Electronic memory device having an electrode made of a soluble material
US-9209391-B2 · Dec 8, 2015 · US
Electronic device including proton conductive layer and resistance change channel layer capable of receiving hydrogen
US2025107458A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025107458-A1 |
| Application number | US-202418972831-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 6, 2024 |
| Priority date | Feb 22, 2021 |
| Publication date | Mar 27, 2025 |
| Grant date | — |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
An electronic device includes a substrate, a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate, a channel layer disposed between the source electrode layer and the drain electrode layer over the substrate, a proton conductive layer disposed on the channel layer, and a gate electrode layer disposed on the proton conductive layer.
First claim
Opening claim text (preview).
What is claimed is: 1 . An electronic device comprising: a substrate; a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate; a channel layer disposed between the source electrode layer and the drain electrode layer over the substrate; a proton conductive layer disposed on the channel layer; and a gate electrode layer disposed on the proton conductive layer. 2 . The electronic device of claim 1 , wherein the channel layer includes a metal and wherein the hydrogen is disposed in an interstitial site of a crystal lattice of the metal. 3 . The electronic device of claim 1 , wherein the channel layer includes a metal that forms a metal hydride. 4 . The electronic device of claim 1 , wherein the proton conductive layer includes at least one selected from the group consisting of proton exchange polymer, metal-organic framework (MOF), covalent-organic framework (COF), sulfonated graphene, and polymer-graphene composites. 5 . The electronic device of claim 1 , wherein the proton conductive layer includes hydrogen that can be exchanged with the channel layer. 6 . The electronic device of claim 1 , wherein the channel layer has a hydrogen concentration that varies according to a voltage applied between at least one of the source electrode layer and the drain electrode layer and the gate electrode layer. 7 . The electronic device of claim 1 , wherein the channel layer has an electrical resistance that varies according to the concentration of hydrogen distributed in the channel layer. 8 . The electronic device of claim 1 , further comprising a hydrogen source layer disposed between the proton conductive layer and the gate electrode layer.
Assignees
Inventors
Classifications
- H10N70/245Primary
the species being metal cations, e.g. programmable metallization cells · CPC title
Oxides or nitrides · CPC title
adapted for supplying ionic species · CPC title
- H10N70/253Primary
having three or more electrodes, e.g. transistor-like devices · CPC title
Switching materials · CPC title
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Frequently asked questions
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- What does patent US2025107458A1 cover?
- An electronic device includes a substrate, a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate, a channel layer disposed between the source electrode layer and the drain electrode layer over the substrate, a proton conductive layer disposed on the channel layer, and a gate electrode layer disposed on the proton conductive …
- Who is the assignee on this patent?
- Sk Hynix Inc
- What technology area does this patent fall under?
- Primary CPC classification H10N70/245. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Mar 27 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).