 14, 2023
Priority date	Mar 29, 2022
Publication date	Apr 3, 2025
Grant date	—

Abstract

To provide a gas barrier film having a high gas barrier property and a high modulus of surface elasticity and having excellent hygrothermal durability, a gas barrier film having less pinholes in the entire surface and having a high gas barrier property, and manufacturing methods of these. A first gas barrier film includes: a gas barrier layer containing silicon and oxygen, and a region in a thickness direction of the gas barrier layer, the region containing silicon, oxygen, and nitrogen, and having an element ratio of nitrogen of 5 at % or greater, and a thickness dM of the region being 30 nm or greater. A second gas barrier film includes a gas barrier layer containing silicon and oxygen, where, in a case where the gas barrier film having a predetermined size is sectioned into a predetermined number, a proportion of the number of sections having a water vapor transmission rate in a predetermined condition of less than 1.0×10−3 g/m2/day is not less than a predetermined proportion.

First claim

1 . A gas barrier film, comprising:
a gas barrier layer, on a base material film, containing silicon and oxygen as main components, wherein the gas barrier layer has a high nitrogen-content region and a low nitrogen-content region in a thickness direction, the high nitrogen-content region contains silicon, oxygen, and nitrogen, and has an element ratio of nitrogen of 5 at % or greater, the low nitrogen-content region has an element ratio of nitrogen smaller than 5 at %, the high nitrogen-content region has a thickness d M of 38 nm or greater, and the high nitrogen-content region, the low nitrogen-content region, and the base material film are arranged in this order from a surface of the gas barrier layer.

2 . The gas barrier film according to claim 1 , wherein
change in an element ratio of silicon, an element ratio of oxygen, and an element ratio of nitrogen in the thickness direction of the gas barrier layer has a point indicating a maximum value of the element ratio of nitrogen, a point indicating a maximum value of the element ratio of silicon, and a point indicating a minimum value of the element ratio of oxygen, and the maximum value of nitrogen is smaller than the minimum value of oxygen and the maximum value of silicon.

3 . The gas barrier film according to claim 1 , wherein a water vapor transmission rate in an atmosphere at 40° C. and a relative humidity of 90% is less than 6.0×10 −3 g/m 2 /day.

4 . The gas barrier film according to claim 1 , wherein a thickness d G of the gas barrier layer and the thickness d M of the high nitrogen-content region satisfy a relationship 1>d M /d G ≥0.01.

5 . The gas barrier film according to claim 1 , wherein a modulus of surface elasticity of the gas barrier film is 24.5 GPa or greater.

6 - 8 . (canceled)

9 . A method for manufacturing the gas barrier film according to claim 1 , the method comprising:
forming a gas barrier precursor layer on the base material film by using a composition containing a silicon-containing macromolecular compound, and forming the gas barrier layer by modifying the gas barrier precursor layer by subjecting a surface part of the gas barrier precursor layer to plasma irradiation.

10 . A method for manufacturing a gas barrier film containing a gad barrier layer, the method comprising:
forming a gas barrier precursor layer on a base material film by using a composition containing a silicon-containing macromolecular compound, and forming the gas barrier layer by modifying the gas barrier precursor layer by subjecting a surface part of the gas barrier precursor layer to plasma irradiation in the presence of helium gas for 300 seconds or longer, wherein the gas barrier layer contains silicon and oxygen, and the gas barrier layer has a region in a thickness direction, the region containing silicon, oxygen, and nitrogen and having an element ratio of nitrogen of 5 at % or greater and a thickness d M of 30 nm or greater.

11 . The method according to claim 10 , wherein the gas barrier precursor layer is placed on electrodes, and the gas barrier precursor layer is subjected to the plasma irradiation while superimposed direct-current power and alternating-current power is applied to the electrodes.

12 . A method for manufacturing a gas barrier film containing a gad barrier layer, the method comprising:
forming a gas barrier precursor layer on a base material film by using a composition containing a silicon-containing macromolecular compound, and forming the gas barrier layer by modifying the gas barrier precursor layer by subjecting a surface part of the gas barrier precursor layer to plasma irradiation in the presence of helium gas for 700 seconds or longer, wherein the gas barrier layer contains silicon and oxygen, and the gas barrier layer has a region in a thickness direction, the region containing silicon, oxygen, and nitrogen and having an element ratio of nitrogen of 5 at % or greater and a thickness d M of 30 nm or greater.

13 . A method for manufacturing a gas barrier film containing a gas barrier layer, the method comprising:
forming a gas barrier precursor layer on a base material film by using a composition containing a silicon-containing macromolecular compound, and forming the gas barrier layer by modifying the gas barrier precursor layer by subjecting a surface part of the gas barrier precursor layer to plasma irradiation in the presence of helium gas for 300 seconds or longer, wherein the gas barrier layer contains silicon and oxygen, and in a case where the gas barrier film is cut into a square shape that has an area of 50.5 mm×50.5 mm and is sectioned into 64 squares each having an identical shape, a number of sections having a water vapor transmission rate in an atmosphere at 40° C. and a relative humidity of 90% of less than 1.0×10 −3 g/m 2 /day is 95% or greater of a total number of sections of the sectioned square-shaped gas barrier film.

14 . A method for manufacturing a gas barrier film containing a gas barrier layer, the method comprising:
forming a gas barrier precursor layer on a base material film by using a composition containing a silicon-containing macromolecular compound, and forming the gas barrier layer by modifying the gas barrier precursor layer by subjecting a surface part of the gas barrier precursor layer to plasma irradiation in the presence of helium gas for 700 seconds or longer, wherein the gas barrier layer contains silicon and oxygen, and in a case where the gas barrier film is cut into a square shape that has an area of 50.5 mm×50.5 mm and is sectioned into 64 squares each having an identical shape, a number of sections having a water vapor transmission rate in an atmosphere at 40° C. and a relative humidity of 90% of less than 1.0×10 −3 g/m 2 /day is 95% or greater of a total number of sections of the sectioned square-shaped gas barrier film.

Assignees

• Lintec Corp

Inventors

• SHINDO Nana
• Naganawa Satoshi

Classifications

• C08J7/123

  Treatment by wave energy or particle radiation (C08J7/18 takes precedence) · CPC title

• C08J7/0427 Primary

  with only one layer of a composition containing a polymer binder (with more layers C08J7/042) · CPC title

• C08J2367/03

  the dicarboxylic acids and dihydroxy compounds having the hydroxy and the carboxyl groups directly linked to aromatic rings · CPC title

• C08J2483/16

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title

• C08J7/048 Primary

  Forming gas barrier coatings · CPC title