TEMPERATURE SENSING AND COMPUTING DEVICE AND ARRAY BASED ON TaOx ELECTRONIC MEMRISTOR

Patent metadata

Field	Value
Publication number	US-2025107460-A1
Application number	US-202418760041-A
Country	US
Kind code	A1
Filing date	Jul 1, 2024
Priority date	Sep 27, 2023
Publication date	Mar 27, 2025
Grant date	—

Abstract

Disclosed is a temperature sensing and computing device and array based on TaO x electronic memristor, including a first metal layer, a function layer, and a second metal layer sequentially stacked from bottom to top; a work function of a metal material in the first metal layer is higher than a work function of a metal material in the second metal layer; the function layer is TaO x material; the first metal layer is grounded, and positive and negative voltages are applied to the second metal layer; in which an output current when the negative voltage is applied to the second metal layer is greater than an output current when the positive voltage of the same magnitude is applied to the second metal layer, and there is a self-rectifying effect; when the voltage of the same magnitude is applied to the second metal layer, the output current increases as a temperature increases.

First claim

1 . A temperature sensing and computing device based on TaO x electronic memristor, comprising a first metal layer, a function layer, and a second metal layer sequentially stacked from bottom to top, wherein
a work function of a metal material in the first metal layer is higher than a work function of a metal material in the second metal layer, the function layer is made of TaO x material; the first metal layer and the second metal layer serve as electrodes, in response to the first metal layer being configured for grounding and the second metal layer being configured for applying positive and negative voltages, an output current of the negative voltage being applied to the second metal layer is greater than an output current of the positive voltage of same magnitude being applied to the second metal layer, and there is a self-rectifying effect; in response to the voltage of the same magnitude being applied to the second metal layer, the output current increases as a temperature increases, wherein 0<x≤2.5.

2 . The temperature sensing and computing device according to claim 1 . wherein a material of the first metal layer is one of Pt, Pd, Au, Ni, and ITO; a material of the second metal layer is one of Ti, W, Ag, Cu, Al, Ta, Hf, TaN, TiN, and TiW.

3 . The temperature sensing and computing device according to claim 1 . wherein a thickness of the first metal layer is 5 nm to 2 μm, a thickness of the function layer is 2 nm to 500 nm, and a thickness of the second metal layer is 5 nm to 2 μm.

4 . A temperature sensing and computing array based on the temperature sensing and computing TaO x electronic memristor devices according to claim 1 , comprising m first metal layers not intersected with each other and disposed with gaps, function layers, and n second metal layers not intersected with each other and disposed with gaps; wherein the function layer is made of TaO x material; the first metal layer and the second metal layer are arranged crosswise and not intersected with each other; the work function of the metal material in the first metal layer is higher than the work function of the metal material in the second metal layer; wherein
m>1, n>1, and there are m×n temperature sensing and computing devices in the array, wherein 0<x≤2.5.

5 . The temperature sensing and computing array according to claim 4 , wherein a size of the function layer is adapted to a size of an overlapping portion between the first metal layer and the second metal layer.

6 . The temperature sensing and computing array according to claim 4 , wherein a material of the first metal layer is one of Pt, Pd, Au, Ni, and ITO; a material of the second metal layer is one of Ti, W, Ag, Cu, Al, Ta, Hf, TaN, TiN, and TiW.

7 . The temperature sensing and computing array according to claim 4 , wherein a thickness of the first metal layer is 5 nm to 2 μm, a thickness of the function layer is 2 nm to 500 nm, and a thickness of the second metal layer is 5 nm to 2 μm.

Assignees

• Univ Huazhong Science Tech

Inventors

• Cheng Xiaomin
• Cao Lijuan
• Luo Yunhao
• Li Jiaqi
• Miao Xiangshui

Classifications

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10B63/80

  Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays · CPC title

• H10N70/841

  Electrodes · CPC title

• H10N70/861 Primary

  Thermal details · CPC title

• H10N70/24

  based on migration or redistribution of ionic species, e.g. anions, vacancies · CPC title