Dielectric body, capacitor, electric circuit, circuit board, and device
US-2024038452-A1 · Feb 1, 2024 · US
US2025087426A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025087426-A1 |
| Application number | US-202418960931-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 26, 2024 |
| Priority date | Jun 1, 2022 |
| Publication date | Mar 13, 2025 |
| Grant date | — |
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A capacitor includes a metallic tantalum, an electric conductor, and an oxidized tantalum film. The oxidized tantalum film is disposed between the metallic tantalum and the electric conductor, where the oxidized tantalum film is in contact with the metallic tantalum. The oxidized tantalum film includes a first portion containing fluorine, and a second portion. The second portion is located closer to the metallic tantalum than the first portion in a thickness direction of the oxidized tantalum film. And a fluorine concentration at the second portion is lower than a fluorine concentration at the first portion.
Opening claim text (preview).
What is claimed is: 1 . A capacitor comprising: metallic tantalum; an electric conductor; and an oxidized tantalum film disposed between the metallic tantalum and the electric conductor, the oxidized tantalum film being in contact with the metallic tantalum, wherein the oxidized tantalum film includes a first portion containing fluorine and a second portion located closer to the metallic tantalum than the first portion in a thickness direction of the oxidized tantalum film, and a fluorine concentration at the second portion is lower than a fluorine concentration at the first portion. 2 . The capacitor according to claim 1 , wherein the first portion is amorphous. 3 . The capacitor according to claim 1 , wherein the first portion has a composition represented by TaO x F y , and the composition satisfies a requirement 0<x<2.5. 4 . The capacitor according to claim 3 , wherein the composition further satisfies a requirement y≥0.015. 5 . The capacitor according to claim 4 , wherein the composition further satisfies a requirement y≤0.40. 6 . The capacitor according to claim 1 , wherein the fluorine concentration at the second portion is 0.4% or less on the basis of the number of atoms. 7 . The capacitor according to claim 1 , wherein the second portion has a thickness of more than 5 nm and not more than 100 nm. 8 . The capacitor according to claim 1 , further comprising an electrolyte disposed between the oxidized tantalum film and the electric conductor. 9 . An electric circuit comprising the capacitor according to claim 1 . 10 . A circuit board comprising the capacitor according to claim 1 . 11 . An apparatus comprising the capacitor according to claim 1 . 12 . A method for manufacturing a capacitor, the method comprising: anodizing metallic tantalum in contact with a fluorine-free aqueous solution to form a tantalum oxide layer on the metallic tantalum; and anodizing the tantalum oxide layer in contact with a fluorine-containing aqueous solution to form a fluorine-containing oxidized tantalum film on a surface region of the tantalum oxide layer.
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