Process for producing an organic-inorganic hybrid perovskite layer of controlled composition

Patent metadata

Field	Value
Publication number	US-2025089555-A1
Application number	US-202418826714-A
Country	US
Kind code	A1
Filing date	Sep 6, 2024
Priority date	Sep 12, 2023
Publication date	Mar 13, 2025
Grant date	—

Abstract

A process for producing an organic-inorganic perovskite layer including the following steps: Forming of a layer of inorganic precursors on a substrate, Implementation of a step of close space sublimation from a powder including the organic precursors, whereby the vapors from the layer of organic precursors react with the layer of inorganic precursors and a hybrid organic-inorganic perovskite layer is formed, the powder of organic precursors being obtained by mechanosynthesis by co-grinding at least a first group of particles of a first material and a second group of particles of a second material to form a third group of particles of a third material, the third group of particles forming the powder of organic precursors.

First claim

1 . Process for producing an organic-inorganic perovskite layer comprising the following steps:
Forming of a layer of inorganic precursors on a substrate, Implementation of a close space sublimation step from an powder of organic precursors, whereby the vapors of the powder of organic precursors react with the layer of inorganic precursors and a hybrid organic-inorganic perovskite layer is formed, wherein the powder of organic precursors is obtained by mechanosynthesis by co-grinding at least a first group of particles of a first material and a second group of particles of a second material, until forming a third group of particles of a third material, the third group of particles forming the powder of organic precursors.

2 . Process according to claim 1 , wherein the hybrid organic-inorganic perovskite has formula A′ 1-x ABX x3 with:
A′ an inorganic cation or an alloy of inorganic cations, selected from among Cs, Rb, K, and Na,
A a monovalent organic cation or an alloy of monovalent organic cations, preferably selected from among methylammonium, formamidinium, guanidinium, dimethylammonium, and imidazolium, even more preferably A corresponds to MA and/or FA,
B an inorganic cation or an alloy of inorganic cations selected from among Pb, Sn, and Ge,
X one or a plurality of halogens selected from among Cl, Br, I, and F.

3 . Process according to claim 1 , wherein the powder of organic precursors comprises particles of formula AX with A representing a monovalent organic cation or an alloy of monovalent organic cations, preferably MA and/or FA, X representing one or a plurality of halogens selected from among Cl, Br, I, and F and wherein A represents an alloy of monovalent organic cations and/or X represents a plurality of halogens.

4 . Process according to claim 1 , wherein the hybrid organic-inorganic perovskite has formula Cs 1-x MA x Pb(I 1-y Br y ) 3 , Cs 1-x FA x Pb(I 1-y-z Br y Cl z ) 3 , Cs 1-x FA x Pb(I 1-y Br y ) 3 , Cs 1-x FA x Pb 0.5 Sn 0.5 (I 1-y Br y ) 3 , Cs 1-x-z MA x FA z Pb(I 1-y Br y ) 3 or Cs 1-x-z MA x FA z Pb 1-k Sn k (I 1-y Br y ) 3 with 0≤y≤1, 0≤k≤1, 0≤x≤1, 0≤z≤1, and 0≤x+z≤1.

5 . Process according to claim 1 , wherein the layer comprising the inorganic precursors is a layer containing Pb, Cs, and one or a plurality of halogens selected from among iodine, bromine, and chlorine.

6 . Process according to claim 1 , wherein the powder of organic precursors is a FA(I 1-y Br y ) powder or a MA(I 1-y Br y ) powder with 0<y<1.

7 . Process according to claim 1 , wherein the powder of organic precursors is in the form of an integral target or of a bed of powders.

8 . Process according to claim 1 , wherein layer of inorganic precursors is formed by thermal evaporation or spin coating.

9 . Process according to claim 1 , wherein the layer of inorganic precursors is formed by close space sublimation.

10 . Process according to claim 1 , wherein the substrate is a glass, plastic, metal, or silicon substrate, preferably a textured silicon substrate.

11 . Method of manufacturing a single-junction perovskite photovoltaic cell or a multi-junction photovoltaic cell comprising at least one perovskite photovoltaic cell, for example a perovskite-silicon tandem photovoltaic cell, a perovskite-perovskite tandem photovoltaic cell, a perovskite-perovskite-silicon triple junction photovoltaic cell, or a perovskite-perovskite-perovskite triple junction photovoltaic cell, the process comprising the production of an organic-inorganic perovskite layer according to the process according to claim 1 .

Assignees

• Commissariat Energie Atomique

Inventors

• Grenet Louis
• Testard Elodie
• Roux Frédéric

Classifications

• H10K30/10

  comprising heterojunctions between organic semiconductors and inorganic semiconductors · CPC title

• H10K30/40

  comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers · CPC title

• H10K71/10

  Deposition of organic active material · CPC title

• H10K30/57

  comprising multiple junctions, e.g. tandem PV cells · CPC title

• H10K30/50

  Photovoltaic [PV] devices · CPC title