Memory device and formation method thereof
US-12451175-B2 · Oct 21, 2025 · US
Spin orbit torque magnetoresistive random access memory
US2025081857A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025081857-A1 |
| Application number | US-202318510686-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 16, 2023 |
| Priority date | Aug 31, 2023 |
| Publication date | Mar 6, 2025 |
| Grant date | — |
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Abstract
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A spin orbit torque magnetoresistive random access memory (SOT MRAM) includes at least a spin current source alloy layer, a ferromagnetic free layer, and an insulation layer. The spin current source alloy layer is a nickel-tungsten alloy layer. The ferromagnetic free layer is located on the spin current source alloy layer. The insulation layer is located on the ferromagnetic free layer. Since the nickel-tungsten alloy layer has favorable perpendicular magnetic anisotropic and can maintain a high spin Hall angle, it is suitable as a spin current source for the SOT MRAM.
First claim
Opening claim text (preview).
What is claimed is: 1 . A spin orbit torque magnetoresistive random access memory, comprising: a spin current source alloy layer, wherein the spin current source alloy layer is a nickel-tungsten alloy layer; a ferromagnetic free layer, located on the spin current source alloy layer; and an insulation layer, located on the ferromagnetic free layer. 2 . The spin orbit torque magnetoresistive random access memory according to claim 1 , wherein the nickel-tungsten alloy layer is in direct contact with the ferromagnetic free layer. 3 . The spin orbit torque magnetoresistive random access memory according to claim 1 , wherein the nickel-tungsten alloy layer contains 30 at % or more of tungsten. 4 . The spin orbit torque magnetoresistive random access memory according to claim 1 , wherein the nickel-tungsten alloy layer contains less than 90 at % or less of tungsten. 5 . The spin orbit torque magnetoresistive random access memory according to claim 1 , wherein the nickel-tungsten alloy layer has a plurality of regions with different polarities. 6 . The spin orbit torque magnetoresistive random access memory according to claim 5 , wherein shapes of the plurality of regions comprise block shapes, linear shapes, or a combination thereof. 7 . The spin orbit torque magnetoresistive random access memory according to claim 5 , wherein each of the plurality of regions has a different composition ratio of nickel and tungsten. 8 . The spin orbit torque magnetoresistive random access memory according to claim 1 , wherein the nickel-tungsten alloy layer is a multi-layer film structure, the multi-layer film structure consists of a plurality of sub-layers, and a switching behavior of the ferromagnetic free layer is controlled by controlling a different composition ratio of nickel and tungsten in each of the sub-layers. 9 . The spin orbit torque magnetoresistive random access memory according to claim 8 , wherein a number of film layers in the multi-layer film structure is 2 to 10 layers.
Assignees
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Classifications
Constructional details · CPC title
Magnetoresistive devices · CPC title
Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title
- H10N50/85Primary
Materials of the active region · CPC title
Alloys based on nickel or cobalt · CPC title
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- What does patent US2025081857A1 cover?
- A spin orbit torque magnetoresistive random access memory (SOT MRAM) includes at least a spin current source alloy layer, a ferromagnetic free layer, and an insulation layer. The spin current source alloy layer is a nickel-tungsten alloy layer. The ferromagnetic free layer is located on the spin current source alloy layer. The insulation layer is located on the ferromagnetic free layer. Since t…
- Who is the assignee on this patent?
- Univ Nat Tsing Hua
- What technology area does this patent fall under?
- Primary CPC classification H10N50/85. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Mar 06 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).