Method and apparatus for producing inorganic powder using chemical vapor synthesis

US2025100050A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2025100050-A1
Application numberUS-202418890420-A
CountryUS
Kind codeA1
Filing dateSep 19, 2024
Priority dateSep 22, 2023
Publication dateMar 27, 2025
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Provided is a method and apparatus for producing inorganic powder using chemical vapor synthesis (CVS), the method and apparatus being capable of increasing a production yield by suppressing side reactions and of increasing continuous process stability by preventing reactor blockage, and the method includes supplying a precursor, supplying a side reaction prevention gas capable of preventing side reactions of the precursor, to the precursor, supplying a reaction gas to the precursor, and forming inorganic powder due to a chemical reaction between the precursor and the reaction gas.

First claim

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What is claimed is: 1 . A method of producing inorganic powder using chemical vapor synthesis (CVS), the method comprising: supplying a precursor; supplying a side reaction prevention gas capable of preventing side reactions of the precursor, to the precursor; supplying a reaction gas to the precursor; and forming inorganic powder due to a chemical reaction between the precursor and the reaction gas. 2 . The method of claim 1 , wherein the side reaction prevention gas suppresses formation of a metal oxide due to a chemical reaction between the precursor and water or oxygen. 3 . The method of claim 2 , wherein water is provided as being chemically or physically adsorbed onto the precursor or combined with the precursor in a form of a hydrate. 4 . The method of claim 1 , wherein the side reaction prevention gas is the same as a portion of products formed due to a chemical reaction between the precursor and water or oxygen. 5 . The method of claim 1 , wherein the side reaction prevention gas suppresses formation of a portion of products formed due to a chemical reaction between the precursor and water or oxygen, thereby suppressing the chemical reaction between the precursor and water or oxygen. 6 . The method of claim 1 , wherein the side reaction prevention gas suppresses or delays formation of the inorganic powder due to a chemical reaction between the precursor and the reaction gas. 7 . The method of claim 1 , wherein the side reaction prevention gas is the same as a portion of products formed due to a chemical reaction between the precursor and the reaction gas. 8 . The method of claim 1 , wherein the side reaction prevention gas suppresses formation of a portion of products formed due to a chemical reaction between the precursor and the reaction gas, thereby suppressing the chemical reaction between the precursor and the reaction gas. 9 . The method of claim 1 , wherein the precursor comprises one or more of elements constituting the side reaction prevention gas. 10 . The method of claim 1 , wherein a non-metallic element of the precursor and a non-metallic element of the side reaction prevention gas are the same substance. 11 . The method of claim 1 , wherein the precursor comprises one or more of a metal chloride, a metal acetate, a metal bromide, a metal carbonate, a metal carbonyl, a metal fluoride, a metal hydroxide, a metal iodide, a metal nitrate, a metal oxide, a metal phosphate, a metal silicate, a metal sulfate, and a metal sulfide. 12 . The method of claim 11 , wherein a metal constituting the precursor comprises one or more of nickel, copper, silver, iron, aluminum, silicon, boron, cobalt, platinum, gold, tin, magnesium, tungsten, niobium, molybdenum, zinc, yttrium, zirconium, ruthenium, iridium, tantalum, and titanium. 13 . The method of claim 1 , wherein the side reaction prevention gas comprises one or more of hydrogen chloride gas (HCl), acetic acid gas (C 2 H 4 O 2 ), hydrogen bromide gas (BrH), carbonic acid gas (H 2 CO 3 ), hydrogen fluoride gas (HF), water vapor (H 2 O), hydrogen iodide gas (HI), nitric acid gas (HNO 3 ), phosphoric acid gas (H 3 PO 4 ), silicon hydride gas (SiH 4 ), hydrogen gas (H 2 ), sulfuric acid gas (H 2 SO 4 ), chlorine gas (Cl 2 ), and hydrogen sulfide gas (H 2 S). 14 . The method of claim 1 , wherein the reaction gas comprises: a reducing gas comprising one or more of hydrogen gas, carbon monoxide gas, magnesium vapor gas, sodium vapor gas, and calcium vapor gas; an oxidizing gas comprising one or more of oxygen gas, water vapor gas, and ozone gas; a nitriding gas comprising one or more of ammonia gas and nitrogen gas; or a carburizing gas comprising one or more of methane gas and acetylene gas. 15 . A method of producing inorganic powder using chemical vapor synthesis (CVS), the method comprising: supplying a precursor; supplying a side reaction prevention gas capable of preventing side reactions of the precursor, to the precursor; supplying a reaction gas to the precursor; and forming metal powder due to a chemical reaction between the precursor and the reaction gas. 16 . The method of claim 15 , wherein the precursor is nickel chloride, wherein the side reaction prevention gas is hydrogen chloride gas, wherein the reaction gas is hydrogen gas, wherein the metal powder is nickel powder, and wherein the hydrogen chloride gas suppresses formation of nickel oxide formed due to a chemical reaction between the precursor and water. 17 . The method of claim 16 , wherein a relationship between a partial pressure of the hydrogen chloride gas and a partial pressure of water satisfies a range of: P H2O /P HCl 2 ≤10 6 , and wherein a relationship between the partial pressure of the hydrogen chloride gas and a partial pressure of the hydrogen gas satisfies a range of: 10 −18 ≤P H2 /P HCl 2 . 18 . The method of claim 15 , wherein the precursor is copper chloride, wherein the side reaction prevention gas is hydrogen chloride gas, wherein the reaction gas is hydrogen gas, wherein the metal powder is copper powder, and wherein the hydrogen chloride gas suppresses formation of copper oxide formed due to a chemical reaction between the precursor and water. 19 . The method of claim 18 , wherein a relationship between a partial pressure of the hydrogen chloride gas and a partial pressure of water satisfies a range of: P H2O /P HCl 2 ≤10 15 , and wherein a relationship between the partial pressure of the hydrogen chloride gas and a partial pressure of the hydrogen gas satisfies a range of: 10 −30 ≤P H2 /P HCl 2 . 20 . A method of producing inorganic powder using chemical vapor synthesis (CVS), the method comprising: supplying a precursor; supplying a side reaction prevention gas capable of preventing side reactions of the precursor, to the precursor; supplying a reaction gas to the precursor; and forming ceramic powder due to a chemical reaction between the precursor and the reaction gas.

Assignees

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Classifications

  • Nickel- or cobalt-based alloys · CPC title

  • B22F9/28Primary

    starting from gaseous metal compounds · CPC title

  • Oxides; Hydroxides · CPC title

  • Oxides · CPC title

  • Thermal decomposition of hydrated chlorides, e.g. of aluminium trichloride hexahydrate · CPC title

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What does patent US2025100050A1 cover?
Provided is a method and apparatus for producing inorganic powder using chemical vapor synthesis (CVS), the method and apparatus being capable of increasing a production yield by suppressing side reactions and of increasing continuous process stability by preventing reactor blockage, and the method includes supplying a precursor, supplying a side reaction prevention gas capable of preventing si…
Who is the assignee on this patent?
Korea Inst Ind Tech
What technology area does this patent fall under?
Primary CPC classification B22F9/28. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Thu Mar 27 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).